ATE523881T1 - Verfahren bei der herstellung eines ferroelektrischen speicherbausteins - Google Patents

Verfahren bei der herstellung eines ferroelektrischen speicherbausteins

Info

Publication number
ATE523881T1
ATE523881T1 AT06747667T AT06747667T ATE523881T1 AT E523881 T1 ATE523881 T1 AT E523881T1 AT 06747667 T AT06747667 T AT 06747667T AT 06747667 T AT06747667 T AT 06747667T AT E523881 T1 ATE523881 T1 AT E523881T1
Authority
AT
Austria
Prior art keywords
producing
ferroelectric memory
memory component
electrode sets
memory device
Prior art date
Application number
AT06747667T
Other languages
English (en)
Inventor
Peter Dyreklev
Geirr Leistad
Goeran Gustafsson
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of ATE523881T1 publication Critical patent/ATE523881T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
AT06747667T 2005-06-14 2006-06-08 Verfahren bei der herstellung eines ferroelektrischen speicherbausteins ATE523881T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20052878A NO324539B1 (no) 2005-06-14 2005-06-14 Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
PCT/NO2006/000215 WO2006135246A1 (en) 2005-06-14 2006-06-08 A method in the fabrication of a ferroelectric memory device

Publications (1)

Publication Number Publication Date
ATE523881T1 true ATE523881T1 (de) 2011-09-15

Family

ID=35295080

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06747667T ATE523881T1 (de) 2005-06-14 2006-06-08 Verfahren bei der herstellung eines ferroelektrischen speicherbausteins

Country Status (8)

Country Link
US (1) US20090285981A1 (de)
EP (1) EP1894203B1 (de)
JP (2) JP2008544519A (de)
KR (1) KR20080012999A (de)
CN (1) CN101199021B (de)
AT (1) ATE523881T1 (de)
NO (1) NO324539B1 (de)
WO (1) WO2006135246A1 (de)

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JP5674520B2 (ja) 2011-03-24 2015-02-25 株式会社東芝 有機分子メモリの製造方法
EP2740122B1 (de) 2011-06-27 2016-08-31 Thin Film Electronics ASA Kurzschlussreduktion bei einer elektronischen komponente mit einem auf einem flexiblen substrat angeordneten schichtstapel
EP2724342B1 (de) 2011-06-27 2018-10-17 Xerox Corporation Kurzschlussreduktion in einer ferroelektrischen speicherzelle mit einem auf einem flexiblen substrat angeordneten schichtstapel
KR101303086B1 (ko) * 2012-02-01 2013-09-04 한국과학기술원 강유전 고분자 박막을 이용한 정보 저장 매체의 제조방법
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JP5739042B2 (ja) * 2014-06-06 2015-06-24 株式会社東芝 有機分子メモリ
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KR101823730B1 (ko) * 2015-07-14 2018-01-31 한국과학기술원 수용성 기판을 이용하는 폐기 가능한 메모리 및 그 제작 방법
JP6926475B2 (ja) 2015-11-25 2021-08-25 東レ株式会社 強誘電体記憶素子、その製造方法、ならびにそれを用いたメモリセルおよびそれを用いた無線通信装置
EP3185658A1 (de) * 2015-12-23 2017-06-28 Voestalpine Stahl GmbH Metallband und coil-coating-verfahren
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10396085B2 (en) 2017-03-06 2019-08-27 Xerox Corporation Circular printed memory device with rotational detection
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
CN107221532B (zh) * 2017-05-12 2018-11-13 南京理工大学 一种透明柔性氧化物铁电存储器
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JP2004247716A (ja) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp 積層体の製造方法
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US7675123B2 (en) * 2004-10-29 2010-03-09 Agfa-Gevaert Nv Printable non-volatile passive memory element and method of making thereof
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Also Published As

Publication number Publication date
EP1894203B1 (de) 2011-09-07
US20090285981A1 (en) 2009-11-19
CN101199021B (zh) 2012-09-05
KR20080012999A (ko) 2008-02-12
NO324539B1 (no) 2007-11-19
NO20052878D0 (no) 2005-06-14
JP2008544519A (ja) 2008-12-04
WO2006135246A1 (en) 2006-12-21
JP2012178566A (ja) 2012-09-13
CN101199021A (zh) 2008-06-11
NO20052878L (no) 2006-12-15
EP1894203A1 (de) 2008-03-05

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