JP5674520B2 - 有機分子メモリの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000002052 molecular layer Substances 0.000 claims description 88
- 239000000463 material Substances 0.000 claims description 43
- 239000007772 electrode material Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 61
- 230000008859 change Effects 0.000 description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 21
- 239000010931 gold Substances 0.000 description 21
- 229910052750 molybdenum Inorganic materials 0.000 description 21
- 239000011733 molybdenum Substances 0.000 description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000003491 array Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000005641 tunneling Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 230000003915 cell function Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/671—Organic radiation-sensitive molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Semiconductor Memories (AREA)
Description
本実施の形態の有機分子メモリは、第1の電極配線と、第1の電極配線と交差し、第1の電極配線と異なる材料で形成される第2の電極配線と、第1の電極配線と第2の電極配線との交差部の、第1の電極配線と第2の電極配線との間に設けられる有機分子層を備える。そして、この有機分子層を構成する抵抗変化型分子鎖の一端が第1の電極配線と化学結合し、他端と第2の電極配線との間に空隙が存在する。
d=a−(b+c)・・・(式1)
(上記一般式1において、XとYの組み合わせが、フッ素(F)・塩素(Cl)・臭素(Br)・ヨウ素(I)・シアノ基(CN)・ニトロ基(NO2)・アミノ基(NH2)・水酸基(OH)・カルボニル基(CO)・カルボキシ基(COOH)の任意の2つである。また、Rn(n=1〜8)は最外殻電子がd電子・f電子の原子を除く、任意の原子および特性基(例えば水素(H)・フッ素(F)・塩素(Cl)・臭素(Br)・ヨウ素(I)・メチル基(CH3))のいずれかである。)
本実施の形態の有機分子メモリは、有機分子メモリのセルアレイが積層構造となっている点で第1の実施の形態と異なっている。有機分子層を構成する抵抗変化型分子鎖、電極材料、基板の材料等については第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記述を省略する。
本実施の形態の有機分子メモリは、有機分子メモリのセルアレイが積層構造となっている点で第1の実施の形態と異なっている。また、第1の有機分子層と第2の有機分子層とを構成する抵抗変化型分子鎖の向きが揃っている点で第2の実施の形態と異なっている。有機分子層を構成する抵抗変化型分子鎖、電極材料、基板の材料等については第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記述を省略する。
本実施の形態の有機分子メモリは、有機分子層と電極配線との間にダイオード素子が形成されること以外は、基本的に第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については記述を省略する。
本実施の形態の有機分子メモリは、第1の電極と、第1の電極と異なる材料で形成される第2の電極と、第1の電極と第2の電極との間に設けられる有機分子層を備える。そして、上記有機分子層を構成する抵抗変化型分子鎖の一端が第1の電極と化学結合し、抵抗変化型分子鎖の他端と第2の電極との間に空隙が存在する。
12 下部電極配線(第1の電極または第1の電極配線)
14 上部電極配線(第2の電極または第2の電極配線)
16 有機分子層
16a 抵抗変化型分子鎖
20 空隙
22 絶縁層
36 犠牲層
42 第1の電極配線
44 第2の電極配線
46 第1の有機分子層
54 第3の電極配線
56 第2の有機分子層
Claims (2)
- 第1の電極を形成し、
前記第1の電極と異なる材料の第2の電極を形成し、
前記第1の電極上に、前記第1の電極と前記第2の電極間の間隔よりも長さの短い抵抗変化型分子鎖を選択的に化学結合させて、前記第1の電極と前記第2の電極との間に有機分子層を形成することを特徴とする有機分子メモリの製造方法。 - 基板上に第1の電極材料を形成し、
前記第1の電極材料上に犠牲層を形成し、
前記犠牲層上に前記第1の電極材料と異なる第2の電極材料を形成し、
前記第2の電極材料と前記犠牲層を第1の方向に伸長する複数のラインとなるようパターニングし、
前記第2の電極材料と前記犠牲層の間のスペースを第1の絶縁膜で埋め込み、
前記第1の電極材料が前記第1の方向と交差する第2の方向に伸長する複数のラインとなるよう、前記第2の電極材料、前記犠牲層、前記第1の絶縁膜、および、前記第1の電極材料をパターニングし、
前記犠牲層を、前記第1の電極材料、前記第2の電極材料、および、前記第1の絶縁膜に対し選択的に除去し、
前記第1の電極材料上に前記犠牲層の厚さよりも長さの短い抵抗変化型分子鎖を選択的に化学結合させて、有機分子層を形成し、
前記第1の電極材料の間、前記有機分子層の間、前記第2の電極材料の間のスペースを、第2の絶縁膜で埋め込み、
前記第2の電極材料上に第3の電極材料を形成し、
前記第3の電極材料を、前記第2の電極材料に接続され、前記第1の方向に伸長する複数のラインとなるようパターニングすることを特徴とする有機分子メモリの製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011065527A JP5674520B2 (ja) | 2011-03-24 | 2011-03-24 | 有機分子メモリの製造方法 |
CN2011800683008A CN103403904A (zh) | 2011-03-24 | 2011-09-20 | 有机分子存储器及其生产方法 |
PCT/JP2011/005274 WO2012127542A1 (en) | 2011-03-24 | 2011-09-20 | Organic molecular memory and method of manufacturing the same |
EP11861580.6A EP2689478A4 (en) | 2011-03-24 | 2011-09-20 | ORGANIC MOLECULAR MEMORY AND MANUFACTURING METHOD THEREFOR |
TW103119713A TWI524564B (zh) | 2011-03-24 | 2011-09-23 | 有機分子記憶體 |
TW100134400A TWI515934B (zh) | 2011-03-24 | 2011-09-23 | 有機分子記憶體之製造方法 |
US14/035,532 US8975622B2 (en) | 2011-03-24 | 2013-09-24 | Organic molecular memory and method of manufacturing the same |
