JP2013540090A5 - - Google Patents

Download PDF

Info

Publication number
JP2013540090A5
JP2013540090A5 JP2013529138A JP2013529138A JP2013540090A5 JP 2013540090 A5 JP2013540090 A5 JP 2013540090A5 JP 2013529138 A JP2013529138 A JP 2013529138A JP 2013529138 A JP2013529138 A JP 2013529138A JP 2013540090 A5 JP2013540090 A5 JP 2013540090A5
Authority
JP
Japan
Prior art keywords
substrate
etching
oxide layer
rate
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013529138A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013540090A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2011/028190 external-priority patent/WO2012036760A1/en
Publication of JP2013540090A publication Critical patent/JP2013540090A/ja
Publication of JP2013540090A5 publication Critical patent/JP2013540090A5/ja
Pending legal-status Critical Current

Links

JP2013529138A 2010-09-16 2011-03-11 高効率かつ低コストの結晶珪素太陽電池セルのための方法、プロセス、及び製造技術 Pending JP2013540090A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38343510P 2010-09-16 2010-09-16
US61/383,435 2010-09-16
PCT/US2011/028190 WO2012036760A1 (en) 2010-09-16 2011-03-11 Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells

Publications (2)

Publication Number Publication Date
JP2013540090A JP2013540090A (ja) 2013-10-31
JP2013540090A5 true JP2013540090A5 (enExample) 2014-05-01

Family

ID=45831899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013529138A Pending JP2013540090A (ja) 2010-09-16 2011-03-11 高効率かつ低コストの結晶珪素太陽電池セルのための方法、プロセス、及び製造技術

Country Status (10)

