TWI446409B - 用以形成磊晶膜層的群集工具 - Google Patents

用以形成磊晶膜層的群集工具 Download PDF

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Publication number
TWI446409B
TWI446409B TW096112382A TW96112382A TWI446409B TW I446409 B TWI446409 B TW I446409B TW 096112382 A TW096112382 A TW 096112382A TW 96112382 A TW96112382 A TW 96112382A TW I446409 B TWI446409 B TW I446409B
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TW
Taiwan
Prior art keywords
processing chamber
substrate
epitaxial film
film layer
chamber
Prior art date
Application number
TW096112382A
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English (en)
Chinese (zh)
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TW200802543A (en
Inventor
Arkadii V Samoilov
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200802543A publication Critical patent/TW200802543A/zh
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Publication of TWI446409B publication Critical patent/TWI446409B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
TW096112382A 2006-04-07 2007-04-09 用以形成磊晶膜層的群集工具 TWI446409B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79006606P 2006-04-07 2006-04-07

Publications (2)

Publication Number Publication Date
TW200802543A TW200802543A (en) 2008-01-01
TWI446409B true TWI446409B (zh) 2014-07-21

Family

ID=38581637

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096112382A TWI446409B (zh) 2006-04-07 2007-04-09 用以形成磊晶膜層的群集工具

Country Status (6)

Country Link
US (2) US20070286956A1 (enExample)
JP (2) JP5317956B2 (enExample)
KR (1) KR101074186B1 (enExample)
CN (1) CN101415865B (enExample)
TW (1) TWI446409B (enExample)
WO (1) WO2007117583A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7682940B2 (en) 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
KR101038843B1 (ko) * 2005-10-05 2011-06-03 어플라이드 머티어리얼스, 인코포레이티드 에피택셜막 형성 방법 및 장치
US7598178B2 (en) * 2006-03-24 2009-10-06 Applied Materials, Inc. Carbon precursors for use during silicon epitaxial film formation
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
DE112007001814T5 (de) 2006-07-31 2009-06-04 Applied Materials, Inc., Santa Clara Verfahren zum Bilden kohlenstoffhaltiger Siliziumepitaxieschichten
KR101369355B1 (ko) 2006-07-31 2014-03-04 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 층 형성 동안에 형태를 제어하는 방법
CN102505115B (zh) * 2007-03-02 2014-09-03 欧瑞康太阳能股份公司(特吕巴赫) 真空涂覆装置
US20100096569A1 (en) * 2008-10-21 2010-04-22 Applied Materials, Inc. Ultraviolet-transmitting microwave reflector comprising a micromesh screen
US7964858B2 (en) * 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
CN101760775A (zh) * 2009-04-17 2010-06-30 南安市三晶阳光电力有限公司 一种连续液相外延法制备薄膜的方法和装置
FR2973159B1 (fr) * 2011-03-22 2013-04-19 Soitec Silicon On Insulator Procede de fabrication d'un substrat de base
KR101271247B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
KR101271248B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
KR101271246B1 (ko) * 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
KR101252742B1 (ko) * 2011-08-02 2013-04-09 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
WO2013147481A1 (ko) * 2012-03-28 2013-10-03 국제엘렉트릭코리아 주식회사 선택적 에피택셜 성장을 위한 장치 및 클러스터 설비
WO2015020792A1 (en) 2013-08-09 2015-02-12 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
KR102705337B1 (ko) 2015-12-04 2024-09-11 어플라이드 머티어리얼스, 인코포레이티드 InGaAs(또는 Ⅲ-Ⅴ) 기판들을 세정하기 위한 방법들 및 해법들
KR101960763B1 (ko) * 2016-11-03 2019-03-21 주식회사 유진테크 저온 에피택셜층 형성방법
US20180230624A1 (en) 2017-02-10 2018-08-16 Applied Materials, Inc. Method and apparatus for low temperature selective epitaxy in a deep trench
WO2019046453A1 (en) * 2017-08-30 2019-03-07 Applied Materials, Inc. REMOVAL OF HIGH TEMPERATURE CONTAMINANTS FROM AN INTEGRATED EPITAXIS SYSTEM
CN112106186A (zh) * 2018-07-05 2020-12-18 应用材料公司 硅化物膜成核
US10861722B2 (en) * 2018-11-13 2020-12-08 Applied Materials, Inc. Integrated semiconductor processing
US11605544B2 (en) 2020-09-18 2023-03-14 Applied Materials, Inc. Methods and systems for cleaning high aspect ratio structures

