JP5710529B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5710529B2
JP5710529B2 JP2012060873A JP2012060873A JP5710529B2 JP 5710529 B2 JP5710529 B2 JP 5710529B2 JP 2012060873 A JP2012060873 A JP 2012060873A JP 2012060873 A JP2012060873 A JP 2012060873A JP 5710529 B2 JP5710529 B2 JP 5710529B2
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Japan
Prior art keywords
film
gas
tungsten
silicon
layer
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Expired - Fee Related
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JP2012060873A
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English (en)
Japanese (ja)
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JP2013080891A5 (enExample
JP2013080891A (ja
Inventor
月 啓 若
月 啓 若
島 一 郎 水
島 一 郎 水
田 敦 子 坂
田 敦 子 坂
村 政 幸 北
村 政 幸 北
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Toshiba Corp
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Toshiba Corp
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Publication of JP2013080891A5 publication Critical patent/JP2013080891A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012060873A 2011-09-22 2012-03-16 半導体装置及びその製造方法 Expired - Fee Related JP5710529B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012060873A JP5710529B2 (ja) 2011-09-22 2012-03-16 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011207829 2011-09-22
JP2011207829 2011-09-22
JP2012060873A JP5710529B2 (ja) 2011-09-22 2012-03-16 半導体装置及びその製造方法

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JP2013080891A JP2013080891A (ja) 2013-05-02
JP2013080891A5 JP2013080891A5 (enExample) 2014-03-20
JP5710529B2 true JP5710529B2 (ja) 2015-04-30

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP2014192485A (ja) * 2013-03-28 2014-10-06 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法及び基板処理装置
JP6311547B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 マスク構造体の形成方法、成膜装置及び記憶媒体
TWI672737B (zh) * 2013-12-27 2019-09-21 美商蘭姆研究公司 允許低電阻率鎢特徵物填充之鎢成核程序
US9627498B2 (en) * 2015-05-20 2017-04-18 Macronix International Co., Ltd. Contact structure for thin film semiconductor
WO2017056187A1 (ja) * 2015-09-29 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
US9449921B1 (en) * 2015-12-15 2016-09-20 International Business Machines Corporation Voidless contact metal structures
US10468264B2 (en) * 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
JP6937604B2 (ja) * 2017-04-26 2021-09-22 東京エレクトロン株式会社 タングステン膜を形成する方法
KR102808924B1 (ko) 2017-08-14 2025-05-15 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
CN111052312B (zh) * 2018-03-26 2025-04-15 株式会社国际电气 半导体器件的制造方法、衬底处理装置及程序
JP2021523292A (ja) 2018-05-03 2021-09-02 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法
WO2020091961A1 (en) * 2018-10-29 2020-05-07 Applied Materials, Inc. Linerless continuous amorphous metal films
JP7649741B2 (ja) 2018-12-14 2025-03-21 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
KR20220047333A (ko) 2019-08-12 2022-04-15 램 리써치 코포레이션 텅스텐 증착
US11469139B2 (en) * 2019-09-20 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bottom-up formation of contact plugs
US11257755B2 (en) 2020-06-15 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Metal loss prevention in conductive structures
JP7449790B2 (ja) * 2020-06-24 2024-03-14 株式会社アルバック 金属配線の形成方法及び金属配線の構造体
WO2022130559A1 (ja) * 2020-12-17 2022-06-23 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
JP7647185B2 (ja) * 2021-03-09 2025-03-18 東京エレクトロン株式会社 タングステン膜を成膜する方法、及びシステム
KR102670094B1 (ko) * 2021-04-02 2024-05-29 닛폰세이테츠 가부시키가이샤 무방향성 전자 강판
JP2024106554A (ja) * 2023-01-27 2024-08-08 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024106553A (ja) * 2023-01-27 2024-08-08 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024106552A (ja) * 2023-01-27 2024-08-08 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5462895A (en) * 1991-09-04 1995-10-31 Oki Electric Industry Co., Ltd. Method of making semiconductor device comprising a titanium nitride film
US5700716A (en) * 1996-02-23 1997-12-23 Micron Technology, Inc. Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers
US5945350A (en) * 1996-09-13 1999-08-31 Micron Technology, Inc. Methods for use in formation of titanium nitride interconnects and interconnects formed using same
US6099904A (en) * 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
KR100272523B1 (ko) * 1998-01-26 2000-12-01 김영환 반도체소자의배선형성방법
KR100273767B1 (ko) * 1998-10-28 2001-01-15 윤종용 반도체소자의 텅스텐막 제조방법 및 그에 따라 제조되는 반도체소자
KR100783844B1 (ko) 2001-08-14 2007-12-10 동경 엘렉트론 주식회사 텅스텐막의 형성 방법
US7067416B2 (en) * 2001-08-29 2006-06-27 Micron Technology, Inc. Method of forming a conductive contact
JP3759525B2 (ja) 2003-10-27 2006-03-29 松下電器産業株式会社 半導体装置の製造方法
CN101308794B (zh) * 2007-05-15 2010-09-15 应用材料股份有限公司 钨材料的原子层沉积
JP5547380B2 (ja) 2008-04-30 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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US20130075912A1 (en) 2013-03-28
JP2013080891A (ja) 2013-05-02

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