SE0402432D0 - Apparatus and method of manufacturing solar cells - Google Patents

Apparatus and method of manufacturing solar cells

Info

Publication number
SE0402432D0
SE0402432D0 SE0402432A SE0402432A SE0402432D0 SE 0402432 D0 SE0402432 D0 SE 0402432D0 SE 0402432 A SE0402432 A SE 0402432A SE 0402432 A SE0402432 A SE 0402432A SE 0402432 D0 SE0402432 D0 SE 0402432D0
Authority
SE
Sweden
Prior art keywords
solar cells
heated
deposited material
deposited
manufacturing solar
Prior art date
Application number
SE0402432A
Other languages
English (en)
Other versions
SE0402432L (sv
SE527733C2 (sv
Inventor
Sven Lindstroem
Original Assignee
Startskottet 26540 Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Startskottet 26540 Ab filed Critical Startskottet 26540 Ab
Priority to SE0402432A priority Critical patent/SE527733C2/sv
Publication of SE0402432D0 publication Critical patent/SE0402432D0/sv
Priority to PCT/SE2005/001476 priority patent/WO2006038875A1/en
Priority to EP05789660A priority patent/EP1797593A1/en
Priority to US11/664,982 priority patent/US8058090B2/en
Priority to SG200906653-1A priority patent/SG156617A1/en
Priority to JP2007535643A priority patent/JP2008516445A/ja
Priority to KR1020077008019A priority patent/KR20070103359A/ko
Priority to CN200580034270A priority patent/CN100583462C/zh
Priority to AU2005292714A priority patent/AU2005292714A1/en
Publication of SE0402432L publication Critical patent/SE0402432L/sv
Publication of SE527733C2 publication Critical patent/SE527733C2/sv
Priority to IL182326A priority patent/IL182326A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/5813—Thermal treatment using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
SE0402432A 2004-10-08 2004-10-08 Anordning och metod för att tillverka solceller SE527733C2 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE0402432A SE527733C2 (sv) 2004-10-08 2004-10-08 Anordning och metod för att tillverka solceller
AU2005292714A AU2005292714A1 (en) 2004-10-08 2005-10-06 Apparatus and method of manufacturing solar cells
SG200906653-1A SG156617A1 (en) 2004-10-08 2005-10-06 Apparatus and method of manufacturing solar cells
EP05789660A EP1797593A1 (en) 2004-10-08 2005-10-06 Apparatus and method of manufacturing solar cells
US11/664,982 US8058090B2 (en) 2004-10-08 2005-10-06 Apparatus and method of manufacturing solar cells
PCT/SE2005/001476 WO2006038875A1 (en) 2004-10-08 2005-10-06 Apparatus and method of manufacturing solar cells
JP2007535643A JP2008516445A (ja) 2004-10-08 2005-10-06 太陽電池の製造装置および方法
KR1020077008019A KR20070103359A (ko) 2004-10-08 2005-10-06 태양 전지 제조 장치 및 방법
CN200580034270A CN100583462C (zh) 2004-10-08 2005-10-06 制造太阳能电池的装置和方法
IL182326A IL182326A0 (en) 2004-10-08 2007-03-29 Apparatus and method of manufacturing solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0402432A SE527733C2 (sv) 2004-10-08 2004-10-08 Anordning och metod för att tillverka solceller

Publications (3)

Publication Number Publication Date
SE0402432D0 true SE0402432D0 (sv) 2004-10-08
SE0402432L SE0402432L (sv) 2006-04-09
SE527733C2 SE527733C2 (sv) 2006-05-23

Family

ID=33434207

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0402432A SE527733C2 (sv) 2004-10-08 2004-10-08 Anordning och metod för att tillverka solceller

Country Status (10)

Country Link
US (1) US8058090B2 (sv)
EP (1) EP1797593A1 (sv)
JP (1) JP2008516445A (sv)
KR (1) KR20070103359A (sv)
CN (1) CN100583462C (sv)
AU (1) AU2005292714A1 (sv)
IL (1) IL182326A0 (sv)
SE (1) SE527733C2 (sv)
SG (1) SG156617A1 (sv)
WO (1) WO2006038875A1 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009005297B4 (de) * 2009-01-16 2013-05-08 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Beschichtung von Substraten mittels Vakuumbedampfung
EP2219231A1 (en) * 2009-02-12 2010-08-18 Excico France Method and apparatus for irradiating a photovoltaic material surface by laser energy
DE102009033417C5 (de) * 2009-04-09 2022-10-06 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Verfahren und Anlage zur Herstellung eines beschichteten Gegenstands mittels Tempern
JP2013529378A (ja) * 2010-04-19 2013-07-18 韓国生産技術研究院 太陽電池の製造方法
CN103824649B (zh) * 2014-01-25 2016-11-09 陕西师范大学 一种利用电磁加热优化透明导电氧化物薄膜质量的方法
US9978896B2 (en) 2015-09-15 2018-05-22 Sunpower Corporation Encapsulant bonding methods for photovoltaic module manufacturing

