JP2003257854A5 - - Google Patents

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Publication number
JP2003257854A5
JP2003257854A5 JP2002050605A JP2002050605A JP2003257854A5 JP 2003257854 A5 JP2003257854 A5 JP 2003257854A5 JP 2002050605 A JP2002050605 A JP 2002050605A JP 2002050605 A JP2002050605 A JP 2002050605A JP 2003257854 A5 JP2003257854 A5 JP 2003257854A5
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JP
Japan
Prior art keywords
gan
compound semiconductor
based compound
semiconductor crystal
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002050605A
Other languages
English (en)
Japanese (ja)
Other versions
JP4150527B2 (ja
JP2003257854A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002050605A external-priority patent/JP4150527B2/ja
Priority to JP2002050605A priority Critical patent/JP4150527B2/ja
Priority to CNB028283880A priority patent/CN1327483C/zh
Priority to KR1020047013374A priority patent/KR100953404B1/ko
Priority to EP02775533A priority patent/EP1480260A4/en
Priority to PCT/JP2002/011771 priority patent/WO2003073484A1/ja
Priority to CA002475966A priority patent/CA2475966C/en
Priority to US10/504,527 priority patent/US7256110B2/en
Publication of JP2003257854A publication Critical patent/JP2003257854A/ja
Publication of JP2003257854A5 publication Critical patent/JP2003257854A5/ja
Publication of JP4150527B2 publication Critical patent/JP4150527B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002050605A 2002-02-27 2002-02-27 結晶の製造方法 Expired - Fee Related JP4150527B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002050605A JP4150527B2 (ja) 2002-02-27 2002-02-27 結晶の製造方法
PCT/JP2002/011771 WO2003073484A1 (en) 2002-02-27 2002-11-12 Crystal manufacturing method
KR1020047013374A KR100953404B1 (ko) 2002-02-27 2002-11-12 결정의 제조 방법
EP02775533A EP1480260A4 (en) 2002-02-27 2002-11-12 Crystal manufacturing method
CNB028283880A CN1327483C (zh) 2002-02-27 2002-11-12 晶体的制造方法
CA002475966A CA2475966C (en) 2002-02-27 2002-11-12 Crystal production method
US10/504,527 US7256110B2 (en) 2002-02-27 2002-11-12 Crystal manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002050605A JP4150527B2 (ja) 2002-02-27 2002-02-27 結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2003257854A JP2003257854A (ja) 2003-09-12
JP2003257854A5 true JP2003257854A5 (enExample) 2005-03-17
JP4150527B2 JP4150527B2 (ja) 2008-09-17

Family

ID=27764284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002050605A Expired - Fee Related JP4150527B2 (ja) 2002-02-27 2002-02-27 結晶の製造方法

Country Status (7)

Country Link
US (1) US7256110B2 (enExample)
EP (1) EP1480260A4 (enExample)
JP (1) JP4150527B2 (enExample)
KR (1) KR100953404B1 (enExample)
CN (1) CN1327483C (enExample)
CA (1) CA2475966C (enExample)
WO (1) WO2003073484A1 (enExample)

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KR100525545B1 (ko) 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100665591B1 (ko) * 2004-05-07 2007-01-09 슈퍼노바 옵토일렉트로닉스 코포레이션 질화갈륨계 화합물 반도체의 결정 에피택시 구조 및 그제조 방법
CN100336942C (zh) * 2004-06-02 2007-09-12 中国科学院半导体研究所 生长高结晶质量氮化铟单晶外延膜的方法
DE102004048453A1 (de) * 2004-10-05 2006-04-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze
JP2006237556A (ja) * 2005-01-31 2006-09-07 Kanagawa Acad Of Sci & Technol ＧａＮ膜生成方法及び半導体素子並びにＩＩＩ族窒化物の薄膜生成方法及びＩＩＩ族窒化物の薄膜を有する半導体素子
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US20110175126A1 (en) * 2010-01-15 2011-07-21 Hung-Chih Yang Light-emitting diode structure
CN102245814A (zh) * 2010-02-01 2011-11-16 吉坤日矿日石金属株式会社 氮化物系化合物半导体基板的制造方法及氮化物系化合物半导体自支撑基板
WO2011111647A1 (ja) * 2010-03-08 2011-09-15 Jx日鉱日石金属株式会社 窒化物系化合物半導体基板の製造方法、窒化物系化合物半導体基板及び窒化物系化合物半導体自立基板
JP2011184226A (ja) * 2010-03-08 2011-09-22 Jx Nippon Mining & Metals Corp エピタキシャル成長用基板、窒化物系化合物半導体基板及び窒化物系化合物半導体自立基板
KR101270428B1 (ko) * 2011-06-20 2013-06-03 삼성코닝정밀소재 주식회사 질화갈륨 기판 및 그 제조방법
KR102341263B1 (ko) * 2013-06-04 2021-12-22 삼성전자주식회사 저결함 반도체 소자 및 그 제조 방법
CN106435720A (zh) * 2016-09-22 2017-02-22 东莞市联洲知识产权运营管理有限公司 一种GaN薄膜材料的制备方法
EP3546622A4 (en) * 2016-11-25 2019-12-04 Osaka University NITRIDE SUBSTRATE SUBSTRATE, MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT
KR102110409B1 (ko) * 2018-10-25 2020-05-13 한국세라믹기술원 HVPE 성장법을 이용하여 펄스 모드로 성장된 α-Ga2O3 박막의 제조 방법
KR102138334B1 (ko) * 2018-10-25 2020-07-27 한국세라믹기술원 스텝업 전처리 방식을 이용한 α-Ga2O3 박막 제조 방법
KR102201924B1 (ko) 2020-08-13 2021-01-11 한국세라믹기술원 도펀트 활성화 기술을 이용한 전력반도체용 갈륨옥사이드 박막 제조 방법

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