US14/578,618 US9172053B2 (en) | 2011-03-24 | 2014-12-22 | Organic molecular memory and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011065527A JP5674520B2 (ja) | 2011-03-24 | 2011-03-24 | 有機分子メモリの製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014118043A Division JP5739042B2 (ja) | 2014-06-06 | 2014-06-06 | 有機分子メモリ |
Publications (2)
Publication Number | Publication Date |
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JP2012204446A JP2012204446A (ja) | 2012-10-22 |
JP5674520B2 true JP5674520B2 (ja) | 2015-02-25 |
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Family Applications (1)
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JP2011065527A Expired - Fee Related JP5674520B2 (ja) | 2011-03-24 | 2011-03-24 | 有機分子メモリの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8975622B2 (ja) |
EP (1) | EP2689478A4 (ja) |
JP (1) | JP5674520B2 (ja) |
CN (1) | CN103403904A (ja) |
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JP5779138B2 (ja) | 2012-06-07 | 2015-09-16 | 株式会社東芝 | 分子メモリ |
CN104393011A (zh) * | 2014-11-25 | 2015-03-04 | 上海集成电路研发中心有限公司 | 柔性阻变存储器、单元结构及制备方法 |
KR20180081102A (ko) * | 2015-11-06 | 2018-07-13 | 카버 싸이언티픽, 아이엔씨. | 일렉트로엔트로픽 메모리 디바이스 |
DE102017005884A1 (de) | 2016-07-07 | 2018-01-11 | Merck Patent Gmbh | Elektronisches Schaltelement |
US10703692B2 (en) | 2017-02-06 | 2020-07-07 | Raytheon Company | Solid state materials with tunable dielectric response and rotational anisotropy |
JP2019054207A (ja) * | 2017-09-19 | 2019-04-04 | 東芝メモリ株式会社 | 記憶装置及び記憶装置の製造方法 |
DE102018004733A1 (de) | 2018-06-14 | 2019-12-19 | Merck Patent Gmbh | Verfahren zur Herstellung eines elektronischen Bauteils enthaltend eine selbstorganisierte Monolage |
JP2022532554A (ja) | 2019-05-09 | 2022-07-15 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | ダイヤモンドイド化合物 |
JP2022532553A (ja) | 2019-05-09 | 2022-07-15 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 芳香族化合物 |
CN110718631A (zh) * | 2019-10-12 | 2020-01-21 | 西南交通大学 | 一种低能耗、高可靠的生物忆阻器的制备方法 |
EP3813132A1 (en) | 2019-10-21 | 2021-04-28 | Merck Patent GmbH | Electronic switching device |
CN114616686A (zh) | 2019-10-29 | 2022-06-10 | 默克专利有限公司 | 制造分子层的方法和包含其的电子组件 |
CN111427111A (zh) * | 2020-03-30 | 2020-07-17 | Tcl华星光电技术有限公司 | 量子点图案化方法、装置及系统 |
EP4174077A1 (en) | 2021-10-27 | 2023-05-03 | Merck Patent GmbH | Electronic switching device |
JP2023081627A (ja) * | 2021-12-01 | 2023-06-13 | キオクシア株式会社 | 有機分子メモリ |
IL300665A (en) | 2022-03-16 | 2023-10-01 | Merck Patent Gmbh | Electronic switching device |
TW202347336A (zh) | 2022-03-16 | 2023-12-01 | 德商馬克專利公司 | 電子切換裝置 |
CN115747721A (zh) * | 2022-10-31 | 2023-03-07 | 浙江大学杭州国际科创中心 | 一种单层有机纳米薄膜及其制备和表征方法 |
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JP2003297386A (ja) | 2002-04-08 | 2003-10-17 | Nisshinbo Ind Inc | 燃料電池セパレータ及びその製造方法 |
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KR20080036771A (ko) | 2006-10-24 | 2008-04-29 | 삼성전자주식회사 | 유기층 패턴 형성방법, 그에 의해 형성된 유기층 및 그를포함하는 유기 메모리 소자 |
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JP5356066B2 (ja) | 2009-02-24 | 2013-12-04 | 株式会社東芝 | スイッチング素子及び不揮発性記憶装置 |
JP5380481B2 (ja) * | 2011-03-07 | 2014-01-08 | 株式会社東芝 | 記憶装置およびその製造方法 |
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Publication number | Publication date |
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US8975622B2 (en) | 2015-03-10 |
EP2689478A4 (en) | 2014-11-12 |
JP2012204446A (ja) | 2012-10-22 |
US20140021438A1 (en) | 2014-01-23 |
TW201240175A (en) | 2012-10-01 |
TWI515934B (zh) | 2016-01-01 |
TW201436324A (zh) | 2014-09-16 |
US20150108421A1 (en) | 2015-04-23 |
WO2012127542A1 (en) | 2012-09-27 |
TWI524564B (zh) | 2016-03-01 |
US9172053B2 (en) | 2015-10-27 |
CN103403904A (zh) | 2013-11-20 |
EP2689478A1 (en) | 2014-01-29 |
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