Country Link
US (2) US9068112B2 (enExample)
EP (1) EP2616401A4 (enExample)
JP (1) JP2013540090A (enExample)
KR (1) KR101836548B1 (enExample)
AU (1) AU2011302575A1 (enExample)
BR (1) BR112013006364A2 (enExample)
MX (1) MX2013003007A (enExample)
RU (1) RU2013117118A (enExample)
TW (1) TW201228010A (enExample)
WO (1) WO2012036760A1 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101915161B1 (ko) 2012-11-14 2019-01-07 주성엔지니어링(주) 태양전지의 제조방법
JP6295953B2 (ja) * 2012-07-19 2018-03-20 日立化成株式会社 太陽電池素子及びその製造方法、並びに太陽電池モジュール
KR101890282B1 (ko) * 2012-08-06 2018-08-22 엘지전자 주식회사 선택적 에미터를 갖는 태양전지 및 이의 제조 방법
TWI643351B (zh) * 2013-01-31 2018-12-01 澳洲商新南創新有限公司 太陽能電池金屬化及互連方法
US9859455B2 (en) 2013-02-08 2018-01-02 International Business Machines Corporation Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field
US9640699B2 (en) * 2013-02-08 2017-05-02 International Business Machines Corporation Interdigitated back contact heterojunction photovoltaic device
JP6115634B2 (ja) * 2013-06-06 2017-04-19 信越化学工業株式会社 ｐ型選択エミッタ形成方法
CN105453238B (zh) * 2013-06-11 2020-11-10 斯派克迈特股份有限公司 用于半导体制造过程和/或方法的化学组合物、使用其制得的装置
WO2014205238A1 (en) * 2013-06-19 2014-12-24 The Board Of Trustees Of The Leland Stanford Junior University Novel dielectric nano-structure for light trapping in solar cells
TWI497733B (zh) * 2013-06-20 2015-08-21 Motech Ind Inc 背接觸太陽能電池及其模組
US10217893B2 (en) 2013-09-16 2019-02-26 Special Materials Research And Technology, Inc. (Specmat) Methods, apparatus, and systems for passivation of solar cells and other semiconductor devices
RU2540753C1 (ru) * 2013-10-31 2015-02-10 Федеральное государственное бюджетное учреждение науки Ордена Трудового Красного Знамени Институт химии силикатов им. И.В. Гребенщикова Российской академии наук (ИХС РАН) Способ поиска новых кристаллических соединений в стеклообразующих эвтектических оксидных системах, кристаллизующихся в порошке
CN106415783B (zh) * 2014-03-18 2020-03-20 斯派克迈特股份有限公司 氧化物层的工艺和制造技术
ES2864962T3 (es) * 2014-04-30 2021-10-14 1366 Tech Inc Procedimientos y aparatos para fabricar obleas semiconductoras delgadas con regiones controladas localmente que son relativamente más gruesas que otras regiones
KR101541422B1 (ko) 2014-05-15 2015-08-03 한국에너지기술연구원 도금을 이용한 태양전지 제조 방법
US10619097B2 (en) * 2014-06-30 2020-04-14 Specmat, Inc. Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation
CN104123999A (zh) * 2014-07-07 2014-10-29 苏州世优佳电子科技有限公司 一种石墨烯导电薄膜的制备方法
KR101622091B1 (ko) * 2014-08-20 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9520507B2 (en) 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
US9508667B2 (en) * 2014-12-23 2016-11-29 Intel Corporation Formation of solder and copper interconnect structures and associated techniques and configurations
TWI511316B (zh) * 2015-02-13 2015-12-01 Neo Solar Power Corp 異質接面太陽能電池及其製造方法
EP3271946A4 (en) * 2015-03-19 2019-12-04 Specmat Inc. SILICULAR SEMICONDUCTOR STRUCTURES, METHOD FOR THE MANUFACTURE THEREOF AND DEVICES THEREWITH
US9953841B2 (en) * 2015-05-08 2018-04-24 Macronix International Co., Ltd. Semiconductor device and method of fabricating the same
TWI568012B (zh) * 2015-06-11 2017-01-21 太極能源科技股份有限公司 雙面太陽能電池製造方法
DE102016101801B4 (de) * 2016-02-02 2021-01-14 Infineon Technologies Ag Lastanschluss eines leistungshalbleiterbauelements, leistungshalbleitermodul damit und herstellungsverfahren dafür
US9859127B1 (en) * 2016-06-10 2018-01-02 Lam Research Corporation Line edge roughness improvement with photon-assisted plasma process
RU2653843C2 (ru) * 2016-08-01 2018-05-15 Акционерное общество "Научно-производственное предприятие "Алмаз" (АО "НПП "Алмаз") Способ повышения плотности и стабильности тока матрицы многоострийного автоэмиссионного катода
CN106328765A (zh) * 2016-08-31 2017-01-11 晋能清洁能源科技有限公司 一种高效perc晶体硅太阳能电池的制备方法及工艺
DE102016225120A1 (de) * 2016-12-15 2018-06-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Reduzierung der optischen Reflexion an Solarzellen
US10269279B2 (en) 2017-03-24 2019-04-23 Misapplied Sciences, Inc. Display system and method for delivering multi-view content
US10163974B2 (en) * 2017-05-17 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming absorption enhancement structure for image sensor
CN109004042A (zh) * 2017-06-07 2018-12-14 中国科学院物理研究所 垂直型光电子器件及其制造方法
CN109119337A (zh) * 2017-06-23 2019-01-01 镇江仁德新能源科技有限公司 一种太阳能级多晶硅片表面制绒方法
US10427045B2 (en) 2017-07-12 2019-10-01 Misapplied Sciences, Inc. Multi-view (MV) display systems and methods for quest experiences, challenges, scavenger hunts, treasure hunts and alternate reality games
US10565616B2 (en) 2017-07-13 2020-02-18 Misapplied Sciences, Inc. Multi-view advertising system and method
US10404974B2 (en) 2017-07-21 2019-09-03 Misapplied Sciences, Inc. Personalized audio-visual systems
DE102017121228A1 (de) * 2017-09-13 2019-03-14 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Oberflächenbehandlung einer Probe die mindestens eine Oberfläche eines Metalloxids aufweist und Metalloxid mit behandelter Oberfläche
CN107910398B (zh) * 2017-10-12 2020-08-04 环晟光伏(江苏)有限公司 P型perc双面太阳电池的制作方法
US10778962B2 (en) 2017-11-10 2020-09-15 Misapplied Sciences, Inc. Precision multi-view display
CN108470795A (zh) * 2018-02-12 2018-08-31 镇江仁德新能源科技有限公司 一种太阳能级多晶硅片表面制绒方法
CN111819498A (zh) 2018-03-06 2020-10-23 Asml控股股份有限公司 抗反射光学衬底和制造方法
CN109351324A (zh) * 2018-11-09 2019-02-19 天津碧水源膜材料有限公司 选择性铵离子筛及其制备方法与应用
GB201821095D0 (en) * 2018-12-21 2019-02-06 Univ Loughborough Cover sheet for photovoltaic panel
TWI737311B (zh) * 2020-05-25 2021-08-21 大葉大學 利用液相沉積製作太陽能電池的製備方法及其太陽能電池
CN115621337A (zh) * 2021-07-16 2023-01-17 福建钜能电力有限公司 一种hjt电池生产中的单晶制绒工艺
CN115188834B (zh) 2021-09-10 2023-09-22 上海晶科绿能企业管理有限公司 太阳能电池及其制备方法、光伏组件
CN114005886B (zh) * 2021-10-29 2024-01-09 苏州光汇新能源科技有限公司 一种适用于室内发电的硅异质结太阳电池结构及其制备方法
JP2023143691A (ja) * 2022-03-24 2023-10-06 パナソニックＩｐマネジメント株式会社 触媒層付酸化スズ積層膜およびその形成方法
CN115000203B (zh) * 2022-06-20 2023-11-21 山东大学 一种单晶硅微纳双尺度减反射绒面及其制备方法
US12080569B1 (en) 2022-06-23 2024-09-03 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Energy-saving heat treatment device for metal substrate in corrosive gas
CN120897581A (zh) * 2024-12-02 2025-11-04 隆基绿能科技股份有限公司 一种太阳能电池、光伏组件和半导体基片

