NO20052878L - Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning - Google Patents

Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning

Info

Publication number
NO20052878L
NO20052878L NO20052878A NO20052878A NO20052878L NO 20052878 L NO20052878 L NO 20052878L NO 20052878 A NO20052878 A NO 20052878A NO 20052878 A NO20052878 A NO 20052878A NO 20052878 L NO20052878 L NO 20052878L
Authority
NO
Norway
Prior art keywords
memory device
manufacture
ferroelectric memory
electrode sets
memory
Prior art date
Application number
NO20052878A
Other languages
English (en)
Other versions
NO324539B1 (no
NO20052878D0 (no
Inventor
Goran Gustafsson
Peter Dyreklev
Geirr I Leistad
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20052878A priority Critical patent/NO324539B1/no
Publication of NO20052878D0 publication Critical patent/NO20052878D0/no
Priority to JP2008516771A priority patent/JP2008544519A/ja
Priority to KR1020077030552A priority patent/KR20080012999A/ko
Priority to EP06747667A priority patent/EP1894203B1/en
Priority to AT06747667T priority patent/ATE523881T1/de
Priority to US11/922,052 priority patent/US20090285981A1/en
Priority to CN2006800212494A priority patent/CN101199021B/zh
Priority to PCT/NO2006/000215 priority patent/WO2006135246A1/en
Publication of NO20052878L publication Critical patent/NO20052878L/no
Publication of NO324539B1 publication Critical patent/NO324539B1/no
Priority to JP2012054625A priority patent/JP2012178566A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Printing Methods (AREA)
  • Non-Volatile Memory (AREA)
NO20052878A 2005-06-14 2005-06-14 Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning NO324539B1 (no)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NO20052878A NO324539B1 (no) 2005-06-14 2005-06-14 Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
PCT/NO2006/000215 WO2006135246A1 (en) 2005-06-14 2006-06-08 A method in the fabrication of a ferroelectric memory device
AT06747667T ATE523881T1 (de) 2005-06-14 2006-06-08 Verfahren bei der herstellung eines ferroelektrischen speicherbausteins
KR1020077030552A KR20080012999A (ko) 2005-06-14 2006-06-08 강유전체 메모리 소자의 제조 방법
EP06747667A EP1894203B1 (en) 2005-06-14 2006-06-08 A method in the fabrication of a ferroelectric memory device
JP2008516771A JP2008544519A (ja) 2005-06-14 2006-06-08 強誘電体メモリ・デバイスの作製方法
US11/922,052 US20090285981A1 (en) 2005-06-14 2006-06-08 Method in the fabrication of a ferroelectric memory device
CN2006800212494A CN101199021B (zh) 2005-06-14 2006-06-08 制作铁电存储器件的方法
JP2012054625A JP2012178566A (ja) 2005-06-14 2012-03-12 強誘電体メモリ・デバイスの作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20052878A NO324539B1 (no) 2005-06-14 2005-06-14 Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning

Publications (3)

Publication Number Publication Date
NO20052878D0 NO20052878D0 (no) 2005-06-14
NO20052878L true NO20052878L (no) 2006-12-15
NO324539B1 NO324539B1 (no) 2007-11-19

Family

ID=35295080

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20052878A NO324539B1 (no) 2005-06-14 2005-06-14 Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning

Country Status (8)

Country Link
US (1) US20090285981A1 (no)
EP (1) EP1894203B1 (no)
JP (2) JP2008544519A (no)
KR (1) KR20080012999A (no)
CN (1) CN101199021B (no)
AT (1) ATE523881T1 (no)
NO (1) NO324539B1 (no)
WO (1) WO2006135246A1 (no)

