NO324539B1 - Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning - Google Patents
Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning Download PDFInfo
- Publication number
- NO324539B1 NO324539B1 NO20052878A NO20052878A NO324539B1 NO 324539 B1 NO324539 B1 NO 324539B1 NO 20052878 A NO20052878 A NO 20052878A NO 20052878 A NO20052878 A NO 20052878A NO 324539 B1 NO324539 B1 NO 324539B1
- Authority
- NO
- Norway
- Prior art keywords
- printing
- procedure according
- memory
- layer
- ferroelectric
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000007639 printing Methods 0.000 claims abstract description 94
- 230000015654 memory Effects 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims description 40
- 229920000642 polymer Polymers 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 33
- 238000007641 inkjet printing Methods 0.000 claims description 18
- 229920001940 conductive polymer Polymers 0.000 claims description 15
- 239000000976 ink Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 12
- 229920001577 copolymer Polymers 0.000 claims description 11
- -1 poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 7
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229920000767 polyaniline Polymers 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000002322 conducting polymer Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 238000007645 offset printing Methods 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 229920000128 polypyrrole Polymers 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
- 238000007648 laser printing Methods 0.000 claims description 2
- 238000002174 soft lithography Methods 0.000 claims description 2
- 229920001897 terpolymer Polymers 0.000 claims description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims 1
- 229920001166 Poly(vinylidene fluoride-co-trifluoroethylene) Polymers 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 7
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- 230000008021 deposition Effects 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000000123 paper Substances 0.000 description 5
- XLOFNXVVMRAGLZ-UHFFFAOYSA-N 1,1-difluoroethene;1,1,2-trifluoroethene Chemical group FC(F)=C.FC=C(F)F XLOFNXVVMRAGLZ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000007774 anilox coating Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000131 polyvinylidene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- AFYCEAFSNDLKSX-UHFFFAOYSA-N coumarin 460 Chemical compound CC1=CC(=O)OC2=CC(N(CC)CC)=CC=C21 AFYCEAFSNDLKSX-UHFFFAOYSA-N 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
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- 239000000975 dye Substances 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Printing Methods (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20052878A NO324539B1 (no) | 2005-06-14 | 2005-06-14 | Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning |
KR1020077030552A KR20080012999A (ko) | 2005-06-14 | 2006-06-08 | 강유전체 메모리 소자의 제조 방법 |
JP2008516771A JP2008544519A (ja) | 2005-06-14 | 2006-06-08 | 強誘電体メモリ・デバイスの作製方法 |
EP06747667A EP1894203B1 (de) | 2005-06-14 | 2006-06-08 | Verfahren bei der herstellung eines ferroelektrischen speicherbausteins |
PCT/NO2006/000215 WO2006135246A1 (en) | 2005-06-14 | 2006-06-08 | A method in the fabrication of a ferroelectric memory device |
AT06747667T ATE523881T1 (de) | 2005-06-14 | 2006-06-08 | Verfahren bei der herstellung eines ferroelektrischen speicherbausteins |
US11/922,052 US20090285981A1 (en) | 2005-06-14 | 2006-06-08 | Method in the fabrication of a ferroelectric memory device |
CN2006800212494A CN101199021B (zh) | 2005-06-14 | 2006-06-08 | 制作铁电存储器件的方法 |
JP2012054625A JP2012178566A (ja) | 2005-06-14 | 2012-03-12 | 強誘電体メモリ・デバイスの作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20052878A NO324539B1 (no) | 2005-06-14 | 2005-06-14 | Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning |
Publications (3)
Publication Number | Publication Date |
---|---|
NO20052878D0 NO20052878D0 (no) | 2005-06-14 |
NO20052878L NO20052878L (no) | 2006-12-15 |
NO324539B1 true NO324539B1 (no) | 2007-11-19 |
