JP2010539723A - エピタキシャル固体半導体ヘテロ構造及びその製造方法 - Google Patents

エピタキシャル固体半導体ヘテロ構造及びその製造方法 Download PDF

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JP2010539723A
JP2010539723A JP2010525404A JP2010525404A JP2010539723A JP 2010539723 A JP2010539723 A JP 2010539723A JP 2010525404 A JP2010525404 A JP 2010525404A JP 2010525404 A JP2010525404 A JP 2010525404A JP 2010539723 A JP2010539723 A JP 2010539723A
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semiconductor
layer
substrate
iii
single crystal
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JP2010539723A5 (enExample
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サン−ジロン，ギローム
ラルジョ，ルドビク
パトリアルシュ，ジル
ルグルニ，フィリップ
オランジュ，ギュイ
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サントル ナシオナル ドゥ ラ ルシェルシェサイアンティフィク（セエヌエールエス）
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Publication of JP2010539723A publication Critical patent/JP2010539723A/ja
Publication of JP2010539723A5 publication Critical patent/JP2010539723A5/ja
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    • H10P14/2905—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H10P14/3238—
    • H10P14/3248—
    • H10P14/3411—
    • H10P14/3418—
    • H10P14/3421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H10P14/2926—

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2010525404A 2007-09-18 2008-09-17 エピタキシャル固体半導体ヘテロ構造及びその製造方法 Pending JP2010539723A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0757652A FR2921200B1 (fr) 2007-09-18 2007-09-18 Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabrication
PCT/FR2008/051669 WO2009047448A1 (fr) 2007-09-18 2008-09-17 Hétérostructures semi-conductrices monolithiques épitaxiées et leur procédé de fabrication

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JP2014138772A Division JP6062887B2 (ja) 2007-09-18 2014-07-04 エピタキシャル固体半導体ヘテロ構造及びその製造方法

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JP2010539723A true JP2010539723A (ja) 2010-12-16
JP2010539723A5 JP2010539723A5 (enExample) 2011-10-27

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JP2010525404A Pending JP2010539723A (ja) 2007-09-18 2008-09-17 エピタキシャル固体半導体ヘテロ構造及びその製造方法
JP2014138772A Expired - Fee Related JP6062887B2 (ja) 2007-09-18 2014-07-04 エピタキシャル固体半導体ヘテロ構造及びその製造方法
JP2016205042A Pending JP2017028318A (ja) 2007-09-18 2016-10-19 エピタキシャル固体半導体ヘテロ構造及びその製造方法

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JP2014138772A Expired - Fee Related JP6062887B2 (ja) 2007-09-18 2014-07-04 エピタキシャル固体半導体ヘテロ構造及びその製造方法
JP2016205042A Pending JP2017028318A (ja) 2007-09-18 2016-10-19 エピタキシャル固体半導体ヘテロ構造及びその製造方法

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Country Link
US (1) US8389995B2 (enExample)
EP (1) EP2188830A1 (enExample)
JP (3) JP2010539723A (enExample)
FR (1) FR2921200B1 (enExample)
WO (1) WO2009047448A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5585137B2 (ja) * 2010-03-17 2014-09-10 行男 渡部 金属酸化物を含むへテロ構造の作製法及び該金属酸化物の製造法
US8846506B2 (en) * 2012-04-26 2014-09-30 The University Of North Carolina At Charlotte Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100)
GB2517697A (en) 2013-08-27 2015-03-04 Ibm Compound semiconductor structure
FR3069705A1 (fr) 2017-07-28 2019-02-01 Centre National De La Recherche Scientifique Cellule photovoltaique tandem
CN113284839B (zh) * 2021-05-21 2024-07-02 中国科学院上海微系统与信息技术研究所 一种钻石晶体的异质键合方法及异质结构
CN116102085B (zh) * 2023-02-24 2024-08-20 黑龙江大学 一种原位制备铁系尖晶石异质结阵列材料的方法

Citations (6)

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JPH06216051A (ja) * 1992-12-02 1994-08-05 Xerox Corp エピタキシャル（１１１） 緩衝層を有する構造
US20030024471A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition
JP2003282439A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp デバイス用基板およびデバイス用基板の製造方法
JP2003306399A (ja) * 2002-03-06 2003-10-28 Agilent Technol Inc シリコン基板上にリン化インジウム層を形成する方法
WO2004051725A1 (ja) * 2002-12-03 2004-06-17 Nikko Materials Co., Ltd. エピタキシャル成長方法およびエピタキシャル成長用基板
JP2005524977A (ja) * 2002-05-03 2005-08-18 フリースケール セミコンダクター インコーポレイテッド 半導体素子をその上に搭載する単結晶酸化物

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JP2649928B2 (ja) * 1988-01-11 1997-09-03 富士通株式会社 半導体ウエハの製造方法
US6608327B1 (en) * 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6410941B1 (en) * 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6427066B1 (en) * 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
KR20030051868A (ko) * 2000-11-22 2003-06-25 모토로라 인코포레이티드 컴플라이언트 기판을 갖는 반도체 구조
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US20020153524A1 (en) * 2001-04-19 2002-10-24 Motorola Inc. Structure and method for fabricating semiconductor structures and devices utilizing perovskite stacks
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JP2003327497A (ja) * 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
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JP4707475B2 (ja) * 2005-06-17 2011-06-22 国立大学法人 東京大学 化合物半導体結晶の成長方法、その成長方法を用いて成長した化合物半導体結晶の層を備えた半導体装置及び半導体基板
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Publication number Priority date Publication date Assignee Title
JPH06216051A (ja) * 1992-12-02 1994-08-05 Xerox Corp エピタキシャル（１１１） 緩衝層を有する構造
US20030024471A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition
JP2003306399A (ja) * 2002-03-06 2003-10-28 Agilent Technol Inc シリコン基板上にリン化インジウム層を形成する方法
JP2003282439A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp デバイス用基板およびデバイス用基板の製造方法
JP2005524977A (ja) * 2002-05-03 2005-08-18 フリースケール セミコンダクター インコーポレイテッド 半導体素子をその上に搭載する単結晶酸化物
WO2004051725A1 (ja) * 2002-12-03 2004-06-17 Nikko Materials Co., Ltd. エピタキシャル成長方法およびエピタキシャル成長用基板

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Publication number Publication date
JP2017028318A (ja) 2017-02-02
FR2921200A1 (fr) 2009-03-20
JP6062887B2 (ja) 2017-01-18
US8389995B2 (en) 2013-03-05
WO2009047448A1 (fr) 2009-04-16
EP2188830A1 (fr) 2010-05-26
FR2921200B1 (fr) 2009-12-18
JP2015008293A (ja) 2015-01-15
US20100289063A1 (en) 2010-11-18

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