WO2008114341A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2008114341A1
WO2008114341A1 PCT/JP2007/055351 JP2007055351W WO2008114341A1 WO 2008114341 A1 WO2008114341 A1 WO 2008114341A1 JP 2007055351 W JP2007055351 W JP 2007055351W WO 2008114341 A1 WO2008114341 A1 WO 2008114341A1
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
electrode material
semiconductor device
gate electrode
material film
Prior art date
Application number
PCT/JP2007/055351
Other languages
English (en)
French (fr)
Inventor
Masaki Okuno
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to JP2009504941A priority Critical patent/JP5110079B2/ja
Priority to PCT/JP2007/055351 priority patent/WO2008114341A1/ja
Publication of WO2008114341A1 publication Critical patent/WO2008114341A1/ja
Priority to US12/543,794 priority patent/US8071448B2/en
Priority to US13/287,770 priority patent/US8507990B2/en
Priority to US13/934,759 priority patent/US8692331B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

　半導体装置の製造方法は、半導体基板上にゲート電極材料膜を成膜し、前記ゲート電極材料膜を線状にパタニングし、前記線状のゲート電極材料膜パタンの長辺に沿ってサイドウォールを形成し、その後に、前記直線を所定の箇所で切断して、複数のゲート電極に分断する工程を含む。
PCT/JP2007/055351 2007-03-16 2007-03-16 半導体装置およびその製造方法 WO2008114341A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009504941A JP5110079B2 (ja) 2007-03-16 2007-03-16 半導体装置の製造方法
PCT/JP2007/055351 WO2008114341A1 (ja) 2007-03-16 2007-03-16 半導体装置およびその製造方法
US12/543,794 US8071448B2 (en) 2007-03-16 2009-08-19 Semiconductor device and manufacturing method of the same
US13/287,770 US8507990B2 (en) 2007-03-16 2011-11-02 Semiconductor device and manufacturing method of the same
US13/934,759 US8692331B2 (en) 2007-03-16 2013-07-03 Semiconductor device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055351 WO2008114341A1 (ja) 2007-03-16 2007-03-16 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/543,794 Continuation US8071448B2 (en) 2007-03-16 2009-08-19 Semiconductor device and manufacturing method of the same

Publications (1)

Publication Number Publication Date
WO2008114341A1 true WO2008114341A1 (ja) 2008-09-25

Family

ID=39765463

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055351 WO2008114341A1 (ja) 2007-03-16 2007-03-16 半導体装置およびその製造方法

Country Status (3)

Country Link
US (3) US8071448B2 (ja)
JP (1) JP5110079B2 (ja)
WO (1) WO2008114341A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124272A (ja) * 2009-12-08 2011-06-23 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
JP2012174910A (ja) * 2011-02-22 2012-09-10 Renesas Electronics Corp 半導体装置およびその製造方法
JP2013157498A (ja) * 2012-01-31 2013-08-15 Renesas Electronics Corp 半導体装置及びその製造方法
JP2014507067A (ja) * 2011-01-11 2014-03-20 クアルコム，インコーポレイテッド 複数の電圧閾値を有するデバイスのための二重のポリラインパターニングを用いたスタンダードセルのアーキテクチャ
JP2015537383A (ja) * 2012-11-07 2015-12-24 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552230B (zh) * 2010-07-15 2016-10-01 聯華電子股份有限公司 金氧半導體電晶體及其製作方法
JP5699826B2 (ja) * 2011-06-27 2015-04-15 富士通セミコンダクター株式会社 レイアウト方法及び半導体装置の製造方法
US8735972B2 (en) * 2011-09-08 2014-05-27 International Business Machines Corporation SRAM cell having recessed storage node connections and method of fabricating same
US9633906B2 (en) * 2014-01-24 2017-04-25 International Business Machines Corporation Gate structure cut after formation of epitaxial active regions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0265213A (ja) * 1988-08-31 1990-03-05 Taiyo Yuden Co Ltd 還元再酸化型半導体コンデンサ用磁器組成物及び磁器

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JPS59127866A (ja) * 1983-01-13 1984-07-23 Toshiba Corp 半導体装置の製造方法
US5217913A (en) * 1988-08-31 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
JPH0265235A (ja) 1988-08-31 1990-03-05 Mitsubishi Electric Corp 半導体集積回路装置
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US5021354A (en) * 1989-12-04 1991-06-04 Motorola, Inc. Process for manufacturing a semiconductor device
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JP2000091448A (ja) * 1998-09-12 2000-03-31 Toshiba Corp 半導体装置の製造方法
TW480735B (en) * 2001-04-24 2002-03-21 United Microelectronics Corp Structure and manufacturing method of polysilicon thin film transistor
JP4255836B2 (ja) * 2001-12-19 2009-04-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 改善されたトランジスタ性能に対する複合スペーサライナー
JP2004039705A (ja) * 2002-07-01 2004-02-05 Toshiba Corp 半導体装置
EP1411146B1 (en) * 2002-10-17 2010-06-09 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
US6936528B2 (en) 2002-10-17 2005-08-30 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
JP2004140315A (ja) 2002-10-17 2004-05-13 Samsung Electronics Co Ltd サリサイド工程を用いる半導体素子の製造方法
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Patent Citations (1)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124272A (ja) * 2009-12-08 2011-06-23 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
JP2014507067A (ja) * 2011-01-11 2014-03-20 クアルコム，インコーポレイテッド 複数の電圧閾値を有するデバイスのための二重のポリラインパターニングを用いたスタンダードセルのアーキテクチャ
JP2015156517A (ja) * 2011-01-11 2015-08-27 クアルコム，インコーポレイテッド スタンダードセルのアーキテクチャと関連付けられるデバイスの製造方法
JP2012174910A (ja) * 2011-02-22 2012-09-10 Renesas Electronics Corp 半導体装置およびその製造方法
JP2013157498A (ja) * 2012-01-31 2013-08-15 Renesas Electronics Corp 半導体装置及びその製造方法
JP2015537383A (ja) * 2012-11-07 2015-12-24 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造
JP2017022395A (ja) * 2012-11-07 2017-01-26 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造
JP2018125542A (ja) * 2012-11-07 2018-08-09 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造

Also Published As

Publication number Publication date
US8071448B2 (en) 2011-12-06
JP5110079B2 (ja) 2012-12-26
US8692331B2 (en) 2014-04-08
JPWO2008114341A1 (ja) 2010-06-24
US20120043613A1 (en) 2012-02-23
US20090309141A1 (en) 2009-12-17
US20130292749A1 (en) 2013-11-07
US8507990B2 (en) 2013-08-13

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