KR101085279B1 - 반도체 장치용 αｒｃ층 - Google Patents

반도체 장치용 αｒｃ층 Download PDF

Info

Publication number
KR101085279B1
KR101085279B1 KR1020057013929A KR20057013929A KR101085279B1 KR 101085279 B1 KR101085279 B1 KR 101085279B1 KR 1020057013929 A KR1020057013929 A KR 1020057013929A KR 20057013929 A KR20057013929 A KR 20057013929A KR 101085279 B1 KR101085279 B1 KR 101085279B1
Authority
KR
South Korea
Prior art keywords
silicon
layer
ratio
delete delete
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057013929A
Other languages
English (en)
Korean (ko)
Other versions
KR20050096957A (ko
Inventor
올루분미 오. 아데투투
도날드 오. 아루구
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20050096957A publication Critical patent/KR20050096957A/ko
Application granted granted Critical
Publication of KR101085279B1 publication Critical patent/KR101085279B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020057013929A 2003-01-29 2004-01-23 반도체 장치용 αｒｃ층 Expired - Fee Related KR101085279B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/353,886 2003-01-29
US10/353,886 US6908852B2 (en) 2003-01-29 2003-01-29 Method of forming an arc layer for a semiconductor device
PCT/US2004/001924 WO2004070471A2 (en) 2003-01-29 2004-01-23 Arc layer for semiconductor device

Publications (2)

Publication Number Publication Date
KR20050096957A KR20050096957A (ko) 2005-10-06
KR101085279B1 true KR101085279B1 (ko) 2011-11-22

Family

ID=32736279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057013929A Expired - Fee Related KR101085279B1 (ko) 2003-01-29 2004-01-23 반도체 장치용 αｒｃ층

Country Status (6)

Country Link
US (1) US6908852B2 (enExample)
JP (1) JP4712686B2 (enExample)
KR (1) KR101085279B1 (enExample)
CN (1) CN100481418C (enExample)
TW (1) TW200508805A (enExample)
WO (1) WO2004070471A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4186725B2 (ja) * 2003-06-24 2008-11-26 トヨタ自動車株式会社 光電変換素子
US7271464B2 (en) * 2004-08-24 2007-09-18 Micron Technology, Inc. Liner for shallow trench isolation
US7202164B2 (en) 2004-11-19 2007-04-10 Chartered Semiconductor Manufacturing Ltd. Method of forming ultra thin silicon oxynitride for gate dielectric applications
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US20080299775A1 (en) * 2007-06-04 2008-12-04 Applied Materials, Inc. Gapfill extension of hdp-cvd integrated process modulation sio2 process
US7867921B2 (en) * 2007-09-07 2011-01-11 Applied Materials, Inc. Reduction of etch-rate drift in HDP processes
US7745350B2 (en) * 2007-09-07 2010-06-29 Applied Materials, Inc. Impurity control in HDP-CVD DEP/ETCH/DEP processes
US7972968B2 (en) * 2008-08-18 2011-07-05 Applied Materials, Inc. High density plasma gapfill deposition-etch-deposition process etchant
JP5155070B2 (ja) * 2008-09-02 2013-02-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US20110151222A1 (en) * 2009-12-22 2011-06-23 Agc Flat Glass North America, Inc. Anti-reflective coatings and methods of making the same
CN102810504A (zh) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 厚铝生长工艺方法
US8497211B2 (en) 2011-06-24 2013-07-30 Applied Materials, Inc. Integrated process modulation for PSG gapfill
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5378659A (en) * 1993-07-06 1995-01-03 Motorola Inc. Method and structure for forming an integrated circuit pattern on a semiconductor substrate
JP3326663B2 (ja) * 1994-04-05 2002-09-24 ソニー株式会社 半導体装置の製造方法
US5918147A (en) * 1995-03-29 1999-06-29 Motorola, Inc. Process for forming a semiconductor device with an antireflective layer
US6004850A (en) * 1998-02-23 1999-12-21 Motorola Inc. Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation
US6100559A (en) * 1998-08-14 2000-08-08 Advanced Micro Devices, Inc. Multipurpose graded silicon oxynitride cap layer
US6316349B1 (en) * 1998-11-12 2001-11-13 Hyundai Electronics Industries Co., Ltd. Method for forming contacts of semiconductor devices

Also Published As

Publication number Publication date
US20040145029A1 (en) 2004-07-29
JP2006516823A (ja) 2006-07-06
CN1765019A (zh) 2006-04-26
WO2004070471A2 (en) 2004-08-19
WO2004070471A3 (en) 2005-11-03
CN100481418C (zh) 2009-04-22
US6908852B2 (en) 2005-06-21
KR20050096957A (ko) 2005-10-06
TW200508805A (en) 2005-03-01
JP4712686B2 (ja) 2011-06-29

Similar Documents

Publication Publication Date Title
US6962876B2 (en) Method for forming a low-k dielectric layer for a semiconductor device
US6596636B2 (en) ALD method to improve surface coverage
US11508583B2 (en) Selective high-k formation in gate-last process
CN1839465B (zh) 掩蔽法
KR101085279B1 (ko) 반도체 장치용 αｒｃ층
US6372643B1 (en) Method for forming a selective contact and local interconnect in situ and semiconductor devices carrying the same
KR100724568B1 (ko) 반도체 메모리 소자 및 그 제조방법
US6461960B2 (en) Method of manufacturing a semiconductor device
KR100655691B1 (ko) 커패시터 및 이의 제조 방법.
US20060024959A1 (en) Thin tungsten silicide layer deposition and gate metal integration
US6515350B1 (en) Protective conformal silicon nitride films and spacers
US7217647B2 (en) Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern
US6693042B1 (en) Method for etching a dielectric layer formed upon a barrier layer
US6274472B1 (en) Tungsten interconnect method
US6326321B1 (en) Methods of forming a layer of silicon nitride in semiconductor fabrication processes
CN109786254B (zh) 后栅极工艺中的选择性高k形成
KR100995829B1 (ko) 반도체 소자 및 그의 제조방법
US7858518B2 (en) Method for forming a selective contact and local interconnect in situ
US20010016416A1 (en) Method for fabricating contact plug
US7157792B1 (en) Forming a substantially planar upper surface at the outer edge of a semiconductor topography
US7482239B2 (en) Methods of forming integrated circuitry
JPH08130248A (ja) 膜の形成方法及び半導体装置の製造方法
US20030219961A1 (en) Method to reduce reflectivity of polysilicon layer
KR100342399B1 (ko) 반도체소자의 제조방법
US7217660B1 (en) Method for manufacturing a semiconductor component that inhibits formation of wormholes

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20141028

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20151027

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20181115

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20181115