JP2009533844A5 - - Google Patents

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Publication number
JP2009533844A5
JP2009533844A5 JP2009504308A JP2009504308A JP2009533844A5 JP 2009533844 A5 JP2009533844 A5 JP 2009533844A5 JP 2009504308 A JP2009504308 A JP 2009504308A JP 2009504308 A JP2009504308 A JP 2009504308A JP 2009533844 A5 JP2009533844 A5 JP 2009533844A5
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Japan
Prior art keywords
processing chamber
substrate
forming
chamber
epitaxial layer
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JP2009504308A
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English (en)
Japanese (ja)
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JP5317956B2 (ja
JP2009533844A (ja
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Priority claimed from PCT/US2007/008549 external-priority patent/WO2007117583A2/en
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Publication of JP2009533844A5 publication Critical patent/JP2009533844A5/ja
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JP2009504308A 2006-04-07 2007-04-06 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール Active JP5317956B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79006606P 2006-04-07 2006-04-07
US60/790,066 2006-04-07
PCT/US2007/008549 WO2007117583A2 (en) 2006-04-07 2007-04-06 Cluster tool for epitaxial film formation

Related Child Applications (1)

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JP2012243584A Division JP5661083B2 (ja) 2006-04-07 2012-11-05 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール

Publications (3)

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JP2009533844A JP2009533844A (ja) 2009-09-17
JP2009533844A5 true JP2009533844A5 (enExample) 2010-05-06
JP5317956B2 JP5317956B2 (ja) 2013-10-16

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JP2009504308A Active JP5317956B2 (ja) 2006-04-07 2007-04-06 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール
JP2012243584A Active JP5661083B2 (ja) 2006-04-07 2012-11-05 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール

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Country Status (6)

Country Link
US (2) US20070286956A1 (enExample)
JP (2) JP5317956B2 (enExample)
KR (1) KR101074186B1 (enExample)
CN (1) CN101415865B (enExample)
TW (1) TWI446409B (enExample)
WO (1) WO2007117583A2 (enExample)

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CN107574476A (zh) 2013-08-09 2018-01-12 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
CN108369894B (zh) 2015-12-04 2019-10-15 应用材料公司 用于清洁ingaas(或iii-v族)基板的方法和解决方案
KR101960763B1 (ko) * 2016-11-03 2019-03-21 주식회사 유진테크 저온 에피택셜층 형성방법
US20180230624A1 (en) 2017-02-10 2018-08-16 Applied Materials, Inc. Method and apparatus for low temperature selective epitaxy in a deep trench
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US11081358B2 (en) * 2018-07-05 2021-08-03 Applied Materials, Inc. Silicide film nucleation
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