JP5661083B2 - エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール - Google Patents
エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール Download PDFInfo
- Publication number
- JP5661083B2 JP5661083B2 JP2012243584A JP2012243584A JP5661083B2 JP 5661083 B2 JP5661083 B2 JP 5661083B2 JP 2012243584 A JP2012243584 A JP 2012243584A JP 2012243584 A JP2012243584 A JP 2012243584A JP 5661083 B2 JP5661083 B2 JP 5661083B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing chamber
- chamber
- epitaxial film
- silicon epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 claims description 103
- 230000015572 biosynthetic process Effects 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims description 34
- 239000001257 hydrogen Substances 0.000 claims description 33
- 239000012159 carrier gas Substances 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 description 35
- 238000000151 deposition Methods 0.000 description 31
- 230000008021 deposition Effects 0.000 description 29
- 239000007789 gas Substances 0.000 description 27
- 238000005530 etching Methods 0.000 description 19
- 238000000407 epitaxy Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (11)
- シリコンエピタキシャル膜を形成する方法において、
シリコンエピタキシャル膜を形成する前に、Cl 2 を使用せずに、かつ、水素ガスを使用して第1の処理チャンバー内で基板を前クリーニングするステップと、
上記第1の処理チャンバーから真空下で移送チャンバーを通して第2の処理チャンバーへ基板を移送するステップと、
水素ガスを使用せずに、かつ、Cl 2 を使用して上記第2の処理チャンバー内で基板上にシリコンエピタキシャル層を形成するステップと、
を備えた方法。 - 真空を維持しながら上記移送チャンバーを通して上記第2の処理チャンバーから第3の処理チャンバーへ基板を移送するステップと、
水素ガスを使用せずに、かつ、Cl 2 を使用して上記第3の処理チャンバー内で基板上にシリコンエピタキシャル層を形成するステップと、
を更に備えた請求項1に記載の方法。 - 基板上にシリコンエピタキシャル層を形成する上記ステップは、窒素キャリヤガスを使用することを含む、請求項1に記載の方法。
- シリコンエピタキシャル膜を形成する方法において、
シリコンエピタキシャル膜形成の前に水素ガスを使用せずに、かつ、Cl2を使用して第1の処理チャンバー内で基板を前クリーニングするステップと、
上記第1の処理チャンバーから真空下で移送チャンバーを通して第2の処理チャンバーへ基板を移送するステップと、
Cl 2 を使用せずに、かつ、水素キャリヤガスを使用して上記第2の処理チャンバー内で基板上にシリコンエピタキシャル層を形成するステップと、
を備えた方法。 - 真空を維持しながら上記移送チャンバーを通して上記第2の処理チャンバーから第3の処理チャンバーへ基板を移送するステップと、
Cl 2 を使用せずに、かつ、水素キャリヤガスを使用して上記第3の処理チャンバー内で基板上にシリコンエピタキシャル層を形成するステップと、
を更に備えた請求項4に記載の方法。 - シリコンエピタキシャル膜の形成に使用するためのクラスターツールにおいて、
シリコンエピタキシャル膜を形成する前に水素ガスを使用せずに、かつ、Cl2を使用して基板をクリーニングするように適応される第1の処理チャンバーと、
Cl 2 を使用せずに、かつ、水素キャリヤガスを使用して基板上にシリコンエピタキシャル層を形成するよう適応される第2の処理チャンバーと、
上記第1及び第2の処理チャンバーに結合され、クラスターツール全体に真空を維持しながら上記第1の処理チャンバーと第2の処理チャンバーとの間で基板を移送するように
適応される移送チャンバーと、
を備えたクラスターツール。 - 上記移送チャンバーに結合され、且つ基板上にシリコンエピタキシャル層を形成するように適応される第3の処理チャンバーを更に備えた、請求項6に記載のクラスターツール。
- 上記第2の処理チャンバー内で反応性の種を活性化するように適応される紫外線装置を更に備えた、請求項6に記載のクラスターツール。
- 上記第1の処理チャンバーは、前クリーニングチャンバーである、請求項6に記載のクラスターツール。
- シリコンエピタキシャル膜の形成に使用するためのクラスターツールにおいて、
シリコンエピタキシャル膜を形成する前にCl 2 を使用せずに、かつ、水素ガスを使用して基板をクリーニングするように適応される第1の処理チャンバーと、
水素以外のキャリヤガスおよびCl 2 を使用して基板上にシリコンエピタキシャル層を形成するよう適応される第2の処理チャンバーと、
上記第1及び第2の処理チャンバーに結合され、クラスターツール全体に真空を維持しながら上記第1の処理チャンバーと第2の処理チャンバーとの間で基板を移送するように適応される移送チャンバーと、
を備えたクラスターツール。 - 上記移送チャンバーに結合され、且つ基板上にシリコンエピタキシャル層を形成するように適応される第3の処理チャンバーを更に備えた、請求項10に記載のクラスターツール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79006606P | 2006-04-07 | 2006-04-07 | |
US60/790,066 | 2006-04-07 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009504308A Division JP5317956B2 (ja) | 2006-04-07 | 2007-04-06 | エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013070068A JP2013070068A (ja) | 2013-04-18 |
JP5661083B2 true JP5661083B2 (ja) | 2015-01-28 |
Family
ID=38581637
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009504308A Active JP5317956B2 (ja) | 2006-04-07 | 2007-04-06 | エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール |
