JP4680182B2 - カルコパイライト型薄膜太陽電池用光吸収層の製造方法 - Google Patents
カルコパイライト型薄膜太陽電池用光吸収層の製造方法 Download PDFInfo
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- JP4680182B2 JP4680182B2 JP2006512134A JP2006512134A JP4680182B2 JP 4680182 B2 JP4680182 B2 JP 4680182B2 JP 2006512134 A JP2006512134 A JP 2006512134A JP 2006512134 A JP2006512134 A JP 2006512134A JP 4680182 B2 JP4680182 B2 JP 4680182B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
従って、本発明により製造される光吸収層を備えた太陽電池は、カルコパイライト型薄膜太陽電池に特徴的な光電変換効率性能の優位性を確実に得ることができる。
更に、基板1cを搭載した石英ボート42は、石英製プロセスチューブ46により囲繞されている。プロセスチューブ46により囲繞される密閉空間は、図外の真空排気機構により圧力条件が可変であり、この密閉空間内部にセレン化水素ガスを導入するガス導入管47が貫入されている。ガス導入管47の周壁には多数のノズル孔48が穿設され、ノズル孔48からセレン化水素ガスがプロセスチューブ46に流入する。また、プロセスチューブ46内でセレン化水素ガスの均一な流通が得られるように、ノズル孔48の径は1〜2mmの範囲にある。
光吸収層4(図1参照)の作製に際して、インライン式スパッタ成膜装置38(図3参照)を用いてIn金属層及びCu−Ga合金層を積層した所定枚数分のガラス基板1cを、図4に示す熱処理室40内に収容する。次いで、図5に示す温度プロファイルに従ってセレン化処理を行う。
本実施例では、真空引き時間t2を1minとしたが、高温で真空状態に保持することにより、処理中のプリカーサからIn等の成分が蒸発してしまうため、高性能な真空装置を用いて時間t2を短縮してもよい。
実施例1と同様にして、In金属層及びCu−Ga合金層を積層したガラス基板1cを熱処理室40内に収容する。次いで、図6に示す温度プロファイルに従ってセレン化処理を行う。本実施例で図5に示す温度プロファイルと異なるのは、第1セレン化工程の直後から比較的小流量のH2Seガスを供給し、この小流量のH2Seガスの供給を250℃〜450℃に昇温した後の第2セレン化工程において間断なく連続させたことである。このように、第1セレン化工程直後からの昇温時間を含む第2セレン化工程は、時間t5として図6に示される。
Claims (4)
- 裏面電極層上に、該電極層に隣接するIn金属層とCu−Ga合金層とをスパッタリング法により積層するプリカーサ形成工程と、該プリカーサが形成された基板を気密空間に収容した状態で、室温〜250℃の温度範囲とした該空間内にセレン化水素ガスを導入する第1セレン化工程と、250℃〜450℃の温度範囲に昇温した前記空間内にセレン化水素ガスを追加導入する第2セレン化工程と、該第2セレン化工程までの導入セレン化水素ガスを前記空間内に残留させた状態で、前記空間内を450℃〜650℃の温度範囲に昇温し、該温度範囲条件下で前記基板の熱処理を行う第3セレン化工程と、該熱処理後の基板を冷却する冷却工程とからなることを特徴とするカルコパイライト型薄膜太陽電池用光吸収層の製造方法。
- 前記第2セレン化工程中に、セレン化水素ガスの供給を遮断して前記気密空間内の真空排気を行う真空工程を介在させることを特徴とする請求項1記載のカルコパイライト型薄膜太陽電池用光吸収層の製造方法。
- 前記第1セレン化工程の直後から第2セレン化工程にわたってセレン化水素ガスを連続的に供給することを特徴とする請求項1記載のカルコパイライト型薄膜太陽電池用光吸収層の製造方法。
- 前記気密空間内に回転可能に設けた筺体内に前記基板が略直立した縦置状態で収容され、前記第1、第2、第3のセレン化工程及び前記冷却工程のうちの少なくとも1つの工程中に、上記筺体を回転させることを特徴とする請求項1〜3のいずれかに記載のカルコパイライト型薄膜太陽電池用光吸収層の製造方法。
Applications Claiming Priority (3)
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JP2004115489 | 2004-04-09 | ||
JP2004115489 | 2004-04-09 | ||
PCT/JP2005/006944 WO2005098968A1 (ja) | 2004-04-09 | 2005-04-08 | カルコパイライト型薄膜太陽電池用光吸収層の製造方法 |
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JPWO2005098968A1 JPWO2005098968A1 (ja) | 2008-03-06 |
JP4680182B2 true JP4680182B2 (ja) | 2011-05-11 |
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JP2006512134A Expired - Fee Related JP4680182B2 (ja) | 2004-04-09 | 2005-04-08 | カルコパイライト型薄膜太陽電池用光吸収層の製造方法 |
Country Status (5)
Country | Link |
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US (1) | US8828479B2 (ja) |
JP (1) | JP4680182B2 (ja) |
CN (1) | CN100456502C (ja) |
DE (1) | DE112005000785T5 (ja) |
WO (1) | WO2005098968A1 (ja) |
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JP3682534B2 (ja) * | 2002-09-18 | 2005-08-10 | 独立行政法人産業技術総合研究所 | 高誘電率薄膜及びその作製方法 |
JP2004111664A (ja) * | 2002-09-19 | 2004-04-08 | Shinto Fine Co Ltd | 化合物半導体薄膜の形成方法 |
KR101115484B1 (ko) * | 2004-03-15 | 2012-02-27 | 솔로파워, 인코포레이티드 | 태양 전지 제작용 반도체 박층의 증착을 위한 기술 및 장치 |
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- 2005-04-08 CN CNB2005800119490A patent/CN100456502C/zh not_active Expired - Fee Related
- 2005-04-08 DE DE112005000785T patent/DE112005000785T5/de not_active Ceased
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Publication number | Priority date | Publication date | Assignee | Title |
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KR101252472B1 (ko) * | 2011-09-22 | 2013-04-09 | 주식회사 아바코 | 태양 전지의 제조 방법 |
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US20080035199A1 (en) | 2008-02-14 |
JPWO2005098968A1 (ja) | 2008-03-06 |
CN100456502C (zh) | 2009-01-28 |
DE112005000785T5 (de) | 2007-03-01 |
WO2005098968A1 (ja) | 2005-10-20 |
US8828479B2 (en) | 2014-09-09 |
CN1943043A (zh) | 2007-04-04 |
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