JP2012531045A5 - - Google Patents

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Publication number
JP2012531045A5
JP2012531045A5 JP2012516213A JP2012516213A JP2012531045A5 JP 2012531045 A5 JP2012531045 A5 JP 2012531045A5 JP 2012516213 A JP2012516213 A JP 2012516213A JP 2012516213 A JP2012516213 A JP 2012516213A JP 2012531045 A5 JP2012531045 A5 JP 2012531045A5
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JP
Japan
Prior art keywords
boron
nitrogen
atom concentration
less
layer comprises
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2012516213A
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English (en)
Japanese (ja)
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JP2012531045A (ja
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Priority claimed from US12/489,124 external-priority patent/US8563090B2/en
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Publication of JP2012531045A publication Critical patent/JP2012531045A/ja
Publication of JP2012531045A5 publication Critical patent/JP2012531045A5/ja
Pending legal-status Critical Current

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JP2012516213A 2009-06-22 2010-06-15 ホウ素膜界面技術 Pending JP2012531045A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/489,124 US8563090B2 (en) 2008-10-16 2009-06-22 Boron film interface engineering
US12/489,124 2009-06-22
PCT/US2010/038713 WO2011005433A2 (en) 2009-06-22 2010-06-15 Boron film interface engineering

Publications (2)

Publication Number Publication Date
JP2012531045A JP2012531045A (ja) 2012-12-06
JP2012531045A5 true JP2012531045A5 (enExample) 2013-08-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012516213A Pending JP2012531045A (ja) 2009-06-22 2010-06-15 ホウ素膜界面技術

Country Status (6)

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US (1) US8563090B2 (enExample)
JP (1) JP2012531045A (enExample)
KR (1) KR20120093139A (enExample)
CN (1) CN102460679A (enExample)
TW (1) TWI479044B (enExample)
WO (1) WO2011005433A2 (enExample)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084105B2 (en) * 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US8337950B2 (en) * 2007-06-19 2012-12-25 Applied Materials, Inc. Method for depositing boron-rich films for lithographic mask applications
US7910491B2 (en) * 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
CN102487032A (zh) * 2010-12-02 2012-06-06 中芯国际集成电路制造(北京)有限公司 浅沟槽隔离结构的形成方法
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US8617938B2 (en) 2011-01-25 2013-12-31 International Business Machines Corporation Device and method for boron diffusion in semiconductors
CN102643034A (zh) * 2011-02-21 2012-08-22 鸿富锦精密工业（深圳）有限公司 功能玻璃及其制备方法
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
CN102766908B (zh) * 2012-07-25 2016-02-24 苏州阿特斯阳光电力科技有限公司 晶体硅太阳能电池的硼扩散方法
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
CN103594343A (zh) * 2012-08-13 2014-02-19 中芯国际集成电路制造(上海)有限公司 高k膜的制作方法及晶体管的形成方法
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
JP2015103729A (ja) 2013-11-27 2015-06-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
JP6247095B2 (ja) * 2013-12-27 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6254848B2 (ja) * 2014-01-10 2017-12-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
JP6320129B2 (ja) 2014-04-02 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
JP6360770B2 (ja) * 2014-06-02 2018-07-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
WO2016160811A1 (en) 2015-04-03 2016-10-06 Applied Materials, Inc. Process of filling the high aspect ratio trenches by co-flowing ligands during thermal cvd
WO2016195983A1 (en) * 2015-06-05 2016-12-08 Applied Materials, Inc. Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
CN108220922B (zh) * 2016-12-15 2020-12-29 东京毅力科创株式会社 成膜方法、硼膜以及成膜装置
WO2019193872A1 (ja) * 2018-04-04 2019-10-10 東京エレクトロン株式会社 ボロン系膜の成膜方法および成膜装置
KR102177139B1 (ko) * 2019-05-17 2020-11-11 비씨엔씨 주식회사 저항 조절이 가능한 반도체 제조용 부품
US11152388B2 (en) * 2019-10-15 2021-10-19 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
KR102748790B1 (ko) * 2019-11-08 2024-12-30 어플라이드 머티어리얼스, 인코포레이티드 재료 표면 거칠기를 감소시키기 위한 방법들
US20220068614A1 (en) * 2020-08-28 2022-03-03 Coorstek Kk Semiconductor manufacturing member and manufacturing method therefor
JP7575176B2 (ja) * 2021-01-27 2024-10-29 東京エレクトロン株式会社 窒化ホウ素膜の成膜方法
JP7638766B2 (ja) * 2021-04-05 2025-03-04 東京エレクトロン株式会社 成膜方法及び処理装置
US20230051200A1 (en) * 2021-08-11 2023-02-16 Applied Materials, Inc. Seam-free gapfill deposition
JP7768649B2 (ja) * 2022-04-12 2025-11-12 東京エレクトロン株式会社 成膜方法及び処理装置

