JP5585137B2 - 金属酸化物を含むへテロ構造の作製法及び該金属酸化物の製造法 - Google Patents
金属酸化物を含むへテロ構造の作製法及び該金属酸化物の製造法 Download PDFInfo
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- 229910044991 metal oxide Inorganic materials 0.000 title claims description 124
- 150000004706 metal oxides Chemical class 0.000 title claims description 124
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000000126 substance Substances 0.000 claims description 107
- 239000000523 sample Substances 0.000 claims description 100
- 229910052760 oxygen Inorganic materials 0.000 claims description 82
- 239000001301 oxygen Substances 0.000 claims description 82
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 29
- 239000010419 fine particle Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 10
- -1 oxygen atom ion Chemical class 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 8
- 239000002156 adsorbate Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 238000006557 surface reaction Methods 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 230000005281 excited state Effects 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 47
- 239000010408 film Substances 0.000 description 39
- 239000002245 particle Substances 0.000 description 26
- 239000013078 crystal Substances 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 20
- 238000005259 measurement Methods 0.000 description 20
- 239000002105 nanoparticle Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 17
- 230000006870 function Effects 0.000 description 16
- 238000012545 processing Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 239000010931 gold Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002086 nanomaterial Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 108010083687 Ion Pumps Proteins 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- YDZQQRWRVYGNER-UHFFFAOYSA-N iron;titanium;trihydrate Chemical compound O.O.O.[Ti].[Fe] YDZQQRWRVYGNER-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910018274 Cu2 O Inorganic materials 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910000648 terne Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- Catalysts (AREA)
- Recrystallisation Techniques (AREA)
Description
01 清浄共有結合性物質上の表面の反応層(表面酸化膜等)
1a 清浄共有結合性物質のナノスケール粒子
1b 清浄共有結合性物質の集積構造
1c 符号1bと物質や構造が異なる、清浄共有結合性物質の集積構造
2 金属酸化物
2a 金属酸化物のナノスケール粒子
3 共有結合性物質のナノスケールへテロ構造
03 金属酸化物のナノスケールへテロ構造
3b 共有結合性物質のナノスケールへテロ構造
3c 符号3bとは物質や構造が異なる、共有結合性物質のナノスケールへテロ構造
31 共有結合性物質のナノスケールへテロ構造
32 ナノスケールの層間絶縁膜
4 マスク
5 フォトレジスト
6 共有結合性物質の表面酸化膜等の反応層を除いて清浄化した部分
7 基板
8 絶縁膜
E1 ECRラジカル発生装置
E2 マイクロ波発生装置
E3 処理用真空槽
E4 試料
E5 加速電源
E6 真空ポンプ
E7 導入用真空槽
E8 測定用超真空槽
E9 酸素純化槽
Claims (21)
- 金属酸化物を構成要素として含むヘテロ構造の作製において、
表面に該金属酸化物を構成する酸素原子が露出した該金属酸化物と、表面が仕事関数5.0eV以下の共有結合性物質である物体を接触させて、該金属酸化物と該物体からなるヘテロ構造を作製することを特徴とするヘテロ構造の製造法。 - 金属酸化物を構成要素として含むヘテロ構造の形成において、
該金属酸化物と、表面が仕事関数5.0eV以下の共有結合性物質である物体を、接触させると、一方の全部または一部が他方に堆積することで得られる構造をヘテロ構造として用いることを特徴とするヘテロ構造の製造法。 - 請求項1または2において、前記共有結合性物質の仕事関数が4.5eV以下であることを特徴とするヘテロ構造の製造法。
- 請求項1〜3の何れかにおいて、
前記共有結合性物質が、表面から表面反応層と
吸着物を除去して得られたものであることを特徴とするヘテロ構造の製造法。
- 請求項1〜4の何れかの
ヘテロ構造の形成を真空中で行うことを特徴とするヘテロ構造の製造法。
- 請求項1〜5の何れかの
金属酸化物が、該金属酸化物の表面へ活性酸素が照射されたものであることを特徴とするヘテロ構造の製造法。
- 請求項6の活性酸素の照射を真空中で行い、活性酸素の運動エネルギーが100eV以下であることを特徴とするヘテロ構造の製造法。
- 請求項6の活性酸素が、酸素原子(原子状の中性酸素)、酸素原子イオン、酸素分子イオン、励起状態の酸素原子及び励起状態の分子、または、オゾンの少なくともいずれか一種類を含むものであることを特徴とするヘテロ構造の製造法。
- 請求項6の活性酸素の主成分が酸素原子(原子状の中性酸素)であることを特徴とするヘテロ構造の製造法。
- 請求項6の活性酸素がマイクロ波による電子サイクロトロン共鳴により生成されることを特徴とするヘテロ構造の製造法。
- 請求項1〜4の何れかにおいて、
前記金属酸化物、または、前記表面が共有結合性物質である物体において、
何れかの先端の曲率半径の2倍が、作製しようとする構造体の最短部分の長さ以下であることを特徴とするヘテロ構造の製造法。
- 請求項1〜4の何れかにおいて、
一部または全部の表面から表面反応層と吸着物
を除去されることで得られる、表面が共有結合性物質である物体であって、集積型に微細
加工されたものであることを特徴とするヘテロ構造の製造法。
- 請求項1〜4の何れかにおいて、
表面が共有結合性物質である物体の形状、または、前記金属酸化物の形状が、
微粒子であることを特徴とするヘテロ構造の製造法。
- 請求項1〜13のいずれかによって形成されるヘテロ構造の少なくとも一部が結晶性金属酸化物であることを特徴とするヘテロ構造の製造法。
- 請求項1〜13のいずれかによって形成されるヘテロ構造の少なくとも一部が結晶性複合金属酸化物であることを特徴とするヘテロ構造の製造法。
- 金属酸化物の微粒子の搬送において、
該微粒子を構成する酸素原子が該金属酸化物の表面に露出し、表面が仕事関数5.0eV以下の共有結合性物質の表面反応層を制御した物体を用いて、該微粒子と該物体の引力を制御して該微粒子を吸着することを特徴とする微粒子の搬送法。 - 請求項16において、前記物体の先端の平均曲率半径が、搬送する微
粒子の平均半径以下であることを特徴とする微粒子の搬送法。
- 請求項16において、表面反応層が、前記表面の共有結合性物質の一部または全体を酸化して得た酸化膜、または、窒化して得た窒化膜であることを特徴とする微粒子の搬送法。
- 活性酸素を照射された結晶性金属酸化物であって、大気中または真空中で、シリコン製探針と接触することにより、シリコンが該結晶性金属酸化物に堆積することを特徴とする結晶性金属酸化物。
- 請求項19において、活性酸素が、酸素原子(原子状の中性酸素)、酸素原子イオン、酸素分子イオン、励起状態の酸素原子及び励起状態の分子、または、オゾンの少なくともいずれか一種類を含むものであることを特徴とする結晶性金属酸化物。
- 請求項19または20を用いる触媒。
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