JP2010539723A5 - - Google Patents

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Publication number
JP2010539723A5
JP2010539723A5 JP2010525404A JP2010525404A JP2010539723A5 JP 2010539723 A5 JP2010539723 A5 JP 2010539723A5 JP 2010525404 A JP2010525404 A JP 2010525404A JP 2010525404 A JP2010525404 A JP 2010525404A JP 2010539723 A5 JP2010539723 A5 JP 2010539723A5
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JP
Japan
Prior art keywords
semiconductor
iii
layer
single crystal
substrate
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Pending
Application number
JP2010525404A
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English (en)
Japanese (ja)
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JP2010539723A (ja
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Priority claimed from FR0757652A external-priority patent/FR2921200B1/fr
Application filed filed Critical
Publication of JP2010539723A publication Critical patent/JP2010539723A/ja
Publication of JP2010539723A5 publication Critical patent/JP2010539723A5/ja
Pending legal-status Critical Current

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JP2010525404A 2007-09-18 2008-09-17 エピタキシャル固体半導体ヘテロ構造及びその製造方法 Pending JP2010539723A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0757652A FR2921200B1 (fr) 2007-09-18 2007-09-18 Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabrication
PCT/FR2008/051669 WO2009047448A1 (fr) 2007-09-18 2008-09-17 Hétérostructures semi-conductrices monolithiques épitaxiées et leur procédé de fabrication

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014138772A Division JP6062887B2 (ja) 2007-09-18 2014-07-04 エピタキシャル固体半導体ヘテロ構造及びその製造方法

Publications (2)

Publication Number Publication Date
JP2010539723A JP2010539723A (ja) 2010-12-16
JP2010539723A5 true JP2010539723A5 (enExample) 2011-10-27

Family

ID=39434296

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010525404A Pending JP2010539723A (ja) 2007-09-18 2008-09-17 エピタキシャル固体半導体ヘテロ構造及びその製造方法
JP2014138772A Expired - Fee Related JP6062887B2 (ja) 2007-09-18 2014-07-04 エピタキシャル固体半導体ヘテロ構造及びその製造方法
JP2016205042A Pending JP2017028318A (ja) 2007-09-18 2016-10-19 エピタキシャル固体半導体ヘテロ構造及びその製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2014138772A Expired - Fee Related JP6062887B2 (ja) 2007-09-18 2014-07-04 エピタキシャル固体半導体ヘテロ構造及びその製造方法
JP2016205042A Pending JP2017028318A (ja) 2007-09-18 2016-10-19 エピタキシャル固体半導体ヘテロ構造及びその製造方法

Country Status (5)

Country Link
US (1) US8389995B2 (enExample)
EP (1) EP2188830A1 (enExample)
JP (3) JP2010539723A (enExample)
FR (1) FR2921200B1 (enExample)
WO (1) WO2009047448A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5585137B2 (ja) * 2010-03-17 2014-09-10 行男 渡部 金属酸化物を含むへテロ構造の作製法及び該金属酸化物の製造法
US8846506B2 (en) * 2012-04-26 2014-09-30 The University Of North Carolina At Charlotte Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100)
GB2517697A (en) 2013-08-27 2015-03-04 Ibm Compound semiconductor structure
FR3069705A1 (fr) 2017-07-28 2019-02-01 Centre National De La Recherche Scientifique Cellule photovoltaique tandem
CN113284839B (zh) * 2021-05-21 2024-07-02 中国科学院上海微系统与信息技术研究所 一种钻石晶体的异质键合方法及异质结构
CN116102085B (zh) * 2023-02-24 2024-08-20 黑龙江大学 一种原位制备铁系尖晶石异质结阵列材料的方法

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