JP2012243584A Active JP5661083B2 (ja) | 2006-04-07 | 2012-11-05 | エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009504308A Active JP5317956B2 (ja) | 2006-04-07 | 2007-04-06 | エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール |
Country Status (6)
Country | Link |
---|---|
US (2) | US20070286956A1 (ja) |
JP (2) | JP5317956B2 (ja) |
KR (1) | KR101074186B1 (ja) |
CN (1) | CN101415865B (ja) |
TW (1) | TWI446409B (ja) |
WO (1) | WO2007117583A2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
CN101283121B (zh) * | 2005-10-05 | 2012-10-03 | 应用材料公司 | 外延薄膜形成的方法与装置 |
WO2007112058A2 (en) * | 2006-03-24 | 2007-10-04 | Applied Materials, Inc. | Carbon precursors for use during silicon epitaxial firm formation |
US7674337B2 (en) | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
US8029620B2 (en) | 2006-07-31 | 2011-10-04 | Applied Materials, Inc. | Methods of forming carbon-containing silicon epitaxial layers |
US20080213477A1 (en) * | 2007-03-02 | 2008-09-04 | Arno Zindel | Inline vacuum processing apparatus and method for processing substrates therein |
US20100096569A1 (en) * | 2008-10-21 | 2010-04-22 | Applied Materials, Inc. | Ultraviolet-transmitting microwave reflector comprising a micromesh screen |
US7964858B2 (en) | 2008-10-21 | 2011-06-21 | Applied Materials, Inc. | Ultraviolet reflector with coolant gas holes and method |
CN101760775A (zh) * | 2009-04-17 | 2010-06-30 | 南安市三晶阳光电力有限公司 | 一种连续液相外延法制备薄膜的方法和装置 |
FR2973159B1 (fr) * | 2011-03-22 | 2013-04-19 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de base |
KR101271247B1 (ko) * | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
KR101271248B1 (ko) * | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
KR101271246B1 (ko) * | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
KR101252742B1 (ko) * | 2011-08-02 | 2013-04-09 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
US10006146B2 (en) | 2012-03-28 | 2018-06-26 | Kookje Electric Korea Co., Ltd. | Cluster apparatus for treating substrate |
KR102245729B1 (ko) | 2013-08-09 | 2021-04-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치 |
WO2017095573A1 (en) | 2015-12-04 | 2017-06-08 | Applied Materials, Inc. | Methods and solutions for cleaning ingaas (or iii-v) substrates |
KR101960763B1 (ko) * | 2016-11-03 | 2019-03-21 | 주식회사 유진테크 | 저온 에피택셜층 형성방법 |
CN111033680A (zh) * | 2017-08-30 | 2020-04-17 | 应用材料公司 | 集成式外延系统高温污染物去除 |
US11081358B2 (en) * | 2018-07-05 | 2021-08-03 | Applied Materials, Inc. | Silicide film nucleation |
US10861722B2 (en) * | 2018-11-13 | 2020-12-08 | Applied Materials, Inc. | Integrated semiconductor processing |
US11605544B2 (en) | 2020-09-18 | 2023-03-14 | Applied Materials, Inc. | Methods and systems for cleaning high aspect ratio structures |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02225399A (ja) * | 1988-11-11 | 1990-09-07 | Fujitsu Ltd | エピタキシャル成長方法および成長装置 |
US5236545A (en) * | 1992-10-05 | 1993-08-17 | The Board Of Governors Of Wayne State University | Method for heteroepitaxial diamond film development |
JP3255469B2 (ja) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | レーザ薄膜形成装置 |
US5495822A (en) * | 1993-08-10 | 1996-03-05 | Nippon Telegraph And Telephone Corporation | Method of selectively growing Si epitaxial film |
KR960026261A (ko) * | 1994-12-14 | 1996-07-22 | 제임스 조셉 드롱 | 재 도입형 콘택 홀을 피복시키거나 또는 충진시키기 위한 방법 및 장치 |
US5637518A (en) * | 1995-10-16 | 1997-06-10 | Micron Technology, Inc. | Method of making a field effect transistor having an elevated source and an elevated drain |
US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
