JP3831592B2 - 化合物半導体薄膜の製造方法 - Google Patents
化合物半導体薄膜の製造方法 Download PDFInfo
- Publication number
- JP3831592B2 JP3831592B2 JP2000270033A JP2000270033A JP3831592B2 JP 3831592 B2 JP3831592 B2 JP 3831592B2 JP 2000270033 A JP2000270033 A JP 2000270033A JP 2000270033 A JP2000270033 A JP 2000270033A JP 3831592 B2 JP3831592 B2 JP 3831592B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- thin film
- layer
- substrate
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000270033A JP3831592B2 (ja) | 2000-09-06 | 2000-09-06 | 化合物半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000270033A JP3831592B2 (ja) | 2000-09-06 | 2000-09-06 | 化合物半導体薄膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002083824A JP2002083824A (ja) | 2002-03-22 |
| JP2002083824A5 JP2002083824A5 (enExample) | 2005-01-06 |
| JP3831592B2 true JP3831592B2 (ja) | 2006-10-11 |
Family
ID=18756546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000270033A Expired - Fee Related JP3831592B2 (ja) | 2000-09-06 | 2000-09-06 | 化合物半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3831592B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60237159D1 (de) * | 2001-07-06 | 2010-09-09 | Honda Motor Co Ltd | Verfahren zur ausbildung einer lichtabsorbierenden schicht |
| JP4320525B2 (ja) * | 2002-03-25 | 2009-08-26 | 本田技研工業株式会社 | 光吸収層の作製方法および装置 |
| KR100810730B1 (ko) * | 2006-06-19 | 2008-03-07 | (주)인솔라텍 | 태양전지용 광흡수층의 제조방법 |
| JP5182494B2 (ja) * | 2008-05-30 | 2013-04-17 | 三菱マテリアル株式会社 | カルコパイライト型半導体膜成膜用スパッタリングターゲットの製造方法 |
| KR101060180B1 (ko) | 2008-11-25 | 2011-08-29 | 한국광기술원 | 태양전지의 흡수층 제조방법 |
| CN102471360A (zh) | 2009-08-04 | 2012-05-23 | 普瑞凯瑟安质提克斯公司 | 用于caigas含铝光伏装置的聚合前体 |
| SG178229A1 (en) | 2009-08-04 | 2012-03-29 | Precursor Energetics Inc | Methods for photovoltaic absorbers with controlled stoichiometry |
| CN102471359A (zh) | 2009-08-04 | 2012-05-23 | 普瑞凯瑟安质提克斯公司 | 用于cis及cigs光伏装置的聚合前体 |
| US8721930B2 (en) | 2009-08-04 | 2014-05-13 | Precursor Energetics, Inc. | Polymeric precursors for AIGS silver-containing photovoltaics |
| WO2011084171A1 (en) | 2009-12-17 | 2011-07-14 | Precursor Energetics, Inc. | Molecular precursors for optoelectronics |
| WO2012037389A2 (en) | 2010-09-15 | 2012-03-22 | Precursor Energetics, Inc. | Inks with alkali metals for thin film solar cell processes |
| JP5930518B2 (ja) * | 2011-08-26 | 2016-06-08 | 株式会社アルバック | 化合物半導体薄膜の製造方法 |
| MX344096B (es) * | 2012-01-18 | 2016-12-05 | Nuvosun Inc | Sistemas para la formacion de celdas fotovoltaicas en substratos flexibles. |
| US20150027538A1 (en) * | 2012-03-02 | 2015-01-29 | Tdk Corporation | Compound semiconductor solar battery and method of manufacturing light absorption layer of compound semiconductor solar battery |
-
2000
- 2000-09-06 JP JP2000270033A patent/JP3831592B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002083824A (ja) | 2002-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3831592B2 (ja) | 化合物半導体薄膜の製造方法 | |
| EP1424735B1 (en) | Method for forming light-absorbing layer | |
| JP4680182B2 (ja) | カルコパイライト型薄膜太陽電池用光吸収層の製造方法 | |
| JP3897622B2 (ja) | 化合物半導体薄膜の製造方法 | |
| TW201123470A (en) | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates | |
| JP4320525B2 (ja) | 光吸収層の作製方法および装置 | |
| JP4056702B2 (ja) | 化合物半導体薄膜の製造方法 | |
| JP2000087234A (ja) | 化合物膜の製造装置および化合物膜の製造方法 | |
| JP3976626B2 (ja) | 化合物半導体薄膜の製造方法 | |
| JP2003282600A (ja) | 光吸収層の作製方法および装置 | |
| KR100347106B1 (ko) | 이원화합물의 진공증발 증착에 의한 CuInSe2박막의 제조방법 | |
| Basol et al. | CuInSe2 films and solar cells obtained by selenization of evaporated Cu‐In layers | |
| JP2992159B2 (ja) | 化合物半導体薄膜層の成膜方法 | |
| JPH06120545A (ja) | 薄膜太陽電池の製造方法 | |
| JP2012015328A (ja) | Cis系膜の製造方法 | |
| JP5378534B2 (ja) | カルコパイライト型化合物薄膜の製造方法およびそれを用いた薄膜太陽電池の製造方法 | |
| KR102298011B1 (ko) | In-situ 스퍼터링 기반 셀렌화에 의한 CIGS 광흡수층 제조방법 | |
| JPH04132233A (ja) | CuInSe↓2系化合物薄膜の形成方法 | |
| JP3431318B2 (ja) | カルコパイライト構造半導体薄膜の製造方法 | |
| TW201503379A (zh) | 成型太陽能電池之吸收物層之方法 | |
| JPH07216533A (ja) | カルコパイライト構造半導体薄膜の製造方法 | |
| JP2003188396A (ja) | 光吸収層の形成方法および装置 | |
| JP2012015314A (ja) | Cis系膜の製造方法 | |
| JPH05263219A (ja) | セレン化銅インジウム薄膜の製造方法 | |
| JPH08111425A (ja) | カルコパイライト構造半導体薄膜の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040205 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040205 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20041021 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060425 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060621 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060711 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060714 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |