DE60237159D1 - Verfahren zur ausbildung einer lichtabsorbierenden schicht - Google Patents

Verfahren zur ausbildung einer lichtabsorbierenden schicht

Info

Publication number
DE60237159D1
DE60237159D1 DE60237159T DE60237159T DE60237159D1 DE 60237159 D1 DE60237159 D1 DE 60237159D1 DE 60237159 T DE60237159 T DE 60237159T DE 60237159 T DE60237159 T DE 60237159T DE 60237159 D1 DE60237159 D1 DE 60237159D1
Authority
DE
Germany
Prior art keywords
forming
absorbing layer
light absorbing
light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60237159T
Other languages
English (en)
Inventor
Nobuyoshi Takeuchi
Tomoyuki Kume
Takashi Komaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Original Assignee
Honda Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Application granted granted Critical
Publication of DE60237159D1 publication Critical patent/DE60237159D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE60237159T 2001-07-06 2002-06-10 Verfahren zur ausbildung einer lichtabsorbierenden schicht Expired - Lifetime DE60237159D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001244973 2001-07-06
JP2001348084 2001-10-10
PCT/JP2002/005730 WO2003005456A1 (en) 2001-07-06 2002-06-10 Method for forming light-absorbing layer

Publications (1)

Publication Number Publication Date
DE60237159D1 true DE60237159D1 (de) 2010-09-09

Family

ID=26620446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60237159T Expired - Lifetime DE60237159D1 (de) 2001-07-06 2002-06-10 Verfahren zur ausbildung einer lichtabsorbierenden schicht

Country Status (5)

Country Link
US (1) US20050006221A1 (de)
EP (1) EP1424735B1 (de)
JP (1) JP3811825B2 (de)
DE (1) DE60237159D1 (de)
WO (1) WO2003005456A1 (de)

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WO2005098968A1 (ja) * 2004-04-09 2005-10-20 Honda Motor Co., Ltd. カルコパイライト型薄膜太陽電池用光吸収層の製造方法
US7833821B2 (en) * 2005-10-24 2010-11-16 Solopower, Inc. Method and apparatus for thin film solar cell manufacturing
AU2008297944A1 (en) * 2007-09-11 2009-03-19 Centrotherm Photovoltaics Ag Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module
US8779283B2 (en) * 2007-11-29 2014-07-15 General Electric Company Absorber layer for thin film photovoltaics and a solar cell made therefrom
JP4620105B2 (ja) * 2007-11-30 2011-01-26 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の製造方法
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
CN101807620B (zh) * 2009-02-17 2015-05-13 通用电气公司 用于薄膜光伏的吸收层及由其制成的太阳能电池
AU2009200640B2 (en) * 2009-02-18 2015-02-05 General Electric Company Absorber layer for thin film photovoltaics and a solar cell made therefrom
JP2010192690A (ja) * 2009-02-18 2010-09-02 Tdk Corp 太陽電池の製造方法
JP2010232608A (ja) * 2009-03-30 2010-10-14 Honda Motor Co Ltd カルコパイライト型太陽電池の製造方法
US20110023750A1 (en) * 2009-07-28 2011-02-03 Kuan-Che Wang Ink composition for forming absorbers of thin film cells and producing method thereof
KR101271753B1 (ko) * 2009-11-20 2013-06-05 한국전자통신연구원 박막형 광 흡수층의 제조 방법, 이를 이용한 박막 태양전지 제조 방법 및 박막 태양전지
DE102009047483A1 (de) * 2009-12-04 2011-06-09 Sulfurcell Solartechnik Gmbh Vorrichtung und Verfahren zur Erzeugung von Chalkopyrit-Absorberschichten in Solarzellen
CN101814553B (zh) * 2010-03-05 2011-10-05 中国科学院上海硅酸盐研究所 光辅助方法制备铜铟镓硒薄膜太阳电池光吸收层
EP2548218A1 (de) 2010-03-17 2013-01-23 Dow Global Technologies LLC Auf chalcogenid basierende materialien und verbesserte verfahren zur herstellung derartiger materialien
CN102024870B (zh) * 2010-04-19 2013-07-24 福建欧德生光电科技有限公司 半导体薄膜太阳能电池的制造系统和方法
KR20110128580A (ko) 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 제조 방법
TWI508179B (zh) * 2010-07-23 2015-11-11 Sunshine Pv Corp 薄膜太陽能電池的退火裝置
US20120034764A1 (en) * 2010-08-05 2012-02-09 Aventa Technologies Llc System and method for fabricating thin-film photovoltaic devices
US20120034733A1 (en) * 2010-08-05 2012-02-09 Aventa Technologies Llc System and method for fabricating thin-film photovoltaic devices
JP2012079997A (ja) * 2010-10-05 2012-04-19 Kobe Steel Ltd 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット
EP2487722A1 (de) 2011-01-19 2012-08-15 Hitachi, Ltd. Lichtabsorptionsschicht
EA020377B1 (ru) * 2011-05-12 2014-10-30 Общество С Ограниченной Ответственностью "Изовак" Способ формирования тонких пленок cigs для солнечных батарей и устройство для его реализации
CN102214735A (zh) * 2011-06-11 2011-10-12 蚌埠玻璃工业设计研究院 一种铜铟镓硒/硫太阳电池吸收层的制备方法
US8642884B2 (en) * 2011-09-09 2014-02-04 International Business Machines Corporation Heat treatment process and photovoltaic device based on said process
US9082619B2 (en) * 2012-07-09 2015-07-14 International Solar Electric Technology, Inc. Methods and apparatuses for forming semiconductor films
KR101521450B1 (ko) * 2013-01-28 2015-05-21 조선대학교산학협력단 CuSe2를 타겟으로 하는 비셀렌화 스퍼터링 공정을 이용한 CIGS 박막 제조방법
US10840400B2 (en) * 2013-08-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device with back reflector
CN104393111A (zh) * 2014-10-31 2015-03-04 徐东 一种cigs太阳能电池吸收层的制备方法
CN104300014A (zh) * 2014-10-31 2015-01-21 徐东 一种cigs太阳能电池吸收层的制备设备及其制备方法
CN104538492A (zh) * 2014-12-11 2015-04-22 兰州空间技术物理研究所 一种铜铟镓硒薄膜太阳电池光吸收层薄膜的制备方法

