NO20001360D0 - Vertikale elektriske forbindelser i stabel - Google Patents

Vertikale elektriske forbindelser i stabel

Info

Publication number
NO20001360D0
NO20001360D0 NO20001360A NO20001360A NO20001360D0 NO 20001360 D0 NO20001360 D0 NO 20001360D0 NO 20001360 A NO20001360 A NO 20001360A NO 20001360 A NO20001360 A NO 20001360A NO 20001360 D0 NO20001360 D0 NO 20001360D0
Authority
NO
Norway
Prior art keywords
layers
edge
stack
electrical
substrate
Prior art date
Application number
NO20001360A
Other languages
English (en)
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20001360A priority Critical patent/NO20001360D0/no
Publication of NO20001360D0 publication Critical patent/NO20001360D0/no
Priority to RU2002125873A priority patent/RU2237948C2/ru
Priority to PCT/NO2001/000113 priority patent/WO2001069679A1/en
Priority to CNB018065473A priority patent/CN1214462C/zh
Priority to US09/926,531 priority patent/US20030024731A1/en
Priority to HK03106866.5A priority patent/HK1054615B/xx
Priority to CA002403231A priority patent/CA2403231C/en
Priority to JP2001567041A priority patent/JP2003526945A/ja
Priority to NO20011330A priority patent/NO313679B1/no
Priority to AU44877/01A priority patent/AU775011B2/en
Priority to EP01918005A priority patent/EP1287560A1/en
Priority to KR10-2002-7012015A priority patent/KR100488256B1/ko
Priority to US10/390,178 priority patent/US7211885B2/en
Priority to JP2008030771A priority patent/JP2008177589A/ja
Priority to JP2008030748A priority patent/JP2008182252A/ja

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
NO20001360A 2000-03-15 2000-03-15 Vertikale elektriske forbindelser i stabel NO20001360D0 (no)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NO20001360A NO20001360D0 (no) 2000-03-15 2000-03-15 Vertikale elektriske forbindelser i stabel
KR10-2002-7012015A KR100488256B1 (ko) 2000-03-15 2001-03-15 적층부내의 수직 전기적 상호접속부
CA002403231A CA2403231C (en) 2000-03-15 2001-03-15 Vertical electrical interconnections in a stack
NO20011330A NO313679B1 (no) 2000-03-15 2001-03-15 Vertikale elektriske forbindelser i en stabel
CNB018065473A CN1214462C (zh) 2000-03-15 2001-03-15 叠层中的垂直电互连
US09/926,531 US20030024731A1 (en) 2000-03-15 2001-03-15 Vertical electrical interconnections in a stack
HK03106866.5A HK1054615B (en) 2000-03-15 2001-03-15 Vertical electrical interconnections in a stack
RU2002125873A RU2237948C2 (ru) 2000-03-15 2001-03-15 Устройство памяти и/или обработки данных и способ его изготовления
JP2001567041A JP2003526945A (ja) 2000-03-15 2001-03-15 スタックにおける電気的相互垂直接続
PCT/NO2001/000113 WO2001069679A1 (en) 2000-03-15 2001-03-15 Vertical electrical interconnections in a stack
AU44877/01A AU775011B2 (en) 2000-03-15 2001-03-15 Vertical electrical interconnections in a stack
EP01918005A EP1287560A1 (en) 2000-03-15 2001-03-15 Vertical electrical interconnections in a stack
US10/390,178 US7211885B2 (en) 2000-03-15 2003-03-14 Vertical electrical interconnections in a stack
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Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
JP3838218B2 (ja) 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
US6959134B2 (en) * 2003-06-30 2005-10-25 Intel Corporation Measuring the position of passively aligned optical components
JP3801160B2 (ja) * 2003-09-11 2006-07-26 セイコーエプソン株式会社 半導体素子、半導体装置、半導体素子の製造方法、半導体装置の製造方法及び電子機器
JP2005093703A (ja) * 2003-09-17 2005-04-07 Seiko Epson Corp タイル状素子用配線形成方法、タイル状素子用配線構造物及び電子機器
JP4206885B2 (ja) 2003-09-26 2009-01-14 ソニー株式会社 半導体装置の製造方法
WO2005036610A2 (en) * 2003-10-10 2005-04-21 Silicon Pipe, Inc. Multi-surface contact ic packaging structures and assemblies
US7280372B2 (en) * 2003-11-13 2007-10-09 Silicon Pipe Stair step printed circuit board structures for high speed signal transmissions
US7652381B2 (en) 2003-11-13 2010-01-26 Interconnect Portfolio Llc Interconnect system without through-holes
NO320176B1 (no) * 2004-02-03 2005-11-07 Kim Oyhus Stablede lag av gitter-minne koblet til integrert krets.
