JP2009533844A5 - - Google Patents

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Publication number
JP2009533844A5
JP2009533844A5 JP2009504308A JP2009504308A JP2009533844A5 JP 2009533844 A5 JP2009533844 A5 JP 2009533844A5 JP 2009504308 A JP2009504308 A JP 2009504308A JP 2009504308 A JP2009504308 A JP 2009504308A JP 2009533844 A5 JP2009533844 A5 JP 2009533844A5
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Japan
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processing chamber
substrate
forming
chamber
epitaxial layer
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JP2009504308A
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Japanese (ja)
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JP5317956B2 (ja
JP2009533844A (ja
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Priority claimed from PCT/US2007/008549 external-priority patent/WO2007117583A2/en
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JP2009504308A 2006-04-07 2007-04-06 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール Active JP5317956B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79006606P 2006-04-07 2006-04-07
US60/790,066 2006-04-07
PCT/US2007/008549 WO2007117583A2 (en) 2006-04-07 2007-04-06 Cluster tool for epitaxial film formation

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JP2012243584A Division JP5661083B2 (ja) 2006-04-07 2012-11-05 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール

Publications (3)

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JP2009533844A JP2009533844A (ja) 2009-09-17
JP2009533844A5 true JP2009533844A5 (enExample) 2010-05-06
JP5317956B2 JP5317956B2 (ja) 2013-10-16

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JP2009504308A Active JP5317956B2 (ja) 2006-04-07 2007-04-06 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール
JP2012243584A Active JP5661083B2 (ja) 2006-04-07 2012-11-05 エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール

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Country Status (6)

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US (2) US20070286956A1 (enExample)
JP (2) JP5317956B2 (enExample)
KR (1) KR101074186B1 (enExample)
CN (1) CN101415865B (enExample)
TW (1) TWI446409B (enExample)
WO (1) WO2007117583A2 (enExample)

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KR102705337B1 (ko) 2015-12-04 2024-09-11 어플라이드 머티어리얼스, 인코포레이티드 InGaAs(또는 Ⅲ-Ⅴ) 기판들을 세정하기 위한 방법들 및 해법들
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WO2018148189A1 (en) 2017-02-10 2018-08-16 Applied Materials, Inc. Method and apparatus for low temperature selective epitaxy in a deep trench
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