Family
ID=35295080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20052878A NO324539B1 (no) | 2005-06-14 | 2005-06-14 | Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning |
Country Status (8)
Country | Link |
---|---|
US (1) | US20090285981A1 (de) |
EP (1) | EP1894203B1 (de) |
JP (2) | JP2008544519A (de) |
KR (1) | KR20080012999A (de) |
CN (1) | CN101199021B (de) |
AT (1) | ATE523881T1 (de) |
NO (1) | NO324539B1 (de) |
WO (1) | WO2006135246A1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007184462A (ja) * | 2006-01-10 | 2007-07-19 | Agfa Gevaert Nv | 強誘電性記憶素子、その素子を含むデバイス及びその製法 |
CN101359633B (zh) * | 2007-07-30 | 2012-12-26 | 徐海生 | 射频识别芯片制造方法 |
CN101359592B (zh) * | 2007-07-30 | 2012-05-30 | 徐海生 | 铁电随机存取芯片制造方法 |
CN101359665B (zh) * | 2007-07-30 | 2011-12-28 | 徐海生 | 铁电随机存取芯片 |
FR2925765B1 (fr) * | 2007-12-21 | 2009-12-04 | E2V Semiconductors | Procede de fabrication de capteurs a couche de co-polymere p(vdf-trfe) et capteur correspondant |
SG157268A1 (en) * | 2008-05-30 | 2009-12-29 | Sony Corp | Ferroelectric polymer |
KR101245278B1 (ko) * | 2009-08-07 | 2013-03-19 | 주식회사 엘지화학 | 전도성 기판 및 이의 제조 방법 |
JP5674520B2 (ja) | 2011-03-24 | 2015-02-25 | 株式会社東芝 | 有機分子メモリの製造方法 |
CN106876398B (zh) | 2011-06-27 | 2020-10-20 | 薄膜电子有限公司 | 含横向尺寸改变吸收缓冲层的铁电存储单元及其制造方法 |
US9934836B2 (en) | 2011-06-27 | 2018-04-03 | Thin Film Electronics Asa | Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate |
KR101303086B1 (ko) * | 2012-02-01 | 2013-09-04 | 한국과학기술원 | 강유전 고분자 박막을 이용한 정보 저장 매체의 제조방법 |
FR3004854B1 (fr) * | 2013-04-19 | 2015-04-17 | Arkema France | Dispositif de memoire ferroelectrique |
JP6229532B2 (ja) * | 2014-02-21 | 2017-11-15 | 国立研究開発法人産業技術総合研究所 | 有機強誘電体薄膜の製造方法 |
KR101765529B1 (ko) | 2014-02-27 | 2017-08-07 | 서울대학교산학협력단 | 신축성 및 연성 전자 소자 및 이의 제조 방법 |
CN104409632B (zh) * | 2014-05-31 | 2017-05-10 | 福州大学 | 一种多层结构有机阻变存储器的3d打印制备方法 |
JP5739042B2 (ja) * | 2014-06-06 | 2015-06-24 | 株式会社東芝 | 有機分子メモリ |
FR3024303B1 (fr) * | 2014-07-24 | 2016-08-26 | Commissariat Energie Atomique | Procede ameliore de realisation d'un generateur tribo-electrique a polymere dielectrique rugueux |
US10340448B2 (en) * | 2014-12-10 | 2019-07-02 | King Abdullah University Of Science And Technology | All-printed paper memory |
WO2016124969A2 (en) | 2014-12-31 | 2016-08-11 | King Abdullah University Of Science And Technology | All-printed paper memory |
KR101823730B1 (ko) * | 2015-07-14 | 2018-01-31 | 한국과학기술원 | 수용성 기판을 이용하는 폐기 가능한 메모리 및 그 제작 방법 |
CN108292630B (zh) | 2015-11-25 | 2023-04-25 | 东丽株式会社 | 铁电体存储元件、其制造方法、以及使用其的存储单元及使用其的无线通信装置 |
EP3185658A1 (de) * | 2015-12-23 | 2017-06-28 | Voestalpine Stahl GmbH | Metallband und coil-coating-verfahren |
US9886571B2 (en) | 2016-02-16 | 2018-02-06 | Xerox Corporation | Security enhancement of customer replaceable unit monitor (CRUM) |
US10396085B2 (en) * | 2017-03-06 | 2019-08-27 | Xerox Corporation | Circular printed memory device with rotational detection |
US10978169B2 (en) | 2017-03-17 | 2021-04-13 | Xerox Corporation | Pad detection through pattern analysis |
CN107221532B (zh) * | 2017-05-12 | 2018-11-13 | 南京理工大学 | 一种透明柔性氧化物铁电存储器 |
US9928893B1 (en) * | 2017-06-05 | 2018-03-27 | Xerox Corporation | Circular printed memory system and method having robustness to orientation |
US10396124B2 (en) | 2017-07-05 | 2019-08-27 | Xerox Corporation | Memory cells and devices |
US10304836B1 (en) * | 2018-07-18 | 2019-05-28 | Xerox Corporation | Protective layers for high-yield printed electronic devices |
US10249625B1 (en) | 2018-07-18 | 2019-04-02 | Xerox Corporation | Coated printed electronic devices exhibiting improved yield |
US10593684B2 (en) | 2018-07-18 | 2020-03-17 | Xerox Corporation | Printed electronic devices exhibiting improved yield |
US11393832B2 (en) * | 2020-07-15 | 2022-07-19 | Ferroelectric Memory Gmbh | Memory cell arrangement |
CN113745261B (zh) * | 2021-07-21 | 2023-08-11 | 湖南大学 | 一种Micro-LED光信息传感与存储单元、光子集成芯片、阵列及制备方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6420190B1 (en) * | 1999-06-04 | 2002-07-16 | Seiko Epson Corporation | Method of manufacturing ferroelectric memory device |
JP3622598B2 (ja) * | 1999-10-25 | 2005-02-23 | セイコーエプソン株式会社 | 不揮発性メモリ素子の製造方法 |
