JP2022182954A - Iii-n系半導体構造物及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 23
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 54
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005336 cracking Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
Description
110…基板
120…シード層
130、230…超格子構造層
131、231、231’、231”…第1層
132、232、232’、232”…第2層
135、235、235’、235”…超格子ユニット
140…キャップ層
Claims (16)
- III-N系半導体構造物において、
シリコン物質を含む基板、
前記基板上に形成されたものであって、窒化アルミニウム(AlN)物質を含むシード層、
前記シード層上に形成されたものであって、複数の超格子ユニットが順に積層された超格子(superlattice)構造層、及び
前記超格子構造層上に形成されたものであって、窒化ガリウム(GaN)物質を含むキャップ(cap)層を含み、
前記超格子ユニットは0≦x≦1であるAlxGa1-xN物質で構成された第1層、及び、0<y≦0.4であるInyAl1-yN物質で構成された第2層を含む、III-N系半導体構造物。 - 請求項1において、
前記超格子ユニットの厚さは、30nm以下である、III-N系半導体構造物。 - 請求項1において、
前記超格子構造層の平均格子定数は、前記シード層の格子定数と前記キャップ層の格子定数との間の値を有する、III-N系半導体構造物。 - 請求項3において、
前記シード層上に順に積層された前記複数の超格子ユニットにおいて、前記超格子ユニットの格子定数は、前記シード層から遠くなるほど大きい値を有する、III-N系半導体構造物。 - 請求項1において、
前記超格子構造層のバンドギャップエネルギー(bandgap energy)は、前記キャップ層のバンドギャップエネルギーより大きい値を有する、III-N系半導体構造物。 - 請求項1において、
前記超格子構造層は、50個~400個の超格子ユニットを含む、III-N系半導体構造物。 - 請求項1において、
前記超格子ユニットにおいて、前記第1層に対する前記第2層の厚さの比率は1:10~10:1である、III-N系半導体構造物。 - 請求項1において、
前記シード層、前記超格子構造層及び前記キャップ層は、分子ビームエピタキシ(Molecular Beam Epitaxy、MBE)または金属有機化学気相蒸着(Metal Organic Chemical Vapor Deposition、MOCVD)により成長する、III-N系半導体構造物。 - III-N系半導体構造物を製造する方法において、
シリコン物質を含む基板を準備する段階、
前記基板上に窒化アルミニウム(AlN)物質を含むシード層を形成する段階、
前記シード層上に複数の超格子ユニットが順に積層された超格子構造層を形成する段階、及び
前記超格子構造層上に窒化ガリウム(GaN)物質を成長させてキャップ(cap)層を形成する段階を含み、
前記超格子ユニットは、0≦x≦1であるAlxGa1-xN物質で構成された第1層、及び、0<y≦0.4であるInyAl1-yN物質で構成された第2層を含む、III-N系半導体構造物の製造方法。 - 請求項9において、
前記超格子構造層を形成する段階において、前記超格子ユニットの厚さは30nm以下になるようにする、III-N系半導体構造物の製造方法。 - 請求項9において、
前記超格子構造層を形成する段階において、前記超格子構造層の平均格子定数は、前記シード層の格子定数と前記キャップ層の格子定数との間の値を有するように調節される、III-N系半導体構造物の製造方法。 - 請求項11において、
前記超格子構造層を形成する段階において、前記超格子ユニットの格子定数は、前記シード層から遠くなるほど大きい値を有するように調節される、III-N系半導体構造物の製造方法。 - 請求項9において、
前記超格子構造層を形成する段階において、前記超格子構造層のバンドギャップエネルギー(bandgap energy)は、前記キャップ層のバンドギャップエネルギーより大きい値を有するように調節される、III-N系半導体構造物の製造方法。 - 請求項9において、
前記超格子構造層を形成する段階において、前記超格子構造層は、少なくとも50個以上の超格子ユニットが積層される、III-N系半導体構造物の製造方法。 - 請求項9において、
前記超格子構造層を形成する段階において、前記第1層に対する前記第2層の厚さの比率は1:10~10:1になるように調節される、III-N系半導体構造物の製造方法。 - 請求項9において、
前記シード層、前記超格子構造層及び前記キャップ層は、分子ビームエピタキシ(Molecular Beam Epitaxy、MBE)または金属有機化学気相蒸着(Metal Organic Chemical Vapor Deposition、MOCVD)により成長する、III-N系半導体構造物の製造方法。
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JP2007250991A (ja) * | 2006-03-17 | 2007-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 超格子構造を含む半導体構造および該半導体構造を備える半導体デバイス |
JP2016167472A (ja) * | 2013-07-09 | 2016-09-15 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハおよび電界効果トランジスタ |
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JP4530171B2 (ja) * | 2003-08-08 | 2010-08-25 | サンケン電気株式会社 | 半導体装置 |
JP4449467B2 (ja) * | 2004-01-28 | 2010-04-14 | サンケン電気株式会社 | 半導体装置 |
WO2007103419A2 (en) * | 2006-03-06 | 2007-09-13 | The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University | Structures and designs for improved efficiency and reduced strain iii-nitride heterostructure semiconductor devices |
KR20130141290A (ko) * | 2012-06-15 | 2013-12-26 | 삼성전자주식회사 | 초격자 구조체 및 이를 포함한 반도체 소자 |
US20160359004A1 (en) * | 2015-06-03 | 2016-12-08 | Veeco Instruments, Inc. | Stress control for heteroepitaxy |
CN111490100B (zh) * | 2020-04-16 | 2024-04-05 | 英诺赛科(珠海)科技有限公司 | 半导体装置及其制造方法 |
TWI727773B (zh) * | 2020-04-29 | 2021-05-11 | 合晶科技股份有限公司 | 複合基板及其製造方法 |
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JP2007250991A (ja) * | 2006-03-17 | 2007-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 超格子構造を含む半導体構造および該半導体構造を備える半導体デバイス |
JP2016167472A (ja) * | 2013-07-09 | 2016-09-15 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハおよび電界効果トランジスタ |
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