JP2008504715A - 窒化ガリウム材料及び方法 - Google Patents

窒化ガリウム材料及び方法 Download PDF

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Publication number
JP2008504715A
JP2008504715A JP2007519306A JP2007519306A JP2008504715A JP 2008504715 A JP2008504715 A JP 2008504715A JP 2007519306 A JP2007519306 A JP 2007519306A JP 2007519306 A JP2007519306 A JP 2007519306A JP 2008504715 A JP2008504715 A JP 2008504715A
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layer
substrate
nitride
silicon
gallium nitride
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JP2008504715A5 (enExample
Inventor
ラニア ピナー、エドウィン
クラーセン ロバーツ、ジョン
ラジャゴパル、プラディープ
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ニトロネックス コーポレイション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2007519306A 2004-06-28 2005-06-24 窒化ガリウム材料及び方法 Pending JP2008504715A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/879,703 US7339205B2 (en) 2004-06-28 2004-06-28 Gallium nitride materials and methods associated with the same
PCT/US2005/022488 WO2006012298A1 (en) 2004-06-28 2005-06-24 Gallium nitride material and methods associated with the same

Publications (2)

Publication Number Publication Date
JP2008504715A true JP2008504715A (ja) 2008-02-14
JP2008504715A5 JP2008504715A5 (enExample) 2008-08-07

Family

ID=35033763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007519306A Pending JP2008504715A (ja) 2004-06-28 2005-06-24 窒化ガリウム材料及び方法

Country Status (4)

Country Link
US (4) US7339205B2 (enExample)
EP (2) EP1769529A1 (enExample)
JP (1) JP2008504715A (enExample)
WO (1) WO2006012298A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012191202A (ja) * 2011-03-03 2012-10-04 Internatl Rectifier Corp 歪吸収中間層遷移モジュールを有するｉｉｉ族窒化物半導体構造
JP2014072428A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体結晶基板の製造方法、半導体装置の製造方法、半導体結晶基板及び半導体装置
US8803274B2 (en) 2009-07-15 2014-08-12 Sumitomo Electric Industries, Ltd. Nitride-based semiconductor light-emitting element
JP2016167501A (ja) * 2015-03-09 2016-09-15 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2017147464A (ja) * 2010-05-07 2017-08-24 住友化学株式会社 半導体基板
WO2021079745A1 (ja) * 2019-10-24 2021-04-29 信越半導体株式会社 半導体基板の製造方法及び半導体基板

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
JP4869564B2 (ja) * 2003-11-28 2012-02-08 新日本無線株式会社 窒化物半導体装置及びその製造方法
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
WO2006050403A2 (en) * 2004-10-28 2006-05-11 Nitronex Corporation Gallium nitride/silicon based monolithic microwave integrated circuit
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
US8946674B2 (en) * 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
KR20080072833A (ko) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법
WO2007062250A2 (en) 2005-11-28 2007-05-31 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
US9608102B2 (en) * 2005-12-02 2017-03-28 Infineon Technologies Americas Corp. Gallium nitride material devices and associated methods
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
WO2007123735A1 (en) 2006-03-30 2007-11-01 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP1883103A3 (en) * 2006-07-27 2008-03-05 Interuniversitair Microelektronica Centrum Deposition of group III-nitrides on Ge
US20080035143A1 (en) * 2006-08-14 2008-02-14 Sievers Robert E Human-powered dry powder inhaler and dry powder inhaler compositions
US8513643B2 (en) 2006-09-06 2013-08-20 Palo Alto Research Center Incorporated Mixed alloy defect redirection region and devices including same
US20080054248A1 (en) * 2006-09-06 2008-03-06 Chua Christopher L Variable period variable composition supperlattice and devices including same
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN101652832B (zh) 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
KR101330251B1 (ko) * 2007-03-06 2013-11-15 서울바이오시스 주식회사 패터닝된 기판 상에 질화물 반도체층을 형성하는 방법 및그것을 갖는 발광 다이오드
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7795070B2 (en) * 2007-03-30 2010-09-14 Texas Instruments Incorporated Semiconductor device including an amorphous nitrided silicon adhesion layer and method of manufacture therefor
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
KR100901822B1 (ko) 2007-09-11 2009-06-09 주식회사 실트론 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
US8343824B2 (en) 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
WO2011016219A1 (ja) * 2009-08-04 2011-02-10 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
DE102009047881B4 (de) * 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
US8648387B2 (en) * 2009-12-30 2014-02-11 Industrial Technology Research Institute Nitride semiconductor template and method of manufacturing the same
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
KR20120032329A (ko) 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
US20120274366A1 (en) 2011-04-28 2012-11-01 International Rectifier Corporation Integrated Power Stage
US8853706B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with stamped leadframe
US8853707B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with etched leadframe
US8546849B2 (en) 2011-05-04 2013-10-01 International Rectifier Corporation High voltage cascoded III-nitride rectifier package utilizing clips on package surface
FR2977260B1 (fr) 2011-06-30 2013-07-19 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
US9281388B2 (en) 2011-07-15 2016-03-08 Infineon Technologies Americas Corp. Composite semiconductor device with a SOI substrate having an integrated diode
US9087812B2 (en) 2011-07-15 2015-07-21 International Rectifier Corporation Composite semiconductor device with integrated diode
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US20140070627A1 (en) 2012-09-07 2014-03-13 International Rectifier Corporation Integrated Group III-V Power Stage
CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触
US9184243B2 (en) 2013-07-12 2015-11-10 Infineon Technologies Americas Corp. Monolithic composite III-nitride transistor with high voltage group IV enable switch
TWI574407B (zh) * 2013-08-16 2017-03-11 晶元光電股份有限公司 半導體功率元件
US20150115327A1 (en) 2013-10-30 2015-04-30 International Rectifier Corporation Group III-V Device Including a Buffer Termination Body
US9673286B2 (en) 2013-12-02 2017-06-06 Infineon Technologies Americas Corp. Group III-V transistor with semiconductor field plate
US9343562B2 (en) 2013-12-06 2016-05-17 Infineon Technologies Americas Corp. Dual-gated group III-V merged transistor
US9478708B2 (en) 2015-03-11 2016-10-25 International Business Machines Corporation Embedded gallium—nitride in silicon
US10636899B2 (en) 2016-11-15 2020-04-28 Infineon Technologies Austria Ag High electron mobility transistor with graded back-barrier region
CN107731916B (zh) * 2017-10-12 2024-02-13 中国电子科技集团公司第十三研究所 半导体器件及利用异质结形成金刚石n型导电沟道的方法
CN112750904B (zh) 2019-10-30 2024-01-02 联华电子股份有限公司 具有应力松弛层的半导体元件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864913A (ja) 1994-08-26 1996-03-08 Rohm Co Ltd 半導体発光素子およびその製法
JPH11265853A (ja) * 1998-01-16 1999-09-28 Mitsubishi Materials Corp 窒化物半導体層付き基板及びその製造方法