JP3731641B2 (ja) * | 1999-12-09 | 2006-01-05 | セイコーエプソン株式会社 | 強誘電体、これを用いた強誘電体メモリ及び強誘電体メモリデバイス、誘電体のパターニング方法、及び、強誘電体メモリデバイスの製造方法 |
NO20001360D0 (no) * | 2000-03-15 | 2000-03-15 | Thin Film Electronics Asa | Vertikale elektriske forbindelser i stabel |
JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
JP2002026277A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | メモリデバイス及びその駆動方法 |
JP3901432B2 (ja) * | 2000-08-22 | 2007-04-04 | セイコーエプソン株式会社 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
DE10062254C2 (de) * | 2000-12-14 | 2002-12-19 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Charakterisieren einer Oberfläche und Verfahren und Vorrichtung zur Ermittlung einer Formanomalie einer Oberfläche |
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
DE60130586T2 (de) * | 2001-08-13 | 2008-06-19 | Advanced Micro Devices, Inc., Sunnyvale | Speicherzelle |
US20030215565A1 (en) * | 2001-10-10 | 2003-11-20 | Industrial Technology Research Institute | Method and apparatus for the formation of laminated circuit having passive components therein |
KR20030057065A (ko) * | 2001-12-28 | 2003-07-04 | 엘지.필립스 엘시디 주식회사 | 금속패턴 형성방법 |
KR100798314B1 (ko) * | 2001-12-28 | 2008-01-28 | 엘지.필립스 엘시디 주식회사 | 기판의 변동에 의한 패턴의 오정렬이 보상된 패턴형성용잉크인쇄장치 및 이를 이용한 패턴형성방법 |
US6828685B2 (en) * | 2002-06-14 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Memory device having a semiconducting polymer film |
NO322192B1 (no) * | 2002-06-18 | 2006-08-28 | Thin Film Electronics Asa | Fremgangsmate til fremstilling av elektrodelag av ferroelektriske minneceller i en ferroelektrisk minneinnretning, samt ferroelektrisk minneinnretning |
US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
WO2004057688A1 (en) * | 2002-12-20 | 2004-07-08 | Avecia Limited | Improvements in and relating to organic semiconducting materials |
JP2004247716A (ja) * | 2003-01-23 | 2004-09-02 | Mitsubishi Chemicals Corp | 積層体の製造方法 |
JP3841085B2 (ja) * | 2004-01-29 | 2006-11-01 | セイコーエプソン株式会社 | キャパシタとその製造方法、及び半導体装置 |
US7135391B2 (en) * | 2004-05-21 | 2006-11-14 | International Business Machines Corporation | Polycrystalline SiGe junctions for advanced devices |
US20060098485A1 (en) * | 2004-10-29 | 2006-05-11 | Agfa-Gevaert | Printable non-volatile passive memory element and method of making thereof |
US7675123B2 (en) * | 2004-10-29 | 2010-03-09 | Agfa-Gevaert Nv | Printable non-volatile passive memory element and method of making thereof |
US20070057311A1 (en) * | 2004-10-29 | 2007-03-15 | Agfa-Gevaert | Conventionally printable non-volatile passive memory element and method of making thereof |
JP2006245185A (ja) * | 2005-03-02 | 2006-09-14 | Seiko Epson Corp | 有機強誘電体メモリ及びその製造方法 |
JP2006253475A (ja) * | 2005-03-11 | 2006-09-21 | Seiko Epson Corp | 有機強誘電体メモリおよびその製造方法 |
JP4580284B2 (ja) * | 2005-06-20 | 2010-11-10 | Okiセミコンダクタ株式会社 | 強誘電体素子の製造方法 |
TWI447765B (zh) * | 2012-01-04 | 2014-08-01 | Inotera Memories Inc | 具有多層電極結構之電容單元 |
-
2005
- 2005-06-14 NO NO20052878A patent/NO324539B1/no unknown
-
2006
- 2006-06-08 AT AT06747667T patent/ATE523881T1/de not_active IP Right Cessation
- 2006-06-08 WO PCT/NO2006/000215 patent/WO2006135246A1/en active Application Filing
- 2006-06-08 EP EP06747667A patent/EP1894203B1/de not_active Not-in-force
- 2006-06-08 JP JP2008516771A patent/JP2008544519A/ja active Pending
- 2006-06-08 CN CN2006800212494A patent/CN101199021B/zh not_active Expired - Fee Related
- 2006-06-08 KR KR1020077030552A patent/KR20080012999A/ko active IP Right Grant
- 2006-06-08 US US11/922,052 patent/US20090285981A1/en not_active Abandoned
-
2012
- 2012-03-12 JP JP2012054625A patent/JP2012178566A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US20090285981A1 (en) | 2009-11-19 |
ATE523881T1 (de) | 2011-09-15 |
NO20052878D0 (no) | 2005-06-14 |
JP2012178566A (ja) | 2012-09-13 |
JP2008544519A (ja) | 2008-12-04 |
KR20080012999A (ko) | 2008-02-12 |
CN101199021B (zh) | 2012-09-05 |
EP1894203B1 (de) | 2011-09-07 |
WO2006135246A1 (en) | 2006-12-21 |
EP1894203A1 (de) | 2008-03-05 |
CN101199021A (zh) | 2008-06-11 |
NO20052878L (no) | 2006-12-15 |
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