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02225399A (ja) * 1988-11-11 1990-09-07 Fujitsu Ltd エピタキシャル成長方法および成長装置
US5236545A (en) * 1992-10-05 1993-08-17 The Board Of Governors Of Wayne State University Method for heteroepitaxial diamond film development
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
US5495822A (en) * 1993-08-10 1996-03-05 Nippon Telegraph And Telephone Corporation Method of selectively growing Si epitaxial film
JPH08264487A (ja) * 1994-12-14 1996-10-11 Applied Materials Inc リエントリー形状コンタクト・ホールをコーティングまたは埋めるための堆積プロセス
US5637518A (en) * 1995-10-16 1997-06-10 Micron Technology, Inc. Method of making a field effect transistor having an elevated source and an elevated drain
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US5968279A (en) * 1997-06-13 1999-10-19 Mattson Technology, Inc. Method of cleaning wafer substrates
JP3298467B2 (ja) * 1997-07-18 2002-07-02 信越半導体株式会社 エピタキシャルウェーハの製造方法
IT1308606B1 (it) * 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
WO2000063956A1 (en) * 1999-04-20 2000-10-26 Sony Corporation Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device
JP2001156077A (ja) * 1999-11-26 2001-06-08 Nec Corp 半導体装置の製造方法
US20010013313A1 (en) * 2000-02-10 2001-08-16 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the structures
EP1124252A2 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
KR100373853B1 (ko) * 2000-08-11 2003-02-26 삼성전자주식회사 반도체소자의 선택적 에피택시얼 성장 방법
JP2002100762A (ja) * 2000-09-22 2002-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
US6930041B2 (en) * 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
FR2823010B1 (fr) * 2001-04-02 2003-08-15 St Microelectronics Sa Procede de fabrication d'un transistor vertical a grille isolee a quadruple canal de conduction, et circuit integre comportant un tel transistor
US6576535B2 (en) * 2001-04-11 2003-06-10 Texas Instruments Incorporated Carbon doped epitaxial layer for high speed CB-CMOS
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
US20030066486A1 (en) * 2001-08-30 2003-04-10 Applied Materials, Inc. Microwave heat shield for plasma chamber
JP3660897B2 (ja) * 2001-09-03 2005-06-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003096511A (ja) * 2001-09-20 2003-04-03 Nkk Corp 高炉操業方法
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
KR20030035152A (ko) * 2001-10-30 2003-05-09 주식회사 하이닉스반도체 반도체웨이퍼 제조방법
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
US6642151B2 (en) * 2002-03-06 2003-11-04 Applied Materials, Inc Techniques for plasma etching silicon-germanium
US6716719B2 (en) * 2002-05-29 2004-04-06 Micron Technology, Inc. Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
JP4308502B2 (ja) * 2002-11-15 2009-08-05 浜松ホトニクス株式会社 窒化物薄膜の形成方法及び量子井戸デバイスの製造方法
JP3872027B2 (ja) * 2003-03-07 2007-01-24 株式会社東芝 クリーニング方法及び半導体製造装置
JP2004356298A (ja) * 2003-05-28 2004-12-16 Toshiba Mach Co Ltd 気相成長装置
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7037793B2 (en) * 2004-02-09 2006-05-02 United Microelectronics Corp. Method of forming a transistor using selective epitaxial growth
JP2005243924A (ja) * 2004-02-26 2005-09-08 Hitachi Kokusai Electric Inc 基板処理装置
US7071117B2 (en) * 2004-02-27 2006-07-04 Micron Technology, Inc. Semiconductor devices and methods for depositing a dielectric film
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
JP4369824B2 (ja) * 2004-08-11 2009-11-25 エア・ウォーター株式会社 成膜方法および装置
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7235492B2 (en) * 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7438760B2 (en) * 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
KR101038843B1 (ko) * 2005-10-05 2011-06-03 어플라이드 머티어리얼스, 인코포레이티드 에피택셜막 형성 방법 및 장치
US20070181420A1 (en) * 2006-02-07 2007-08-09 Ming-Tung Wang Wafer stage having an encapsulated central pedestal plate
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
KR101369355B1 (ko) * 2006-07-31 2014-03-04 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 층 형성 동안에 형태를 제어하는 방법

Also Published As

Publication number Publication date
JP2009533844A (ja) 2009-09-17
CN101415865B (zh) 2015-10-07
JP5661083B2 (ja) 2015-01-28
JP2013070068A (ja) 2013-04-18
JP5317956B2 (ja) 2013-10-16
CN101415865A (zh) 2009-04-22
KR20090006178A (ko) 2009-01-14
TW200802543A (en) 2008-01-01
KR101074186B1 (ko) 2011-10-14
US20110290176A1 (en) 2011-12-01
US20070286956A1 (en) 2007-12-13
WO2007117583A3 (en) 2008-08-21
WO2007117583A2 (en) 2007-10-18

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BATCHELOR et al. 1 North Carolina State University, Department of Electrical Engineering, Box 791 1, Raleigh, NC 27695-7911, USA? North Carolina State University, Department of Materials Science and Engineering, Box