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002512A (en) * 1974-09-16 1977-01-11 Western Electric Company, Inc. Method of forming silicon dioxide
US4578419A (en) 1985-03-28 1986-03-25 Amchem Products, Inc. Iodine compound activation of autodeposition baths
JPH05148657A (ja) * 1991-10-04 1993-06-15 Toyota Central Res & Dev Lab Inc 光利用めつき液およびめつき方法
IT1252896B (it) 1991-11-08 1995-07-05 Perini Fabio Spa Apparecchiatura perfezionata per incollare il lembo finale di rotoli di materiale nastriforme
JP2681433B2 (ja) 1992-09-30 1997-11-26 株式会社フロンテック エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法
SE501195C2 (sv) 1993-04-26 1994-12-05 Pharmacia Lkb Biotech Sätt och anordning för vätskekromatografi
US5714407A (en) * 1994-03-31 1998-02-03 Frontec Incorporated Etching agent, electronic device and method of manufacturing the device
JP2755376B2 (ja) * 1994-06-03 1998-05-20 株式会社フロンテック 電気光学素子の製造方法
JPH08264640A (ja) * 1995-03-23 1996-10-11 Ube Ind Ltd 複合半導体基板
US5601656A (en) 1995-09-20 1997-02-11 Micron Technology, Inc. Methods for cleaning silicon wafers with an aqueous solution of hydrofluoric acid and hydriodic acid
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
US6593077B2 (en) 1999-03-22 2003-07-15 Special Materials Research And Technology, Inc. Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate
US6080683A (en) 1999-03-22 2000-06-27 Special Materials Research And Technology, Inc. Room temperature wet chemical growth process of SiO based oxides on silicon
ATE405618T1 (de) * 1999-08-13 2008-09-15 Cabot Microelectronics Corp Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
JP2001110801A (ja) * 1999-10-05 2001-04-20 Takeshi Yao パターン形成方法、並びに電子素子、光学素子及び回路基板
DE60136703D1 (de) 2000-05-04 2009-01-08 Schott Donnelly Llc Verfahren zur Herstellung einer electrochromen Tafel
WO2002046483A2 (en) 2000-12-06 2002-06-13 Northwestern University Silver stain removal from dna detection chips by cyanide etching or sonication
US7045098B2 (en) * 2001-02-02 2006-05-16 James Matthew Stephens Apparatus and method for removing interfering substances from a urine sample using a chemical oxidant
US6613697B1 (en) * 2001-06-26 2003-09-02 Special Materials Research And Technology, Inc. Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
US6652661B2 (en) * 2001-10-12 2003-11-25 Bobolink, Inc. Radioactive decontamination and translocation method
JP4010819B2 (ja) 2002-02-04 2007-11-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US7008839B2 (en) * 2002-03-08 2006-03-07 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor thin film
US6935756B2 (en) * 2002-06-11 2005-08-30 3M Innovative Properties Company Retroreflective articles having moire-like pattern
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
SG129274A1 (en) * 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
US7235495B2 (en) * 2003-07-31 2007-06-26 Fsi International, Inc. Controlled growth of highly uniform, oxide layers, especially ultrathin layers
JP4400281B2 (ja) 2004-03-29 2010-01-20 信越半導体株式会社 シリコンウエーハの結晶欠陥評価方法
US20060213868A1 (en) * 2005-03-23 2006-09-28 Siddiqui Junaid A Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole
JP4692072B2 (ja) * 2005-05-19 2011-06-01 三菱化学株式会社 発光ダイオードの製造方法
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
KR100678482B1 (ko) 2006-01-17 2007-02-02 삼성전자주식회사 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR20090005489A (ko) 2007-07-09 2009-01-14 삼성전자주식회사 반도체 습식 에천트 및 그를 이용한 배선 구조체의형성방법
KR100930672B1 (ko) 2008-01-11 2009-12-09 제일모직주식회사 실리콘계 하드마스크 조성물 및 이를 이용한 반도체집적회로 디바이스의 제조방법
JP5453725B2 (ja) * 2008-03-11 2014-03-26 株式会社リコー エレクトロクロミック化合物およびそれを用いたエレクトロクロミック表示素子
JP2010077010A (ja) * 2008-09-01 2010-04-08 Hiroshima Univ 結晶製造装置、それを用いて製造された半導体デバイスおよびそれを用いた半導体デバイスの製造方法
US8338692B2 (en) 2008-11-27 2012-12-25 The Yokohama Rubber Co., Ltd. Electrolyte for photoelectric conversion elements, and photoelectric conversion element and dye-sensitized solar cell using the electrolyte
US8318606B2 (en) 2009-08-25 2012-11-27 Lsi Corporation Dielectric etching
US20130247971A1 (en) 2011-09-20 2013-09-26 Air Products And Chemicals, Inc. Oxygen Containing Precursors for Photovoltaic Passivation
WO2013130179A2 (en) 2012-01-03 2013-09-06 Applied Materials, Inc. Buffer layer for improving the performance and stability of surface passivation of si solar cells
JP2013165160A (ja) 2012-02-10 2013-08-22 Shin Etsu Chem Co Ltd 太陽電池の製造方法及び太陽電池
US9012261B2 (en) * 2013-03-13 2015-04-21 Intermolecular, Inc. High productivity combinatorial screening for stable metal oxide TFTs
US9129814B2 (en) * 2013-11-25 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning

