WO2012067439A3 - 다이아자다이엔계 금속 화합물, 이의 제조 방법 및 이를 이용한 박막 형성 방법 - Google Patents

다이아자다이엔계 금속 화합물, 이의 제조 방법 및 이를 이용한 박막 형성 방법 Download PDF

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WO2012067439A3
WO2012067439A3 PCT/KR2011/008791 KR2011008791W WO2012067439A3 WO 2012067439 A3 WO2012067439 A3 WO 2012067439A3 KR 2011008791 W KR2011008791 W KR 2011008791W WO 2012067439 A3 WO2012067439 A3 WO 2012067439A3
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thin film
same
diazadiene
metal compound
forming
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WO2012067439A2 (ko
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한원석
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주식회사 유피케미칼
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Priority to CN201180055167.2A priority Critical patent/CN103298971B/zh
Priority to US13/885,740 priority patent/US9353437B2/en
Priority to JP2013539761A priority patent/JP5779823B2/ja
Publication of WO2012067439A2 publication Critical patent/WO2012067439A2/ko
Publication of WO2012067439A3 publication Critical patent/WO2012067439A3/ko

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    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
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    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
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    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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Abstract

본원은 다이아자다이엔(diazadiene, DAD계 금속 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법에 관한 것으로서, 본원의 다이아자다이엔계 금속 화합물을 기체 상태로 공급하여 화학 기상 증착법 또는 원자층 증착법으로 금속 박막, 금속 산화물 박막을 형성할 수 있다. 특히 본원에 따른 다이아자다이엔 계 유기금속 화합물은 금속 및 금속 산화물 박막을 형성하는 것이 가능할 뿐 아니라, 독성이 강한 리간드를 사용하지 않고 비교적 저렴한 비용으로 제조할 수 있는 장점이 있다.
PCT/KR2011/008791 2010-11-17 2011-11-17 다이아자다이엔계 금속 화합물, 이의 제조 방법 및 이를 이용한 박막 형성 방법 WO2012067439A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180055167.2A CN103298971B (zh) 2010-11-17 2011-11-17 基于二氮杂二烯的金属化合物、其生产方法和使用其形成薄膜的方法
US13/885,740 US9353437B2 (en) 2010-11-17 2011-11-17 Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
JP2013539761A JP5779823B2 (ja) 2010-11-17 2011-11-17 ジアザジエン系金属化合物、これの製造方法及びこれを利用した薄膜形成方法

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Application Number Priority Date Filing Date Title
KR10-2010-0114515 2010-11-17
KR20100114515 2010-11-17

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WO2012067439A2 WO2012067439A2 (ko) 2012-05-24
WO2012067439A3 true WO2012067439A3 (ko) 2012-07-12

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US (1) US9353437B2 (ko)
JP (1) JP5779823B2 (ko)
KR (1) KR101719526B1 (ko)
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WO (1) WO2012067439A2 (ko)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
WO2010132871A1 (en) 2009-05-15 2010-11-18 Wayne State University Thermally stable volatile film precursors
US9255327B2 (en) 2010-08-24 2016-02-09 Wayne State University Thermally stable volatile precursors
US9822446B2 (en) 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
KR20140085461A (ko) * 2011-09-27 2014-07-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 니켈 비스 디아자부타디엔 전구체, 그들의 합성, 및 니켈 함유 필름 침착을 위한 그들의 용도
WO2014052316A1 (en) 2012-09-25 2014-04-03 Advanced Technology Materials, Inc. Cobalt precursors for low temperature ald or cvd of cobalt-based thin films
US8907115B2 (en) 2012-12-10 2014-12-09 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
TWI615497B (zh) * 2013-02-28 2018-02-21 應用材料股份有限公司 金屬胺化物沉積前驅物及具有惰性安瓿襯裡之該前驅物的穩定化
TWI577824B (zh) * 2013-06-06 2017-04-11 應用材料股份有限公司 使用二氮丁二烯基前驅物沉積含錳膜之方法
US9157149B2 (en) 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
US9249505B2 (en) 2013-06-28 2016-02-02 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
US9067958B2 (en) * 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US10364492B2 (en) * 2013-10-28 2019-07-30 Applied Materials, Inc. Film deposition using precursors containing amidoimine ligands
WO2015065823A1 (en) * 2013-10-28 2015-05-07 Sigma-Aldrich Co. Llc Metal complexes containing amidoimine ligands
KR101936162B1 (ko) 2014-06-13 2019-01-08 주식회사 유피케미칼 액체 전구체 조성물, 이의 제조 방법, 및 상기 조성물을 이용한 막의 형성 방법
US11476158B2 (en) * 2014-09-14 2022-10-18 Entegris, Inc. Cobalt deposition selectivity on copper and dielectrics
JP6465699B2 (ja) * 2015-03-06 2019-02-06 株式会社Adeka ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物
JP6675159B2 (ja) * 2015-06-17 2020-04-01 株式会社Adeka 新規な化合物、薄膜形成用原料及び薄膜の製造方法
TWI736631B (zh) 2016-06-06 2021-08-21 韋恩州立大學 二氮雜二烯錯合物與胺類的反應
JP6735163B2 (ja) * 2016-06-22 2020-08-05 株式会社Adeka バナジウム化合物、薄膜形成用原料及び薄膜の製造方法
JP2018035072A (ja) 2016-08-29 2018-03-08 株式会社Adeka ジアザジエニル化合物、薄膜形成用原料及び薄膜の製造方法
IL266365B2 (en) 2016-11-08 2023-12-01 Adeka Corp Compound, raw material for forming a thin layer, method for producing a thin layer and amidine compound
US10752649B2 (en) 2017-04-07 2020-08-25 Applied Materials, Inc. Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use
WO2019017285A1 (ja) * 2017-07-18 2019-01-24 株式会社高純度化学研究所 金属薄膜の原子層堆積方法
KR101962355B1 (ko) 2017-09-26 2019-03-26 주식회사 한솔케미칼 열적 안정성 및 반응성이 우수한 기상 증착 전구체 및 이의 제조방법
EP3728688B1 (en) * 2017-12-20 2021-11-10 Basf Se Process for the generation of metal-containing films
US11440929B2 (en) * 2018-06-19 2022-09-13 Versum Materials Us, Llc Bis(diazadiene)cobalt compounds, method of making and method of use thereof
TW202010746A (zh) * 2018-06-30 2020-03-16 美商應用材料股份有限公司 含錫之前驅物及沉積含錫薄膜之方法
KR102123331B1 (ko) * 2018-12-19 2020-06-17 주식회사 한솔케미칼 코발트 전구체, 이의 제조방법 및 이를 이용한 박막의 제조방법
US11854876B2 (en) 2019-12-20 2023-12-26 Asm Ip Holding B.V. Systems and methods for cobalt metalization
KR102432833B1 (ko) 2020-07-29 2022-08-18 주식회사 한솔케미칼 유기금속 화합물, 이를 포함하는 전구체 조성물, 및 이를 이용한 박막의 제조방법
TW202235654A (zh) * 2021-02-16 2022-09-16 美商應用材料股份有限公司 用於原子層沉積之還原劑
JPWO2023286589A1 (ko) 2021-07-12 2023-01-19

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874131A (en) * 1996-10-02 1999-02-23 Micron Technology, Inc. CVD method for forming metal-containing films

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100298125B1 (ko) * 1999-04-15 2001-09-13 정명식 구리의 화학 증착에 유용한 유기 구리 전구체
DE102006000823A1 (de) 2006-01-05 2007-07-12 H. C. Starck Gmbh & Co. Kg Wolfram- und Molybdän-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
KR20100061183A (ko) * 2008-11-28 2010-06-07 주식회사 유피케미칼 코발트 금속 박막 또는 코발트 함유 세라믹 박막 증착용 유기 금속 전구체 화합물 및 이를 이용한 박막 제조 방법
KR101120065B1 (ko) * 2009-01-08 2012-03-23 솔브레인 주식회사 신규의 아미딘 유도체를 가지는 게르마늄 화합물 및 이의 제조 방법
US9255327B2 (en) * 2010-08-24 2016-02-09 Wayne State University Thermally stable volatile precursors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874131A (en) * 1996-10-02 1999-02-23 Micron Technology, Inc. CVD method for forming metal-containing films

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BAKER, R. J. ET AL.: "An EPR and ENDOR Investigation of a Series of Diazabutadiene- Group 13 Complexes", CHEM. EUR. J., vol. 11, no. 10, 6 May 2005 (2005-05-06), pages 2972 - 2982 *
KIRCHMANN, M. ET AL.: "Octahedral Coordination Compounds of the Ni, Pd, Pt Triad", ANGEW. CHEM. INT. ED., vol. 47, no. 5, 20 December 2007 (2007-12-20), pages 963 - 966 *
SCHAUB, T. ET AL.: "A Diazabutadiene stabilized Nickel(0) Cyclooctadiene Comlex: Synthesis, Characterization and the Reaction with Diphenylacetylene", Z. ANORG. ALLG. CHEM., vol. 632, no. 5, 30 March 2006 (2006-03-30), pages 807 - 813 *
TROMP. D. S. ET AL.: "Synthesis of new (a2-N,N' -diazadiene)(q2-alkene) platinum(0) compounds", INORGANICA CHIMICA ACTA, vol. 327, no. 1, 8 December 2001 (2001-12-08), pages 90 - 97 *

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US20130251903A1 (en) 2013-09-26
CN103298971A (zh) 2013-09-11
KR101719526B1 (ko) 2017-04-04
KR20120053479A (ko) 2012-05-25
JP2013545755A (ja) 2013-12-26
CN103298971B (zh) 2015-07-08
JP5779823B2 (ja) 2015-09-16
WO2012067439A2 (ko) 2012-05-24
US9353437B2 (en) 2016-05-31

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