CN100481418C - 用于半导体器件的抗反射涂层及其制造方法 - Google Patents

用于半导体器件的抗反射涂层及其制造方法 Download PDF

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Publication number
CN100481418C
CN100481418C CNB2004800031339A CN200480003133A CN100481418C CN 100481418 C CN100481418 C CN 100481418C CN B2004800031339 A CNB2004800031339 A CN B2004800031339A CN 200480003133 A CN200480003133 A CN 200480003133A CN 100481418 C CN100481418 C CN 100481418C
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CN
China
Prior art keywords
silicon
ratio
arc layer
nitrogen
percentage
Prior art date
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Expired - Fee Related
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CNB2004800031339A
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English (en)
Chinese (zh)
Other versions
CN1765019A (zh
Inventor
奥卢邦米·O·阿德图图
唐纳·O·阿鲁古
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1765019A publication Critical patent/CN1765019A/zh
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Publication of CN100481418C publication Critical patent/CN100481418C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB2004800031339A 2003-01-29 2004-01-23 用于半导体器件的抗反射涂层及其制造方法 Expired - Fee Related CN100481418C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/353,886 2003-01-29
US10/353,886 US6908852B2 (en) 2003-01-29 2003-01-29 Method of forming an arc layer for a semiconductor device

Publications (2)

Publication Number Publication Date
CN1765019A CN1765019A (zh) 2006-04-26
CN100481418C true CN100481418C (zh) 2009-04-22

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ID=32736279

Family Applications (1)

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CNB2004800031339A Expired - Fee Related CN100481418C (zh) 2003-01-29 2004-01-23 用于半导体器件的抗反射涂层及其制造方法

Country Status (6)

Country Link
US (1) US6908852B2 (enExample)
JP (1) JP4712686B2 (enExample)
KR (1) KR101085279B1 (enExample)
CN (1) CN100481418C (enExample)
TW (1) TW200508805A (enExample)
WO (1) WO2004070471A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4186725B2 (ja) * 2003-06-24 2008-11-26 トヨタ自動車株式会社 光電変換素子
US7271464B2 (en) * 2004-08-24 2007-09-18 Micron Technology, Inc. Liner for shallow trench isolation
US7202164B2 (en) 2004-11-19 2007-04-10 Chartered Semiconductor Manufacturing Ltd. Method of forming ultra thin silicon oxynitride for gate dielectric applications
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US20080299775A1 (en) * 2007-06-04 2008-12-04 Applied Materials, Inc. Gapfill extension of hdp-cvd integrated process modulation sio2 process
US7867921B2 (en) * 2007-09-07 2011-01-11 Applied Materials, Inc. Reduction of etch-rate drift in HDP processes
US7745350B2 (en) * 2007-09-07 2010-06-29 Applied Materials, Inc. Impurity control in HDP-CVD DEP/ETCH/DEP processes
US7972968B2 (en) * 2008-08-18 2011-07-05 Applied Materials, Inc. High density plasma gapfill deposition-etch-deposition process etchant
JP5155070B2 (ja) * 2008-09-02 2013-02-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US20110151222A1 (en) * 2009-12-22 2011-06-23 Agc Flat Glass North America, Inc. Anti-reflective coatings and methods of making the same
CN102810504A (zh) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 厚铝生长工艺方法
US8497211B2 (en) 2011-06-24 2013-07-30 Applied Materials, Inc. Integrated process modulation for PSG gapfill
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5918147A (en) * 1995-03-29 1999-06-29 Motorola, Inc. Process for forming a semiconductor device with an antireflective layer
US6100559A (en) * 1998-08-14 2000-08-08 Advanced Micro Devices, Inc. Multipurpose graded silicon oxynitride cap layer
US6294820B1 (en) * 1998-02-23 2001-09-25 Motorola, Inc. Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5378659A (en) * 1993-07-06 1995-01-03 Motorola Inc. Method and structure for forming an integrated circuit pattern on a semiconductor substrate
JP3326663B2 (ja) * 1994-04-05 2002-09-24 ソニー株式会社 半導体装置の製造方法
US6316349B1 (en) * 1998-11-12 2001-11-13 Hyundai Electronics Industries Co., Ltd. Method for forming contacts of semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5918147A (en) * 1995-03-29 1999-06-29 Motorola, Inc. Process for forming a semiconductor device with an antireflective layer
US6294820B1 (en) * 1998-02-23 2001-09-25 Motorola, Inc. Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer
US6100559A (en) * 1998-08-14 2000-08-08 Advanced Micro Devices, Inc. Multipurpose graded silicon oxynitride cap layer

Also Published As

Publication number Publication date
TW200508805A (en) 2005-03-01
US6908852B2 (en) 2005-06-21
CN1765019A (zh) 2006-04-26
JP2006516823A (ja) 2006-07-06
WO2004070471A3 (en) 2005-11-03
JP4712686B2 (ja) 2011-06-29
KR101085279B1 (ko) 2011-11-22
WO2004070471A2 (en) 2004-08-19
KR20050096957A (ko) 2005-10-06
US20040145029A1 (en) 2004-07-29

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C06 Publication
PB01 Publication
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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090422

Termination date: 20190123