JP2013080891A5 - - Google Patents
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- Publication number
- JP2013080891A5 JP2013080891A5 JP2012060873A JP2012060873A JP2013080891A5 JP 2013080891 A5 JP2013080891 A5 JP 2013080891A5 JP 2012060873 A JP2012060873 A JP 2012060873A JP 2012060873 A JP2012060873 A JP 2012060873A JP 2013080891 A5 JP2013080891 A5 JP 2013080891A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- adhesion layer
- silicon
- manufacturing
- gas containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 5
- 229910052796 boron Inorganic materials 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 5
- 229910052721 tungsten Inorganic materials 0.000 claims 5
- 239000010937 tungsten Substances 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012060873A JP5710529B2 (ja) | 2011-09-22 | 2012-03-16 | 半導体装置及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011207829 | 2011-09-22 | ||
| JP2011207829 | 2011-09-22 | ||
| JP2012060873A JP5710529B2 (ja) | 2011-09-22 | 2012-03-16 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013080891A JP2013080891A (ja) | 2013-05-02 |
| JP2013080891A5 true JP2013080891A5 (enExample) | 2014-03-20 |
| JP5710529B2 JP5710529B2 (ja) | 2015-04-30 |
Family
ID=47910379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012060873A Expired - Fee Related JP5710529B2 (ja) | 2011-09-22 | 2012-03-16 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8742592B2 (enExample) |
| JP (1) | JP5710529B2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| JP2014192485A (ja) * | 2013-03-28 | 2014-10-06 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
| JP6311547B2 (ja) * | 2013-11-05 | 2018-04-18 | 東京エレクトロン株式会社 | マスク構造体の形成方法、成膜装置及び記憶媒体 |
| TWI672737B (zh) * | 2013-12-27 | 2019-09-21 | 美商蘭姆研究公司 | 允許低電阻率鎢特徵物填充之鎢成核程序 |
| US9627498B2 (en) * | 2015-05-20 | 2017-04-18 | Macronix International Co., Ltd. | Contact structure for thin film semiconductor |
| WO2017056187A1 (ja) * | 2015-09-29 | 2017-04-06 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
| US9449921B1 (en) | 2015-12-15 | 2016-09-20 | International Business Machines Corporation | Voidless contact metal structures |
| US10468264B2 (en) * | 2016-07-04 | 2019-11-05 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device |
| JP6937604B2 (ja) * | 2017-04-26 | 2021-09-22 | 東京エレクトロン株式会社 | タングステン膜を形成する方法 |
| US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
| CN111052312B (zh) * | 2018-03-26 | 2025-04-15 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理装置及程序 |
| KR102806630B1 (ko) | 2018-05-03 | 2025-05-12 | 램 리써치 코포레이션 | 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법 |
| SG11202101796RA (en) * | 2018-10-29 | 2021-05-28 | Applied Materials Inc | Linerless continuous amorphous metal films |
| JP7649741B2 (ja) | 2018-12-14 | 2025-03-21 | ラム リサーチ コーポレーション | ３ｄ ｎａｎｄ構造上の原子層堆積 |
| KR20210141762A (ko) | 2019-04-11 | 2021-11-23 | 램 리써치 코포레이션 | 고 단차 커버리지 (step coverage) 텅스텐 증착 |
| US12237221B2 (en) | 2019-05-22 | 2025-02-25 | Lam Research Corporation | Nucleation-free tungsten deposition |
| WO2021030836A1 (en) | 2019-08-12 | 2021-02-18 | Lam Research Corporation | Tungsten deposition |
| US11469139B2 (en) | 2019-09-20 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bottom-up formation of contact plugs |
| US11257755B2 (en) | 2020-06-15 | 2022-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal loss prevention in conductive structures |
| JP7449790B2 (ja) * | 2020-06-24 | 2024-03-14 | 株式会社アルバック | 金属配線の形成方法及び金属配線の構造体 |
| KR20230104735A (ko) * | 2020-12-17 | 2023-07-10 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 프로그램, 기판 처리 장치 및 반도체 장치의 제조 방법 |
| JP7647185B2 (ja) * | 2021-03-09 | 2025-03-18 | 東京エレクトロン株式会社 | タングステン膜を成膜する方法、及びシステム |
| KR102670094B1 (ko) * | 2021-04-02 | 2024-05-29 | 닛폰세이테츠 가부시키가이샤 | 무방향성 전자 강판 |
| JP2024106554A (ja) * | 2023-01-27 | 2024-08-08 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP2024106552A (ja) * | 2023-01-27 | 2024-08-08 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP2024106553A (ja) * | 2023-01-27 | 2024-08-08 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5462895A (en) * | 1991-09-04 | 1995-10-31 | Oki Electric Industry Co., Ltd. | Method of making semiconductor device comprising a titanium nitride film |
| US5700716A (en) * | 1996-02-23 | 1997-12-23 | Micron Technology, Inc. | Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers |
| US5945350A (en) * | 1996-09-13 | 1999-08-31 | Micron Technology, Inc. | Methods for use in formation of titanium nitride interconnects and interconnects formed using same |
| US6099904A (en) * | 1997-12-02 | 2000-08-08 | Applied Materials, Inc. | Low resistivity W using B2 H6 nucleation step |
| KR100272523B1 (ko) * | 1998-01-26 | 2000-12-01 | 김영환 | 반도체소자의배선형성방법 |
| KR100273767B1 (ko) * | 1998-10-28 | 2001-01-15 | 윤종용 | 반도체소자의 텅스텐막 제조방법 및 그에 따라 제조되는 반도체소자 |
| WO2003016588A1 (fr) | 2001-08-14 | 2003-02-27 | Tokyo Electron Limited | Procede pour produire un film de tungstene |
| US7067416B2 (en) * | 2001-08-29 | 2006-06-27 | Micron Technology, Inc. | Method of forming a conductive contact |
| JP3759525B2 (ja) | 2003-10-27 | 2006-03-29 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP2009024252A (ja) * | 2007-05-15 | 2009-02-05 | Applied Materials Inc | タングステン材料の原子層堆積法 |
| JP5547380B2 (ja) | 2008-04-30 | 2014-07-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2012
- 2012-03-16 JP JP2012060873A patent/JP5710529B2/ja not_active Expired - Fee Related
- 2012-03-20 US US13/424,791 patent/US8742592B2/en active Active
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