US7278855B2 (en) 2004-02-09 2007-10-09 Silicon Pipe, Inc High speed, direct path, stair-step, electronic connectors with improved signal integrity characteristics and methods for their manufacture
DE102004008135A1 (de) * 2004-02-18 2005-09-22 Infineon Technologies Ag Halbleiterbauteil mit einem Stapel aus Halbleiterchips und Verfahren zur Herstellung desselben
TW200530655A (en) * 2004-03-05 2005-09-16 Toppoly Optoelectronics Corp Display panel, lead pad structure, lead pad array structure and method of fabricating the same
JP2006303408A (ja) * 2004-09-09 2006-11-02 Seiko Epson Corp 電子装置及びその製造方法
JP3992038B2 (ja) * 2004-11-16 2007-10-17 セイコーエプソン株式会社 電子素子の実装方法、電子装置の製造方法、回路基板、電子機器
JP2006270009A (ja) * 2005-02-25 2006-10-05 Seiko Epson Corp 電子装置の製造方法
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
US7706165B2 (en) * 2005-12-20 2010-04-27 Agfa-Gevaert Nv Ferroelectric passive memory cell, device and method of manufacture thereof
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7829438B2 (en) * 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
JP5018024B2 (ja) * 2006-11-08 2012-09-05 セイコーエプソン株式会社 電子部品の実装方法、電子基板、及び電子機器
US8461672B2 (en) 2007-07-27 2013-06-11 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
JP4940063B2 (ja) * 2007-08-28 2012-05-30 株式会社東芝 半導体装置およびその製造方法
JP2009094432A (ja) * 2007-10-12 2009-04-30 Toshiba Corp 積層型半導体パッケージの製造方法
JP5126002B2 (ja) 2008-11-11 2013-01-23 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法
US9082438B2 (en) 2008-12-02 2015-07-14 Panasonic Corporation Three-dimensional structure for wiring formation
US8482137B2 (en) * 2009-01-27 2013-07-09 Panasonic Corporation Method of mounting semiconductor chips, semiconductor device obtained using the method, method of connecting semiconductor chips, three-dimensional structure in which wiring is provided on its surface, and method of producing the same
US9070393B2 (en) 2009-01-27 2015-06-30 Panasonic Corporation Three-dimensional structure in which wiring is provided on its surface
US8476749B2 (en) * 2009-07-22 2013-07-02 Oracle America, Inc. High-bandwidth ramp-stack chip package
GB0913456D0 (en) * 2009-08-03 2009-09-16 Cambridge Entpr Ltd Printed electronic device
TW201203041A (en) * 2010-03-05 2012-01-16 Canatu Oy A touch sensitive film and a touch sensing device
JP5289484B2 (ja) * 2011-03-04 2013-09-11 株式会社東芝 積層型半導体装置の製造方法
US8765598B2 (en) * 2011-06-02 2014-07-01 Micron Technology, Inc. Conductive structures, systems and devices including conductive structures and related methods
US9090384B2 (en) 2011-11-25 2015-07-28 Hoffmann Neopac Ag Insert for a tube for dispensing liquid content and tube with such an insert
DE102012024599B4 (de) * 2011-12-20 2020-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung mit optisch transparenten und funktionalen Bauelementen
US20130234330A1 (en) * 2012-03-08 2013-09-12 Infineon Technologies Ag Semiconductor Packages and Methods of Formation Thereof
DE112013002288T5 (de) 2012-05-03 2015-04-16 Apple Inc. Momentkompensierter Biegebalkensensor zur Lastmessung auf einer Biegebalken-gestützten Plattform
US9082632B2 (en) 2012-05-10 2015-07-14 Oracle International Corporation Ramp-stack chip package with variable chip spacing
US9891759B2 (en) 2012-09-28 2018-02-13 Apple Inc. Frustrated total internal reflection and capacitive sensing