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JP2007184462A (ja) * 2006-01-10 2007-07-19 Agfa Gevaert Nv 強誘電性記憶素子、その素子を含むデバイス及びその製法
CN101359633B (zh) * 2007-07-30 2012-12-26 徐海生 射频识别芯片制造方法
CN101359592B (zh) * 2007-07-30 2012-05-30 徐海生 铁电随机存取芯片制造方法
CN101359665B (zh) * 2007-07-30 2011-12-28 徐海生 铁电随机存取芯片
FR2925765B1 (fr) * 2007-12-21 2009-12-04 E2V Semiconductors Procede de fabrication de capteurs a couche de co-polymere p(vdf-trfe) et capteur correspondant
SG157268A1 (en) * 2008-05-30 2009-12-29 Sony Corp Ferroelectric polymer
KR101245278B1 (ko) * 2009-08-07 2013-03-19 주식회사 엘지화학 전도성 기판 및 이의 제조 방법
JP5674520B2 (ja) * 2011-03-24 2015-02-25 株式会社東芝 有機分子メモリの製造方法
CN106876398B (zh) 2011-06-27 2020-10-20 薄膜电子有限公司 含横向尺寸改变吸收缓冲层的铁电存储单元及其制造方法
CN103620681B (zh) * 2011-06-27 2016-11-02 薄膜电子有限公司 具有横向尺寸改变吸收缓冲层的电子部件及其生产方法
KR101303086B1 (ko) * 2012-02-01 2013-09-04 한국과학기술원 강유전 고분자 박막을 이용한 정보 저장 매체의 제조방법
FR3004854B1 (fr) * 2013-04-19 2015-04-17 Arkema France Dispositif de memoire ferroelectrique
JP6229532B2 (ja) * 2014-02-21 2017-11-15 国立研究開発法人産業技術総合研究所 有機強誘電体薄膜の製造方法
KR101765529B1 (ko) 2014-02-27 2017-08-07 서울대학교산학협력단 신축성 및 연성 전자 소자 및 이의 제조 방법
CN104409632B (zh) * 2014-05-31 2017-05-10 福州大学 一种多层结构有机阻变存储器的3d打印制备方法
JP5739042B2 (ja) * 2014-06-06 2015-06-24 株式会社東芝 有機分子メモリ
FR3024303B1 (fr) * 2014-07-24 2016-08-26 Commissariat Energie Atomique Procede ameliore de realisation d'un generateur tribo-electrique a polymere dielectrique rugueux
EP3231020A1 (en) * 2014-12-10 2017-10-18 King Abdullah University Of Science And Technology All-printed paper-based memory
US9853088B2 (en) 2014-12-31 2017-12-26 King Abdullah University Of Science And Technology All-printed paper memory
KR101823730B1 (ko) * 2015-07-14 2018-01-31 한국과학기술원 수용성 기판을 이용하는 폐기 가능한 메모리 및 그 제작 방법
WO2017090559A1 (ja) 2015-11-25 2017-06-01 東レ株式会社 強誘電体記憶素子、その製造方法、ならびにそれを用いたメモリセルおよびそれを用いた無線通信装置
EP3185658A1 (de) * 2015-12-23 2017-06-28 Voestalpine Stahl GmbH Metallband und coil-coating-verfahren
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10396085B2 (en) 2017-03-06 2019-08-27 Xerox Corporation Circular printed memory device with rotational detection
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
CN107221532B (zh) * 2017-05-12 2018-11-13 南京理工大学 一种透明柔性氧化物铁电存储器
US9928893B1 (en) * 2017-06-05 2018-03-27 Xerox Corporation Circular printed memory system and method having robustness to orientation
US10396124B2 (en) 2017-07-05 2019-08-27 Xerox Corporation Memory cells and devices
US10249625B1 (en) 2018-07-18 2019-04-02 Xerox Corporation Coated printed electronic devices exhibiting improved yield
US10304836B1 (en) 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10593684B2 (en) 2018-07-18 2020-03-17 Xerox Corporation Printed electronic devices exhibiting improved yield
US11393832B2 (en) * 2020-07-15 2022-07-19 Ferroelectric Memory Gmbh Memory cell arrangement
CN113745261B (zh) * 2021-07-21 2023-08-11 湖南大学 一种Micro-LED光信息传感与存储单元、光子集成芯片、阵列及制备方法

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Also Published As

Publication number Publication date
JP2012178566A (ja) 2012-09-13
KR20080012999A (ko) 2008-02-12
CN101199021B (zh) 2012-09-05
NO324539B1 (no) 2007-11-19
EP1894203A1 (en) 2008-03-05
ATE523881T1 (de) 2011-09-15
CN101199021A (zh) 2008-06-11
WO2006135246A1 (en) 2006-12-21
NO20052878D0 (no) 2005-06-14
JP2008544519A (ja) 2008-12-04
EP1894203B1 (en) 2011-09-07
US20090285981A1 (en) 2009-11-19

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