US5849092A (en) * | 1997-02-25 | 1998-12-15 | Applied Materials, Inc. | Process for chlorine trifluoride chamber cleaning |
US5968279A (en) * | 1997-06-13 | 1999-10-19 | Mattson Technology, Inc. | Method of cleaning wafer substrates |
JP3298467B2 (ja) * | 1997-07-18 | 2002-07-02 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
IT1308606B1 (it) * | 1999-02-12 | 2002-01-08 | Lpe Spa | Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore |
WO2000063956A1 (fr) * | 1999-04-20 | 2000-10-26 | Sony Corporation | Procede et dispositif pour realiser un depot de couches minces, et procede pour la production d'un dispositif a semiconducteur a couches minces |
JP2001156077A (ja) * | 1999-11-26 | 2001-06-08 | Nec Corp | 半導体装置の製造方法 |
US20010013313A1 (en) * | 2000-02-10 | 2001-08-16 | Motorola, Inc. | Apparatus for fabricating semiconductor structures and method of forming the structures |
EP1124252A2 (en) * | 2000-02-10 | 2001-08-16 | Applied Materials, Inc. | Apparatus and process for processing substrates |
KR100373853B1 (ko) * | 2000-08-11 | 2003-02-26 | 삼성전자주식회사 | 반도체소자의 선택적 에피택시얼 성장 방법 |
JP2002100762A (ja) * | 2000-09-22 | 2002-04-05 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6569257B1 (en) * | 2000-11-09 | 2003-05-27 | Applied Materials Inc. | Method for cleaning a process chamber |
US6930041B2 (en) * | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
FR2823010B1 (fr) * | 2001-04-02 | 2003-08-15 | St Microelectronics Sa | Procede de fabrication d'un transistor vertical a grille isolee a quadruple canal de conduction, et circuit integre comportant un tel transistor |
US6576535B2 (en) * | 2001-04-11 | 2003-06-10 | Texas Instruments Incorporated | Carbon doped epitaxial layer for high speed CB-CMOS |
KR20020083767A (ko) * | 2001-04-30 | 2002-11-04 | 주식회사 하이닉스반도체 | 선택적 에피택셜 성장 공정에서의 기판 세정 방법 |
US20030066486A1 (en) * | 2001-08-30 | 2003-04-10 | Applied Materials, Inc. | Microwave heat shield for plasma chamber |
JP3660897B2 (ja) * | 2001-09-03 | 2005-06-15 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2003096511A (ja) * | 2001-09-20 | 2003-04-03 | Nkk Corp | 高炉操業方法 |
US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
KR20030035152A (ko) * | 2001-10-30 | 2003-05-09 | 주식회사 하이닉스반도체 | 반도체웨이퍼 제조방법 |
US6590344B2 (en) * | 2001-11-20 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selectively controllable gas feed zones for a plasma reactor |
US6642151B2 (en) * | 2002-03-06 | 2003-11-04 | Applied Materials, Inc | Techniques for plasma etching silicon-germanium |
US6716719B2 (en) * | 2002-05-29 | 2004-04-06 | Micron Technology, Inc. | Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions |
US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
JP4308502B2 (ja) * | 2002-11-15 | 2009-08-05 | 浜松ホトニクス株式会社 | 窒化物薄膜の形成方法及び量子井戸デバイスの製造方法 |
JP3872027B2 (ja) * | 2003-03-07 | 2007-01-24 | 株式会社東芝 | クリーニング方法及び半導体製造装置 |
JP2004356298A (ja) * | 2003-05-28 | 2004-12-16 | Toshiba Mach Co Ltd | 気相成長装置 |
US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US7037793B2 (en) * | 2004-02-09 | 2006-05-02 | United Microelectronics Corp. | Method of forming a transistor using selective epitaxial growth |
JP2005243924A (ja) * | 2004-02-26 | 2005-09-08 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US7071117B2 (en) * | 2004-02-27 | 2006-07-04 | Micron Technology, Inc. | Semiconductor devices and methods for depositing a dielectric film |
US7396743B2 (en) * | 2004-06-10 | 2008-07-08 | Singh Kaushal K | Low temperature epitaxial growth of silicon-containing films using UV radiation |