US10817096B2 (en) 2014-02-06 2020-10-27 Apple Inc. Force sensor incorporated into display
WO2014092758A1 (en) 2012-12-14 2014-06-19 Changello Enterprise Llc Force sensing through capacitance changes
US9983715B2 (en) 2012-12-17 2018-05-29 Apple Inc. Force detection in touch devices using piezoelectric sensors
KR102190382B1 (ko) 2012-12-20 2020-12-11 삼성전자주식회사 반도체 패키지
JP2014130877A (ja) * 2012-12-28 2014-07-10 Yamaha Corp 半導体装置及びその製造方法
CN103325767B (zh) * 2013-02-07 2015-07-08 程君 一种集成化半导体显示板
EP2954392B1 (en) 2013-02-08 2022-12-28 Apple Inc. Force determination based on capacitive sensing
CN103985683B (zh) * 2013-02-08 2017-04-12 精材科技股份有限公司 晶片封装体
US9351400B1 (en) 2013-02-21 2016-05-24 Apple Inc. Electrical connections between conductive contacts
WO2014164477A1 (en) 2013-03-12 2014-10-09 Apple Inc. Lowering the sheet resistance of a conductive layer
US9851828B2 (en) 2013-03-15 2017-12-26 Apple Inc. Touch force deflection sensor
US9952703B2 (en) 2013-03-15 2018-04-24 Apple Inc. Force sensing of inputs through strain analysis
WO2014143065A1 (en) 2013-03-15 2014-09-18 Rinand Solutions Llc Force-sensitive fingerprint sensing input
US9638591B1 (en) 2013-05-24 2017-05-02 Apple Inc. Display area force sensing using Bragg grating based wave guide sensors
TWI489922B (zh) * 2013-07-15 2015-06-21 Mpi Corp Multilayer circuit boards
US9671889B1 (en) 2013-07-25 2017-06-06 Apple Inc. Input member with capacitive sensor
WO2015066086A1 (en) 2013-10-28 2015-05-07 Changello Enterprise Llc Piezo based force sensing
AU2015100011B4 (en) 2014-01-13 2015-07-16 Apple Inc. Temperature compensating transparent force sensor
AU2015217268B2 (en) 2014-02-12 2018-03-01 Apple Inc. Force determination employing sheet sensor and capacitive array
US10198123B2 (en) 2014-04-21 2019-02-05 Apple Inc. Mitigating noise in capacitive sensor
EP3199003B1 (en) * 2014-09-24 2021-01-06 TRUMPF Photonic Components GmbH Printed circuit board and printed circuit board arrangement
US10006937B2 (en) 2015-03-06 2018-06-26 Apple Inc. Capacitive sensors for electronic devices and methods of forming the same
US9691820B2 (en) * 2015-04-24 2017-06-27 Sony Semiconductor Solutions Corporation Block architecture for vertical memory array
US10161814B2 (en) 2015-05-27 2018-12-25 Apple Inc. Self-sealing sensor in an electronic device
US9612170B2 (en) 2015-07-21 2017-04-04 Apple Inc. Transparent strain sensors in an electronic device
US10055048B2 (en) 2015-07-31 2018-08-21 Apple Inc. Noise adaptive force touch
US9715301B2 (en) 2015-08-04 2017-07-25 Apple Inc. Proximity edge sensing
US9874965B2 (en) 2015-09-11 2018-01-23 Apple Inc. Transparent strain sensors in an electronic device
US9886118B2 (en) 2015-09-30 2018-02-06 Apple Inc. Transparent force sensitive structures in an electronic device
US10019085B2 (en) 2015-09-30 2018-07-10 Apple Inc. Sensor layer having a patterned compliant layer
WO2017143242A1 (en) 2016-02-19 2017-08-24 Apple Inc. Force sensing architectures
US10006820B2 (en) 2016-03-08 2018-06-26 Apple Inc. Magnetic interference avoidance in resistive sensors
US9941209B2 (en) 2016-03-11 2018-04-10 Micron Technology, Inc. Conductive structures, systems and devices including conductive structures and related methods
JP2017168641A (ja) 2016-03-16 2017-09-21 東芝メモリ株式会社 不揮発性半導体記憶装置及びその製造方法
