JP2004111928A5 - - Google Patents
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- Publication number
- JP2004111928A5 JP2004111928A5 JP2003286413A JP2003286413A JP2004111928A5 JP 2004111928 A5 JP2004111928 A5 JP 2004111928A5 JP 2003286413 A JP2003286413 A JP 2003286413A JP 2003286413 A JP2003286413 A JP 2003286413A JP 2004111928 A5 JP2004111928 A5 JP 2004111928A5
- Authority
- JP
- Japan
- Prior art keywords
- depositing
- seed layer
- paraelectric
- layer
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 claims 18
- 238000000034 method Methods 0.000 claims 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000001272 nitrous oxide Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/212,895 US20040023416A1 (en) | 2002-08-05 | 2002-08-05 | Method for forming a paraelectric semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004111928A JP2004111928A (ja) | 2004-04-08 |
| JP2004111928A5 true JP2004111928A5 (enExample) | 2006-09-07 |
Family
ID=31187833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003286413A Pending JP2004111928A (ja) | 2002-08-05 | 2003-08-05 | 半導体デバイスの常誘電性材料及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040023416A1 (enExample) |
| JP (1) | JP2004111928A (enExample) |
| KR (1) | KR20040014283A (enExample) |
| DE (1) | DE10328872A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100660550B1 (ko) * | 2005-09-15 | 2006-12-22 | 삼성전자주식회사 | 강유전체막 및 강유전체 커패시터 형성 방법 |
| US8445913B2 (en) * | 2007-10-30 | 2013-05-21 | Spansion Llc | Metal-insulator-metal (MIM) device and method of formation thereof |
| CN103250473B (zh) * | 2010-12-06 | 2016-08-31 | 3M创新有限公司 | 复合材料二极管、电子器件及其制备方法 |
| JP2014520404A (ja) * | 2011-06-20 | 2014-08-21 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 高誘電率ペロブスカイト材料ならびにその作製および使用方法 |
| US8962350B2 (en) * | 2013-02-11 | 2015-02-24 | Texas Instruments Incorporated | Multi-step deposition of ferroelectric dielectric material |
| US11690228B2 (en) * | 2021-02-25 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Annealed seed layer to improve ferroelectric properties of memory layer |
| FR3157226A1 (fr) * | 2023-12-21 | 2025-06-27 | Novatreat | Dispositif de préparation d’un pré-mélange gazeux, unité de flammage et procédé utilisant ce dispositif |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3209082B2 (ja) * | 1996-03-06 | 2001-09-17 | セイコーエプソン株式会社 | 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド |
| KR0183868B1 (ko) * | 1996-05-25 | 1999-04-15 | 김광호 | 강유전체막 및 그의 형성방법 |
| US6255762B1 (en) * | 1996-07-17 | 2001-07-03 | Citizen Watch Co., Ltd. | Ferroelectric element and process for producing the same |
| US5876503A (en) * | 1996-11-27 | 1999-03-02 | Advanced Technology Materials, Inc. | Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions |
| US6190728B1 (en) * | 1997-09-29 | 2001-02-20 | Yazaki Corporation | Process for forming thin films of functional ceramics |
| US6180420B1 (en) * | 1997-12-10 | 2001-01-30 | Advanced Technology Materials, Inc. | Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates |
| KR100275726B1 (ko) * | 1997-12-31 | 2000-12-15 | 윤종용 | 강유전체 메모리 장치 및 그 제조 방법 |
| JP4772188B2 (ja) * | 1998-11-30 | 2011-09-14 | アイメック | 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法 |
| US6316797B1 (en) * | 1999-02-19 | 2001-11-13 | Advanced Technology Materials, Inc. | Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material |
| US6730354B2 (en) * | 2001-08-08 | 2004-05-04 | Agilent Technologies, Inc. | Forming ferroelectric Pb(Zr,Ti)O3 films |
-
2002
- 2002-08-05 US US10/212,895 patent/US20040023416A1/en not_active Abandoned
-
2003
- 2003-06-26 DE DE10328872A patent/DE10328872A1/de not_active Withdrawn
- 2003-08-05 KR KR1020030054170A patent/KR20040014283A/ko not_active Ceased
- 2003-08-05 JP JP2003286413A patent/JP2004111928A/ja active Pending