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
JPS5772514A (en) * 1980-10-20 1982-05-06 Kanebo Ltd Transfer of container
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4571819A (en) 1984-11-01 1986-02-25 Ncr Corporation Method for forming trench isolation structures
JPH0640546B2 (ja) * 1985-07-09 1994-05-25 松下電器産業株式会社 窒化シリコン薄膜の製造方法
JPS62109976A (ja) * 1985-11-08 1987-05-21 Toshiba Tungaloy Co Ltd 立方晶窒化ホウ素被覆部材
JP2606318B2 (ja) * 1988-09-29 1997-04-30 富士通株式会社 絶縁膜の形成方法
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
JPH04228572A (ja) 1990-08-10 1992-08-18 Sumitomo Electric Ind Ltd 硬質窒化ホウ素合成法
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
JP2664866B2 (ja) 1993-04-09 1997-10-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 窒化ホウ素をエッチングする方法
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
TW460943B (en) * 1997-06-11 2001-10-21 Applied Materials Inc Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
KR100475048B1 (ko) 1998-09-24 2005-05-27 삼성전자주식회사 이중층의 질화물라이너를 갖는 트렌치 소자분리방법
JP2000174019A (ja) * 1998-12-01 2000-06-23 Fujitsu Ltd 半導体装置及びその製造方法
JP3601988B2 (ja) * 1999-01-04 2004-12-15 株式会社東芝 絶縁膜の形成方法
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4764559B2 (ja) * 2001-03-28 2011-09-07 隆 杉野 成膜方法及び成膜装置
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US20020197823A1 (en) 2001-05-18 2002-12-26 Yoo Jae-Yoon Isolation method for semiconductor device
US6531377B2 (en) 2001-07-13 2003-03-11 Infineon Technologies Ag Method for high aspect ratio gap fill using sequential HDP-CVD
WO2003009392A1 (en) * 2001-07-17 2003-01-30 Kabushiki Kaisha Watanabe Shoko Semiconductor device and method for fabricating the same and semiconductor device application system
KR100448714B1 (ko) * 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
US6734082B2 (en) 2002-08-06 2004-05-11 Chartered Semiconductor Manufacturing Ltd. Method of forming a shallow trench isolation structure featuring a group of insulator liner layers located on the surfaces of a shallow trench shape
US7081414B2 (en) 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
JP2005159182A (ja) * 2003-11-27 2005-06-16 Kyocera Corp プラズマｃｖｄ装置の処理方法
JP2006013184A (ja) * 2004-06-28 2006-01-12 Mitsubishi Heavy Ind Ltd 窒化ホウ素膜の成膜方法
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2007053276A (ja) * 2005-08-19 2007-03-01 Angstrom Technologies:Kk 半導体装置の製造方法及び製造装置
US7371649B2 (en) 2005-09-13 2008-05-13 United Microelectronics Corp. Method of forming carbon-containing silicon nitride layer
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US20090093100A1 (en) * 2007-10-09 2009-04-09 Li-Qun Xia Method for forming an air gap in multilevel interconnect structure
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
JP5238615B2 (ja) * 2009-06-04 2013-07-17 株式会社東芝 半導体装置の製造方法

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