US10209830B2 (en) 2016-03-31 2019-02-19 Apple Inc. Electronic device having direction-dependent strain elements
US10007343B2 (en) 2016-03-31 2018-06-26 Apple Inc. Force sensor in an input device
US10090320B2 (en) 2016-05-19 2018-10-02 Toshiba Memory Corporation Semiconductor device and method for manufacturing the same
US10133418B2 (en) 2016-09-07 2018-11-20 Apple Inc. Force sensing in an electronic device using a single layer of strain-sensitive structures
US10444091B2 (en) 2017-04-11 2019-10-15 Apple Inc. Row column architecture for strain sensing
US10309846B2 (en) 2017-07-24 2019-06-04 Apple Inc. Magnetic field cancellation for strain sensors
CN107613665B (zh) * 2017-08-11 2020-08-21 惠州市超频三全周光智能照明科技有限公司 多层导通构造加工方法、线性电路板加工方法及线光源
CN107567206B (zh) * 2017-08-11 2020-11-10 惠州市超频三全周光智能照明科技有限公司 双面导通构造加工方法、线性电路板加工方法及线光源
CN108257878A (zh) * 2018-01-11 2018-07-06 郑州云海信息技术有限公司 一种增强qfn封装焊接效果的方法及qfn封装
US10866683B2 (en) 2018-08-27 2020-12-15 Apple Inc. Force or touch sensing on a mobile device using capacitive or pressure sensing
US10782818B2 (en) 2018-08-29 2020-09-22 Apple Inc. Load cell array for detection of force input to an electronic device enclosure
US11024551B1 (en) 2020-01-07 2021-06-01 International Business Machines Corporation Metal replacement vertical interconnections for buried capacitance
US11490519B2 (en) 2021-01-11 2022-11-01 X-Celeprint Limited Printed stacked micro-devices
US12142656B2 (en) 2021-12-03 2024-11-12 International Business Machines Corporation Staggered stacked semiconductor devices
US12216153B2 (en) * 2022-03-21 2025-02-04 Avago Technologies International Sales Pte. Limited Semiconductor product with edge integrity detection structure
US20240243101A1 (en) * 2023-01-18 2024-07-18 Western Digital Technologies, Inc. Stacked chip scale semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178547A (ja) * 1982-04-12 1983-10-19 Matsushita Electric Ind Co Ltd 電気部品組立体およびその製造方法
SU1616439A1 (ru) * 1989-02-03 1996-01-20 Д.М. Боднарь Способ создания многоуровневых межсоединений интегральных схем
US5093708A (en) * 1990-08-20 1992-03-03 Grumman Aerospace Corporation Multilayer integrated circuit module
US5311401A (en) * 1991-07-09 1994-05-10 Hughes Aircraft Company Stacked chip assembly and manufacturing method therefor
US5422435A (en) * 1992-05-22 1995-06-06 National Semiconductor Corporation Stacked multi-chip modules and method of manufacturing
US5969380A (en) 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
FR2751328B1 (fr) * 1996-07-17 1998-10-09 Oxis International Sa Utilisation de nouveaux composes organoselenies comme agents pro-oxydants ainsi que leurs procedes de preparation et des compositions pharmaceutiques en comportant application
JP3565319B2 (ja) * 1999-04-14 2004-09-15 シャープ株式会社 半導体装置及びその製造方法
JP3765952B2 (ja) * 1999-10-19 2006-04-12 富士通株式会社 半導体装置
US6376904B1 (en) * 1999-12-23 2002-04-23 Rambus Inc. Redistributed bond pads in stacked integrated circuit die package
US6621155B1 (en) * 1999-12-23 2003-09-16 Rambus Inc. Integrated circuit device having stacked dies and impedance balanced transmission lines
US6664639B2 (en) * 2000-12-22 2003-12-16 Matrix Semiconductor, Inc. Contact and via structure and method of fabrication

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