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768038A (en) * 1985-05-17 1988-08-30 Konishiroku Photo Industry Co., Ltd. Thermal printhead integrated circuit device
EP0307108A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method of forming crystal
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
EP0749638B1 (en) * 1994-12-22 1999-06-16 Koninklijke Philips Electronics N.V. Semiconductor memory devices and methods of producing such
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
WO1996041906A1 (en) 1995-06-13 1996-12-27 Advanced Technology Materials, Inc. Bulk single crystal gallium nitride and method of making same
JP2795226B2 (ja) * 1995-07-27 1998-09-10 日本電気株式会社 半導体発光素子及びその製造方法
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JP3396356B2 (ja) * 1995-12-11 2003-04-14 三菱電機株式会社 半導体装置，及びその製造方法
JP3409958B2 (ja) * 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5929467A (en) * 1996-12-04 1999-07-27 Sony Corporation Field effect transistor with nitride compound
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US5869384A (en) * 1997-03-17 1999-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Trench filling method employing silicon liner layer and gap filling silicon oxide trench fill layer
KR19980079320A (ko) * 1997-03-24 1998-11-25 기다오까다까시 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스
JP3491492B2 (ja) * 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6261931B1 (en) * 1997-06-20 2001-07-17 The Regents Of The University Of California High quality, semi-insulating gallium nitride and method and system for forming same
US6146457A (en) * 1997-07-03 2000-11-14 Cbl Technologies, Inc. Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3517867B2 (ja) * 1997-10-10 2004-04-12 豊田合成株式会社 ＧａＮ系の半導体素子
US7118929B2 (en) * 2000-07-07 2006-10-10 Lumilog Process for producing an epitaxial layer of gallium nitride
JP3036495B2 (ja) * 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
US6017791A (en) * 1997-11-10 2000-01-25 Taiwan Semiconductor Manufacturing Company Multi-layer silicon nitride deposition method for forming low oxidation temperature thermally oxidized silicon nitride/silicon oxide (no) layer
GB9726094D0 (en) * 1997-12-10 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
US6064078A (en) * 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6218207B1 (en) * 1998-05-29 2001-04-17 Mitsushita Electronics Corporation Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
SG94712A1 (en) * 1998-09-15 2003-03-18 Univ Singapore Method of fabricating group-iii nitride-based semiconductor device
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6329063B2 (en) * 1998-12-11 2001-12-11 Nova Crystals, Inc. Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
US6328796B1 (en) * 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
US20010042503A1 (en) * 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
US6259133B1 (en) * 1999-02-11 2001-07-10 Advanced Micro Devices, Inc. Method for forming an integrated circuit memory cell and product thereof
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
US6176925B1 (en) * 1999-05-07 2001-01-23 Cbl Technologies, Inc. Detached and inverted epitaxial regrowth & methods
EP1209729A1 (en) 1999-07-07 2002-05-29 Matsushita Electric Industrial Co., Ltd. Multilayered body, method for fabricating multilayered body, and semiconductor device
TW474024B (en) 1999-08-16 2002-01-21 Cornell Res Foundation Inc Passivation of GaN based FETs
US6441393B2 (en) * 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6291319B1 (en) * 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6475882B1 (en) * 1999-12-20 2002-11-05 Nitride Semiconductors Co., Ltd. Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
US6380108B1 (en) * 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US6498111B1 (en) * 2000-08-23 2002-12-24 Cree Lighting Company Fabrication of semiconductor materials and devices with controlled electrical conductivity
AU2001274810A1 (en) * 2000-04-17 2001-10-30 Virginia Commonwealth University Defect reduction in gan and related materials
FR2810159B1 (fr) * 2000-06-09 2005-04-08 Centre Nat Rech Scient Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche
US6645873B2 (en) * 2000-06-21 2003-11-11 Asm Japan K.K. Method for manufacturing a semiconductor device
JP4186032B2 (ja) * 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
US6610144B2 (en) * 2000-07-21 2003-08-26 The Regents Of The University Of California Method to reduce the dislocation density in group III-nitride films
US6624452B2 (en) * 2000-07-28 2003-09-23 The Regents Of The University Of California Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET
AU2001279163A1 (en) * 2000-08-04 2002-02-18 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
JP2002076023A (ja) * 2000-09-01 2002-03-15 Nec Corp 半導体装置
US6391748B1 (en) * 2000-10-03 2002-05-21 Texas Tech University Method of epitaxial growth of high quality nitride layers on silicon substrates
US6583034B2 (en) * 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
US6461944B2 (en) * 2001-02-07 2002-10-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Methods for growth of relatively large step-free SiC crystal surfaces
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
PL219109B1 (pl) * 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
US6841409B2 (en) * 2002-01-17 2005-01-11 Matsushita Electric Industrial Co., Ltd. Group III-V compound semiconductor and group III-V compound semiconductor device using the same
US20040104384A1 (en) * 2002-04-22 2004-06-03 Moustakas Theodore D. Growth of high temperature, high power, high speed electronics
US6921699B2 (en) 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
US6991972B2 (en) * 2002-10-22 2006-01-31 Amberwave Systems Corporation Gate material for semiconductor device fabrication
EP1437764A1 (en) 2003-01-10 2004-07-14 S.O.I. Tec Silicon on Insulator Technologies S.A. A compliant substrate for a heteroepitaxy, a heteroepitaxial structure and a method for fabricating a compliant substrate
US7017498B2 (en) 2003-06-25 2006-03-28 Asf-Keystone, Inc. Multi-purpose universal sideframe for railway trucks
US7135720B2 (en) * 2003-08-05 2006-11-14 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
TWI240430B (en) * 2003-10-20 2005-09-21 United Epitaxy Co Ltd Group III nitrides semiconductor device and manufacturing process
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
EP1548807B1 (en) 2003-12-22 2018-08-22 IMEC vzw Method for depositing a group III-nitride material on a silicon substrate and device thereof
US7154163B2 (en) * 2004-05-05 2006-12-26 Supernova Optoelectronics Corp. Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers
US7135750B1 (en) 2004-06-02 2006-11-14 Polar Semiconductor, Inc. Photodiode array having reduced dead space
US7522938B2 (en) * 2004-06-18 2009-04-21 Panasonic Corporation Portable information terminal apparatus
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
US7247889B2 (en) * 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864913A (ja) 1994-08-26 1996-03-08 Rohm Co Ltd 半導体発光素子およびその製法
JPH11265853A (ja) * 1998-01-16 1999-09-28 Mitsubishi Materials Corp 窒化物半導体層付き基板及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN7011004238; Ｓ． Ｋａｉｓｅｒ: 'Ｓｔｒｕｃｔｕｒａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆ ＡｌＧａＮＯＧａＮ ｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅｓ ｏｎ Ｓｉ．１１１． ｓｕｂｓｔｒａｔｅｓｓｕｉｔａｂｌｅ ｆｏｒ ｈｉｇｈ-ｅｌｅｃｔｒｏｎ' Ｊ． Ｖａｃ． Ｓｃｉ． Ｔｅｃｈｎｏｌ． Ｂ Ｖｏｌ．１８ Ｎｏ．２, 200004, ７３３-７４０, Ａｍｅｒｉｃａｎ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803274B2 (en) 2009-07-15 2014-08-12 Sumitomo Electric Industries, Ltd. Nitride-based semiconductor light-emitting element
JP2017147464A (ja) * 2010-05-07 2017-08-24 住友化学株式会社 半導体基板
JP2012191202A (ja) * 2011-03-03 2012-10-04 Internatl Rectifier Corp 歪吸収中間層遷移モジュールを有するｉｉｉ族窒化物半導体構造
JP2014072428A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体結晶基板の製造方法、半導体装置の製造方法、半導体結晶基板及び半導体装置
JP2016167501A (ja) * 2015-03-09 2016-09-15 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
WO2021079745A1 (ja) * 2019-10-24 2021-04-29 信越半導体株式会社 半導体基板の製造方法及び半導体基板
JP2021072441A (ja) * 2019-10-24 2021-05-06 信越半導体株式会社 半導体基板の製造方法及び半導体基板
JP7224325B2 (ja) 2019-10-24 2023-02-17 信越半導体株式会社 半導体基板の製造方法及び半導体基板

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