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6486344A (en) * 1987-09-29 1989-03-31 Victor Company Of Japan Information recording carrier and production thereof
US4824489A (en) 1988-02-02 1989-04-25 Sera Solar Corporation Ultra-thin solar cell and method
JP2784841B2 (ja) * 1990-08-09 1998-08-06 キヤノン株式会社 太陽電池用基板
US5714404A (en) 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
US5456763A (en) 1994-03-29 1995-10-10 The Regents Of The University Of California Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon
JP3841866B2 (ja) * 1996-03-04 2006-11-08 三菱電機株式会社 再結晶化材料の製法、その製造装置および加熱方法
EP0837511B1 (en) * 1996-10-15 2005-09-14 Matsushita Electric Industrial Co., Ltd Solar cell and method for manufacturing the same
JPH1174206A (ja) 1997-08-27 1999-03-16 Japan Steel Works Ltd:The 多結晶半導体の製造方法および製造装置
US6258620B1 (en) 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
AU2002233930A1 (en) 2000-11-16 2002-05-27 Solarflex Technologies, Inc. System and methods for laser assisted deposition
JP3900924B2 (ja) 2001-04-03 2007-04-04 トヨタ自動車株式会社 ステアリング装置の支持機構
FR2839201B1 (fr) * 2002-04-29 2005-04-01 Electricite De France Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques
JP2004063924A (ja) 2002-07-31 2004-02-26 Mitsubishi Heavy Ind Ltd レーザアニール方法及び装置
JP2004193490A (ja) * 2002-12-13 2004-07-08 Seiko Epson Corp レーザー照射装置、レーザーの照射方法、及び半導体装置の製造方法
US20050072461A1 (en) * 2003-05-27 2005-04-07 Frank Kuchinski Pinhole porosity free insulating films on flexible metallic substrates for thin film applications
TW200503061A (en) * 2003-06-30 2005-01-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates

Also Published As

Publication number Publication date
WO2006038875A1 (en) 2006-04-13
SE0402432L (sv) 2006-04-09
EP1797593A1 (en) 2007-06-20
CN101036236A (zh) 2007-09-12
US20090011535A1 (en) 2009-01-08
CN100583462C (zh) 2010-01-20
JP2008516445A (ja) 2008-05-15
IL182326A0 (en) 2007-07-24
US8058090B2 (en) 2011-11-15
SG156617A1 (en) 2009-11-26
AU2005292714A1 (en) 2006-04-13
SE527733C2 (sv) 2006-05-23
KR20070103359A (ko) 2007-10-23

Similar Documents

Publication Publication Date Title
FR2883663B1 (fr) Procede de fabrication d'une cellule photovoltaique a base de silicium en couche mince.
SE0400582D0 (sv) Method for in-line process control of the CIGS process
SG156617A1 (en) Apparatus and method of manufacturing solar cells
EA201071184A1 (ru) Способ осаждения тонкого слоя
TW200943495A (en) Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
SG10201407862QA (en) Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
DE602007006834D1 (de) Elektronische vorrichtung mit kunststoffsubstrat
DK1579204T3 (da) Fremstilling af elektrokemiske sensorer ved anvendelse af en bevægelig flad skabelon
KR101880835B1 (ko) 저온 다결정실리콘 박막 및 그 제조방법, 트랜지스터
WO2007121383A3 (en) Method and apparatus to form thin layers of materials on a base
NO20052878L (no) Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
TW200507279A (en) Thin-film semiconductor substrate, method of manufacturing the same; apparatus for and method of crystallization;Thin-film semiconductor apparatus, method of manufacturing the same;
DE602005025976D1 (de) Herstellungsverfahren für ein siliziumcarbidhalbleiterbauelement
WO2008156337A3 (en) Solar cell, method of fabricating the same and apparatus for fabricating the same
WO2007005813A3 (en) Inorganic semiconductive films and methods therefor
EP4026881A4 (en) ORGANIC THIN FILM AND METHOD FOR PRODUCTION OF ORGANIC THIN FILM, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE, LIGHTING DEVICE, ORGANIC THIN FILM SOLAR CELL, PHOTOELECTRIC CONVERSION ELEMENT, THIN FILM TRANSISTOR, COATING COMPOSITION AND MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENTS
WO2008147113A3 (en) High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
EP1548809B8 (en) Heat treatment method and heat treatment apparatus
WO2006065441A3 (en) Manufacturing method for pixilated crystal
FR2936905B1 (fr) Cellule photovoltaique a heterojonction a deux dopages et procede de fabrication.
EP2840594A3 (fr) Recristallisation de blocs de source et de drain par le haut
TW200725704A (en) Method and apparatus for fabricating polycrystalline silicon film using transparent substrate
TW200725897A (en) Thin film transistor, device electrode thereof and method of formong the same
WO2008114341A1 (ja) 半導体装置およびその製造方法
ATE514194T1 (de) System und verfahren zum herstellen eines solarzellen-arrays