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US4798660A (en) * 1985-07-16 1989-01-17 Atlantic Richfield Company Method for forming Cu In Se2 films
US5439575A (en) * 1988-06-30 1995-08-08 Board Of Trustees Of The University Of Illinois Hybrid method for depositing semi-conductive materials
US4915745A (en) * 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
JPH02217467A (ja) * 1989-02-17 1990-08-30 Pioneer Electron Corp 対向ターゲット型スパッタリング装置
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JPH03268335A (ja) * 1990-03-16 1991-11-29 Fuji Electric Corp Res & Dev Ltd カルコパイライト系化合物膜の生成方法
JPH0539562A (ja) * 1991-08-06 1993-02-19 Fuji Electric Corp Res & Dev Ltd ＣｕＩｎＳｅ２ 薄膜の形成方法
JPH05166726A (ja) * 1991-12-19 1993-07-02 Matsushita Electric Ind Co Ltd 化合物薄膜の製造方法
JPH05182911A (ja) * 1991-12-27 1993-07-23 Hitachi Ltd スパッタ装置
US5667650A (en) * 1995-02-14 1997-09-16 E. I. Du Pont De Nemours And Company High flow gas manifold for high rate, off-axis sputter deposition
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP3886209B2 (ja) * 1997-06-02 2007-02-28 貞夫 門倉 対向ターゲット式スパッタ装置
US6323417B1 (en) * 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
JP4389076B2 (ja) * 1999-04-16 2009-12-24 本田技研工業株式会社 化合物成膜方法および装置
JP2001035861A (ja) * 1999-07-23 2001-02-09 Matsushita Electric Ind Co Ltd 薄膜の製造方法および製造装置
JP3831592B2 (ja) * 2000-09-06 2006-10-11 松下電器産業株式会社 化合物半導体薄膜の製造方法

Also Published As

Publication number Publication date
EP1424735A4 (de) 2008-08-20
WO2003005456A1 (en) 2003-01-16
JPWO2003005456A1 (ja) 2004-10-28
EP1424735A1 (de) 2004-06-02
EP1424735A8 (de) 2005-04-13
US20050006221A1 (en) 2005-01-13
JP3811825B2 (ja) 2006-08-23
EP1424735B1 (de) 2010-07-28

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