JP2008504715A5 - - Google Patents

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JP2008504715A5
JP2008504715A5 JP2007519306A JP2007519306A JP2008504715A5 JP 2008504715 A5 JP2008504715 A5 JP 2008504715A5 JP 2007519306 A JP2007519306 A JP 2007519306A JP 2007519306 A JP2007519306 A JP 2007519306A JP 2008504715 A5 JP2008504715 A5 JP 2008504715A5
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silicon nitride
material layer
upper layer
substrate
nitride
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JP2007519306A
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Japanese (ja)
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JP2008504715A (ja
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Priority claimed from US10/879,703 external-priority patent/US7339205B2/en
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Publication of JP2008504715A5 publication Critical patent/JP2008504715A5/ja
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JP2007519306A 2004-06-28 2005-06-24 窒化ガリウム材料及び方法 Pending JP2008504715A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/879,703 US7339205B2 (en) 2004-06-28 2004-06-28 Gallium nitride materials and methods associated with the same
PCT/US2005/022488 WO2006012298A1 (en) 2004-06-28 2005-06-24 Gallium nitride material and methods associated with the same

Publications (2)

Publication Number Publication Date
JP2008504715A JP2008504715A (ja) 2008-02-14
JP2008504715A5 true JP2008504715A5 (enExample) 2008-08-07

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JP2007519306A Pending JP2008504715A (ja) 2004-06-28 2005-06-24 窒化ガリウム材料及び方法

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US (4) US7339205B2 (enExample)
EP (2) EP1769529A1 (enExample)
JP (1) JP2008504715A (enExample)
WO (1) WO2006012298A1 (enExample)

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