JP2010242187A5 - - Google Patents

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Publication number
JP2010242187A5
JP2010242187A5 JP2009093549A JP2009093549A JP2010242187A5 JP 2010242187 A5 JP2010242187 A5 JP 2010242187A5 JP 2009093549 A JP2009093549 A JP 2009093549A JP 2009093549 A JP2009093549 A JP 2009093549A JP 2010242187 A5 JP2010242187 A5 JP 2010242187A5
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JP
Japan
Prior art keywords
mno
oxide film
manganese oxide
layer
forming
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Application number
JP2009093549A
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English (en)
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JP5530118B2 (ja
JP2010242187A (ja
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Publication date
Priority claimed from JP2009093549A external-priority patent/JP5530118B2/ja
Priority to JP2009093549A priority Critical patent/JP5530118B2/ja
Application filed filed Critical
Priority to PCT/JP2010/054975 priority patent/WO2010116889A1/ja
Priority to KR1020117023503A priority patent/KR101358114B1/ko
Priority to CN2010800157385A priority patent/CN102388161A/zh
Publication of JP2010242187A publication Critical patent/JP2010242187A/ja
Priority to US13/267,227 priority patent/US8859421B2/en
Publication of JP2010242187A5 publication Critical patent/JP2010242187A5/ja
Publication of JP5530118B2 publication Critical patent/JP5530118B2/ja
Application granted granted Critical
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Claims (2)

  1. 前記酸化マンガン膜が、ＭｎＯの層、ＭｎＯとＳｉＯｘとの混合層、Ｍｎ（ＯＨ）２とＭｎＯとの混合層、及びＭｎ（ＯＨ）２の層の少なくともいずれか一つを含むことを特徴とする請求項１から請求項３のいずれか一項に記載の酸化マンガン膜の形成方法。
  2. 前記酸化マンガン膜の成膜法が、熱ＣＶＤ法であることを特徴とする請求項７から請求項９のいずれか一項に記載の半導体装置の製造方法。
JP2009093549A 2009-04-08 2009-04-08 酸化マンガン膜の形成方法、半導体装置の製造方法および半導体装置 Active JP5530118B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009093549A JP5530118B2 (ja) 2009-04-08 2009-04-08 酸化マンガン膜の形成方法、半導体装置の製造方法および半導体装置
PCT/JP2010/054975 WO2010116889A1 (ja) 2009-04-08 2010-03-23 酸化マンガン膜の形成方法、半導体装置の製造方法および半導体装置
KR1020117023503A KR101358114B1 (ko) 2009-04-08 2010-03-23 산화 망간막의 형성 방법, 반도체 장치의 제조 방법 및 반도체 장치
CN2010800157385A CN102388161A (zh) 2009-04-08 2010-03-23 氧化锰膜的形成方法、半导体装置的制造方法及半导体装置
US13/267,227 US8859421B2 (en) 2009-04-08 2011-10-06 Manganese oxide film forming method, semiconductor device manufacturing method and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009093549A JP5530118B2 (ja) 2009-04-08 2009-04-08 酸化マンガン膜の形成方法、半導体装置の製造方法および半導体装置

Publications (3)

Publication Number Publication Date
JP2010242187A JP2010242187A (ja) 2010-10-28
JP2010242187A5 true JP2010242187A5 (ja) 2012-02-16
JP5530118B2 JP5530118B2 (ja) 2014-06-25

Family

ID=42936175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009093549A Active JP5530118B2 (ja) 2009-04-08 2009-04-08 酸化マンガン膜の形成方法、半導体装置の製造方法および半導体装置

Country Status (5)

Country Link
US (1) US8859421B2 (ja)
JP (1) JP5530118B2 (ja)
KR (1) KR101358114B1 (ja)
CN (1) CN102388161A (ja)
WO (1) WO2010116889A1 (ja)

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US8653663B2 (en) 2009-10-29 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layer for copper interconnect
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US9076661B2 (en) 2012-04-13 2015-07-07 Applied Materials, Inc. Methods for manganese nitride integration
US9048294B2 (en) 2012-04-13 2015-06-02 Applied Materials, Inc. Methods for depositing manganese and manganese nitrides
US8969197B2 (en) * 2012-05-18 2015-03-03 International Business Machines Corporation Copper interconnect structure and its formation
JPWO2013191065A1 (ja) * 2012-06-18 2016-05-26 東京エレクトロン株式会社 マンガン含有膜の形成方法
JP6030439B2 (ja) * 2012-12-27 2016-11-24 東京エレクトロン株式会社 マンガン含有膜の形成方法、処理システム、および電子デバイスの製造方法
JP2014141739A (ja) 2012-12-27 2014-08-07 Tokyo Electron Ltd 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス
US9754258B2 (en) * 2013-06-17 2017-09-05 Visa International Service Association Speech transaction processing
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US10204829B1 (en) * 2018-01-12 2019-02-12 International Business Machines Corporation Low-resistivity metallic interconnect structures with self-forming diffusion barrier layers
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
US10991604B2 (en) * 2018-07-27 2021-04-27 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor structure
EP4288999A1 (en) * 2021-02-08 2023-12-13 MacDermid Enthone Inc. Method and wet chemical compositions for diffusion barrier formation

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EP0337329A3 (de) * 1988-04-12 1990-11-22 Siemens Aktiengesellschaft Verfahren zur Herstellung dünner Metallfilme durch Aufdampfen
US5487356A (en) * 1992-08-07 1996-01-30 Advanced Technology Materials, Inc. Chemical vapor deposition method of growing oxide films with giant magnetoresistance
KR102220703B1 (ko) * 2002-11-15 2021-02-26 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속 아미디네이트를 이용한 원자층 증착법
US6887523B2 (en) * 2002-12-20 2005-05-03 Sharp Laboratories Of America, Inc. Method for metal oxide thin film deposition via MOCVD
JP4086673B2 (ja) * 2003-02-04 2008-05-14 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
US20040170761A1 (en) * 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Precursor solution and method for controlling the composition of MOCVD deposited PCMO
JP4478038B2 (ja) * 2004-02-27 2010-06-09 株式会社半導体理工学研究センター 半導体装置及びその製造方法
US7132140B2 (en) * 2004-05-27 2006-11-07 Eastman Kodak Company Plural metallic layers in OLED donor
JP4236201B2 (ja) * 2005-08-30 2009-03-11 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2007220738A (ja) * 2006-02-14 2007-08-30 Sony Corp 半導体装置の製造方法
JP5014696B2 (ja) 2006-07-19 2012-08-29 株式会社アルバック 薄膜形成方法、銅配線膜形成方法
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