JP2013540090A5 - - Google Patents

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JP2013540090A5
JP2013540090A5 JP2013529138A JP2013529138A JP2013540090A5 JP 2013540090 A5 JP2013540090 A5 JP 2013540090A5 JP 2013529138 A JP2013529138 A JP 2013529138A JP 2013529138 A JP2013529138 A JP 2013529138A JP 2013540090 A5 JP2013540090 A5 JP 2013540090A5
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Japan
Prior art keywords
substrate
etching
oxide layer
rate
growth
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JP2013529138A
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JP2013540090A (ja
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Priority claimed from PCT/US2011/028190 external-priority patent/WO2012036760A1/en
Publication of JP2013540090A publication Critical patent/JP2013540090A/ja
Publication of JP2013540090A5 publication Critical patent/JP2013540090A5/ja
Pending legal-status Critical Current

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Claims (1)

  1. 基板上の酸化物層の室温湿式化学成長のための組成物であって、
    １．基板をエッチングするためのフッ化物源と、
    ２．Ｉ、Ｖ、Ｃｏ、Ｐｂ及びＡｇからなる群から選択される１種以上の元素を含む無機還元酸化系であって、前記基板の表面における酸化反応を促進して、もって、該基板のエッチングから生じる消費された基板に少なくとも一部基づいて、該基板上の酸化物層を成長させる無機還元酸化系と、
    ３．前記基板のエッチングの第１の速度と、前記酸化物層の成長の第２の速度とのバランスを調整する非腐食性添加剤と、
    を含み、珪素を実質的に含まないことを特徴とする組成物。
JP2013529138A 2010-09-16 2011-03-11 高効率かつ低コストの結晶珪素太陽電池セルのための方法、プロセス、及び製造技術 Pending JP2013540090A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38343510P 2010-09-16 2010-09-16
US61/383,435 2010-09-16
PCT/US2011/028190 WO2012036760A1 (en) 2010-09-16 2011-03-11 Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells

Publications (2)

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JP2013540090A JP2013540090A (ja) 2013-10-31
JP2013540090A5 true JP2013540090A5 (ja) 2014-05-01

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JP2013529138A Pending JP2013540090A (ja) 2010-09-16 2011-03-11 高効率かつ低コストの結晶珪素太陽電池セルのための方法、プロセス、及び製造技術

Country Status (10)

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US (2) US9068112B2 (ja)
EP (1) EP2616401A4 (ja)
JP (1) JP2013540090A (ja)
KR (1) KR101836548B1 (ja)
AU (1) AU2011302575A1 (ja)
BR (1) BR112013006364A2 (ja)
MX (1) MX2013003007A (ja)
RU (1) RU2013117118A (ja)
TW (1) TW201228010A (ja)
WO (1) WO2012036760A1 (ja)

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