JP4369824B2 (ja) * | 2004-08-11 | 2009-11-25 | エア・ウォーター株式会社 | 成膜方法および装置 |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7235492B2 (en) * | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
US7816236B2 (en) * | 2005-02-04 | 2010-10-19 | Asm America Inc. | Selective deposition of silicon-containing films |
US7678712B2 (en) * | 2005-03-22 | 2010-03-16 | Honeywell International, Inc. | Vapor phase treatment of dielectric materials |
CN101283121B (zh) * | 2005-10-05 | 2012-10-03 | 应用材料公司 | 外延薄膜形成的方法与装置 |
US20070181420A1 (en) * | 2006-02-07 | 2007-08-09 | Ming-Tung Wang | Wafer stage having an encapsulated central pedestal plate |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
US7588980B2 (en) * | 2006-07-31 | 2009-09-15 | Applied Materials, Inc. | Methods of controlling morphology during epitaxial layer formation |
-
2007
- 2007-04-06 US US11/697,523 patent/US20070286956A1/en not_active Abandoned
- 2007-04-06 CN CN200780012517.0A patent/CN101415865B/zh not_active Expired - Fee Related
- 2007-04-06 JP JP2009504308A patent/JP5317956B2/ja active Active
- 2007-04-06 KR KR1020087027246A patent/KR101074186B1/ko active IP Right Grant
- 2007-04-06 WO PCT/US2007/008549 patent/WO2007117583A2/en active Application Filing
- 2007-04-09 TW TW096112382A patent/TWI446409B/zh active
-
2011
- 2011-08-09 US US13/206,088 patent/US20110290176A1/en not_active Abandoned
-
2012
- 2012-11-05 JP JP2012243584A patent/JP5661083B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20110290176A1 (en) | 2011-12-01 |
JP5317956B2 (ja) | 2013-10-16 |
JP2013070068A (ja) | 2013-04-18 |
KR101074186B1 (ko) | 2011-10-14 |
WO2007117583A3 (en) | 2008-08-21 |
JP2009533844A (ja) | 2009-09-17 |
KR20090006178A (ko) | 2009-01-14 |
CN101415865B (zh) | 2015-10-07 |
CN101415865A (zh) | 2009-04-22 |
WO2007117583A2 (en) | 2007-10-18 |
TWI446409B (zh) | 2014-07-21 |
TW200802543A (en) | 2008-01-01 |
US20070286956A1 (en) | 2007-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5661083B2 (ja) | エピタキシャル膜を形成する方法、及び、エピタキシャル膜の形成に使用するためのクラスターツール | |
TWI741121B (zh) | 用於選擇性磊晶之方法及設備 | |
US8445389B2 (en) | Etchant treatment processes for substrate surfaces and chamber surfaces | |
JP5090451B2 (ja) | 炭素含有シリコンエピタキシャル層の形成方法 | |
US9171718B2 (en) | Method of epitaxial germanium tin alloy surface preparation | |
US5089441A (en) | Low-temperature in-situ dry cleaning process for semiconductor wafers | |
TW200807550A (en) | Pre-cleaning of substrates in epitaxy chambers | |
WO2008033186A1 (en) | Methods of controlling morphology during epitaxial layer formation | |
US20200035525A1 (en) | Integrated system for semiconductor process | |
TWI738207B (zh) | 用於金屬矽化物沉積的方法及設備 | |
JP2005183514A (ja) | 半導体装置の製造方法 | |
EP1848550A2 (en) | Etchant treatment processes for substrate surfaces and chamber surfaces | |
JP4490760B2 (ja) | 半導体装置の製造方法及び基板処理装置 | |
JP2987926B2 (ja) | 気相成長方法 | |
US11769666B2 (en) | Selective deposition of silicon using deposition-treat-etch process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131008 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140107 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140403 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140507 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140804 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141014 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141104 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141202 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5661083 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |