JP2002083824A5 - - Google Patents

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Publication number
JP2002083824A5
JP2002083824A5 JP2000270033A JP2000270033A JP2002083824A5 JP 2002083824 A5 JP2002083824 A5 JP 2002083824A5 JP 2000270033 A JP2000270033 A JP 2000270033A JP 2000270033 A JP2000270033 A JP 2000270033A JP 2002083824 A5 JP2002083824 A5 JP 2002083824A5
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JP
Japan
Prior art keywords
group
thin film
substrate
vib
iiib
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JP2000270033A
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English (en)
Japanese (ja)
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JP2002083824A (ja
JP3831592B2 (ja
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Priority to JP2000270033A priority Critical patent/JP3831592B2/ja
Priority claimed from JP2000270033A external-priority patent/JP3831592B2/ja
Publication of JP2002083824A publication Critical patent/JP2002083824A/ja
Publication of JP2002083824A5 publication Critical patent/JP2002083824A5/ja
Application granted granted Critical
Publication of JP3831592B2 publication Critical patent/JP3831592B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000270033A 2000-09-06 2000-09-06 化合物半導体薄膜の製造方法 Expired - Fee Related JP3831592B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000270033A JP3831592B2 (ja) 2000-09-06 2000-09-06 化合物半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000270033A JP3831592B2 (ja) 2000-09-06 2000-09-06 化合物半導体薄膜の製造方法

Publications (3)

Publication Number Publication Date
JP2002083824A JP2002083824A (ja) 2002-03-22
JP2002083824A5 true JP2002083824A5 (enExample) 2005-01-06
JP3831592B2 JP3831592B2 (ja) 2006-10-11

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ID=18756546

Family Applications (1)

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JP2000270033A Expired - Fee Related JP3831592B2 (ja) 2000-09-06 2000-09-06 化合物半導体薄膜の製造方法

Country Status (1)

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JP (1) JP3831592B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003005456A1 (en) * 2001-07-06 2003-01-16 Honda Giken Kogyo Kabushiki Kaisha Method for forming light-absorbing layer
JP4320525B2 (ja) * 2002-03-25 2009-08-26 本田技研工業株式会社 光吸収層の作製方法および装置
KR100810730B1 (ko) * 2006-06-19 2008-03-07 (주)인솔라텍 태양전지용 광흡수층의 제조방법
JP5182494B2 (ja) * 2008-05-30 2013-04-17 三菱マテリアル株式会社 カルコパイライト型半導体膜成膜用スパッタリングターゲットの製造方法
KR101060180B1 (ko) 2008-11-25 2011-08-29 한국광기술원 태양전지의 흡수층 제조방법
WO2011017235A2 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Methods for photovoltaic absorbers with controlled stoichiometry
CN102471360A (zh) 2009-08-04 2012-05-23 普瑞凯瑟安质提克斯公司 用于caigas含铝光伏装置的聚合前体
CA2768615A1 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Polymeric precursors for cis and cigs photovoltaics
EP2462150A2 (en) 2009-08-04 2012-06-13 Precursor Energetics, Inc. Polymeric precursors for caigs and aigs silver-containing photovoltaics
WO2011084171A1 (en) 2009-12-17 2011-07-14 Precursor Energetics, Inc. Molecular precursors for optoelectronics
KR20140009975A (ko) 2010-09-15 2014-01-23 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 침착 방법 및 장치
JP5930518B2 (ja) * 2011-08-26 2016-06-08 株式会社アルバック 化合物半導体薄膜の製造方法
KR20140116203A (ko) * 2012-01-18 2014-10-01 누보선, 인크. 가요성 기판 상에 태양 전지를 형성하기 위한 시스템
US20150027538A1 (en) * 2012-03-02 2015-01-29 Tdk Corporation Compound semiconductor solar battery and method of manufacturing light absorption layer of compound semiconductor solar battery

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