JP2006503185A5 - - Google Patents
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- Publication number
- JP2006503185A5 JP2006503185A5 JP2004545398A JP2004545398A JP2006503185A5 JP 2006503185 A5 JP2006503185 A5 JP 2006503185A5 JP 2004545398 A JP2004545398 A JP 2004545398A JP 2004545398 A JP2004545398 A JP 2004545398A JP 2006503185 A5 JP2006503185 A5 JP 2006503185A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- oxide layer
- copper oxide
- forming
- reducing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 16
- 239000005751 Copper oxide Substances 0.000 claims 16
- 229910000431 copper oxide Inorganic materials 0.000 claims 16
- 239000010949 copper Substances 0.000 claims 13
- 238000000034 method Methods 0.000 claims 11
- 229910052802 copper Inorganic materials 0.000 claims 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 239000012691 Cu precursor Substances 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- -1 copper alkoxide Chemical class 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41963302P | 2002-10-17 | 2002-10-17 | |
| US10/686,898 US6933011B2 (en) | 2002-10-17 | 2003-10-15 | Two-step atomic layer deposition of copper layers |
| PCT/US2003/032843 WO2004036624A2 (en) | 2002-10-17 | 2003-10-17 | Two-step atomic layer deposition of copper layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006503185A JP2006503185A (ja) | 2006-01-26 |
| JP2006503185A5 true JP2006503185A5 (enExample) | 2006-08-10 |
Family
ID=32930282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004545398A Abandoned JP2006503185A (ja) | 2002-10-17 | 2003-10-17 | 銅層の２段階原子層沈着 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6933011B2 (enExample) |
| EP (1) | EP1558783A2 (enExample) |
| JP (1) | JP2006503185A (enExample) |
| AU (1) | AU2003287156A1 (enExample) |
| WO (1) | WO2004036624A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102344460B (zh) * | 2002-11-15 | 2014-05-28 | 哈佛学院院长等 | 使用脒基金属的原子层沉积 |
| US20050227007A1 (en) | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| US9029189B2 (en) * | 2003-11-14 | 2015-05-12 | President And Fellows Of Harvard College | Bicyclic guanidines, metal complexes thereof and their use in vapor deposition |
| JP2008508427A (ja) | 2004-07-30 | 2008-03-21 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 原子層蒸着による銅フィルムの蒸着のための銅（ｉｉ）錯体 |
| US20060110525A1 (en) * | 2004-11-19 | 2006-05-25 | Robert Indech | Nanotechnological processing to a copper oxide superconductor increasing critical transition temperature |
| US7692222B2 (en) * | 2006-11-07 | 2010-04-06 | Raytheon Company | Atomic layer deposition in the formation of gate structures for III-V semiconductor |
| JP2009016782A (ja) * | 2007-06-04 | 2009-01-22 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
| WO2009039216A1 (en) * | 2007-09-17 | 2009-03-26 | L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Neutral ligand containing precursors and methods for deposition of a metal containing film |
| DE102007058571B4 (de) * | 2007-12-05 | 2012-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens |
| US20130143402A1 (en) * | 2010-08-20 | 2013-06-06 | Nanmat Technology Co., Ltd. | Method of forming Cu thin film |
| US9005705B2 (en) | 2011-09-14 | 2015-04-14 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method |
| US9583337B2 (en) | 2014-03-26 | 2017-02-28 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
| EP3663433A1 (en) * | 2018-12-04 | 2020-06-10 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method and system for depositing a p-type oxide layer on a substrate |
| CN112670173A (zh) * | 2020-12-29 | 2021-04-16 | 光华临港工程应用技术研发(上海)有限公司 | 用于形成铜金属层的方法及半导体结构 |
| CN115874165A (zh) * | 2022-11-18 | 2023-03-31 | 深圳市原速光电科技有限公司 | 一种铜薄膜的低温原子层沉积制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4977516A (en) * | 1987-04-10 | 1990-12-11 | Shepherd James E | Data acquisition device for balancing rotating components of large machinery |
| US4997722A (en) * | 1989-07-10 | 1991-03-05 | Edward Adler | Composition and method for improving adherence of copper foil to resinous substrates |
| US4997516A (en) * | 1989-07-10 | 1991-03-05 | Edward Adler | Method for improving adherence of copper foil to resinous substrates |
| US5925403A (en) * | 1994-01-31 | 1999-07-20 | Matsushita Electric Works, Ltd. | Method of coating a copper film on a ceramic substrate |
| US5753309A (en) * | 1995-12-19 | 1998-05-19 | Surface Tek Specialty Products, Inc. | Composition and method for reducing copper oxide to metallic copper |
| EP1282911B1 (en) * | 2000-05-15 | 2018-09-05 | Asm International N.V. | Process for producing integrated circuits |
-
2003
- 2003-10-15 US US10/686,898 patent/US6933011B2/en not_active Expired - Fee Related
- 2003-10-17 WO PCT/US2003/032843 patent/WO2004036624A2/en not_active Ceased
- 2003-10-17 EP EP03781334A patent/EP1558783A2/en not_active Withdrawn
- 2003-10-17 JP JP2004545398A patent/JP2006503185A/ja not_active Abandoned
- 2003-10-17 AU AU2003287156A patent/AU2003287156A1/en not_active Abandoned
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