Similar Documents

Publication Publication Date Title
JP2013540090A5 (enExample)
Seebauer et al. Trends in semiconductor defect engineering at the nanoscale
JP2011243976A5 (ja) 半導体装置
JP2013077836A5 (enExample)
EP2535343A3 (en) Organoaminosilane precursors and methods for making and using same
EP2458622A3 (en) Compositions and methods for texturing of silicon wafers
JP2014096359A5 (ja) 電極材料
DE602007000498D1 (de) Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren
JP2012102113A5 (enExample)
TW201129659A (en) Composition and method for polishing bulk silicon
JP2013140989A5 (enExample)
JP2014527298A5 (enExample)
EP2230332A4 (en) SILICON CARBIDE MONOCRYSTALLINE INGOT, AND EPITAXIAL SUBSTRATE AND ROLL OBTAINED FROM MONOCRYSTALLINE SILICON CARBIDE INGOT
JP2011205089A5 (ja) 半導体膜の作製方法
JP2010062543A5 (ja) 半導体装置
JP2010242187A5 (enExample)
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2012071289A3 (en) Semiconductor inks, films and processes for preparing coated substrates and photovoltaic devices
JP2010519270A5 (enExample)
WO2010124059A3 (en) Crystalline thin-film photovoltaic structures and methods for forming the same
WO2011124409A3 (de) Verfahren zur herstellung einer solarzelle
JP2015181161A5 (ja) 酸化物半導体膜の作製方法
JP2012004275A5 (enExample)
FR2950633B1 (fr) Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur.
MY170292A (en) Chemical mechanical polishing composition comprising non-ionic surfactant and an aromatic compound comprising at least one acid group