JP2019186562A5 - - Google Patents
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- JP2019186562A5 JP2019186562A5 JP2019112867A JP2019112867A JP2019186562A5 JP 2019186562 A5 JP2019186562 A5 JP 2019186562A5 JP 2019112867 A JP2019112867 A JP 2019112867A JP 2019112867 A JP2019112867 A JP 2019112867A JP 2019186562 A5 JP2019186562 A5 JP 2019186562A5
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- purging
- purge gas
- introducing
- halide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662280886P | 2016-01-20 | 2016-01-20 | |
| US62/280,886 | 2016-01-20 | ||
| US15/404,376 US10283348B2 (en) | 2016-01-20 | 2017-01-12 | High temperature atomic layer deposition of silicon-containing films |
| US15/404,376 | 2017-01-12 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017008324A Division JP6856388B2 (ja) | 2016-01-20 | 2017-01-20 | ケイ素含有膜の高温原子層堆積 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019186562A JP2019186562A (ja) | 2019-10-24 |
| JP2019186562A5 true JP2019186562A5 (enExample) | 2020-02-27 |
| JP7092709B2 JP7092709B2 (ja) | 2022-06-28 |
Family
ID=57860744
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017008324A Active JP6856388B2 (ja) | 2016-01-20 | 2017-01-20 | ケイ素含有膜の高温原子層堆積 |
| JP2019112867A Active JP7092709B2 (ja) | 2016-01-20 | 2019-06-18 | ケイ素含有膜の高温原子層堆積 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017008324A Active JP6856388B2 (ja) | 2016-01-20 | 2017-01-20 | ケイ素含有膜の高温原子層堆積 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10283348B2 (enExample) |
| EP (1) | EP3196336A1 (enExample) |
| JP (2) | JP6856388B2 (enExample) |
| KR (1) | KR102013412B1 (enExample) |
| CN (2) | CN106992114B (enExample) |
| SG (1) | SG10201700452RA (enExample) |
| TW (2) | TW202018116A (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118007094A (zh) * | 2015-06-16 | 2024-05-10 | 弗萨姆材料美国有限责任公司 | 卤硅烷化合物和组合物以及用于使用其沉积含硅膜的方法 |
| US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| US11591692B2 (en) * | 2017-02-08 | 2023-02-28 | Versum Materials Us, Llc | Organoamino-polysiloxanes for deposition of silicon-containing films |
| US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
| US10504901B2 (en) | 2017-04-26 | 2019-12-10 | Asm Ip Holding B.V. | Substrate processing method and device manufactured using the same |
| CN114875388A (zh) | 2017-05-05 | 2022-08-09 | Asm Ip 控股有限公司 | 用于受控形成含氧薄膜的等离子体增强沉积方法 |
| US10950454B2 (en) * | 2017-08-04 | 2021-03-16 | Lam Research Corporation | Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method |
| KR20190065962A (ko) | 2017-12-04 | 2019-06-12 | 에이에스엠 아이피 홀딩 비.브이. | 유전체와 금속 표면 상에 SiOC의 균일한 증착 |
| WO2019118019A1 (en) * | 2017-12-12 | 2019-06-20 | Dow Silicones Corporation | Method of depositing a silicon-containing film on a substrate using organo(halo) siloxane precursors |
| US10431695B2 (en) | 2017-12-20 | 2019-10-01 | Micron Technology, Inc. | Transistors comprising at lease one of GaP, GaN, and GaAs |
| US10825816B2 (en) | 2017-12-28 | 2020-11-03 | Micron Technology, Inc. | Recessed access devices and DRAM constructions |
| US10319586B1 (en) * | 2018-01-02 | 2019-06-11 | Micron Technology, Inc. | Methods comprising an atomic layer deposition sequence |
| US10734527B2 (en) | 2018-02-06 | 2020-08-04 | Micron Technology, Inc. | Transistors comprising a pair of source/drain regions having a channel there-between |
| US11521849B2 (en) * | 2018-07-20 | 2022-12-06 | Applied Materials, Inc. | In-situ deposition process |
| US20200040454A1 (en) * | 2018-08-06 | 2020-02-06 | Lam Research Corporation | Method to increase deposition rate of ald process |
| US10985010B2 (en) * | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| KR20210055101A (ko) * | 2018-10-05 | 2021-05-14 | 버슘머트리얼즈 유에스, 엘엘씨 | 실리콘-함유 필름의 고온 원자 층 증착 |
| US20200131628A1 (en) * | 2018-10-24 | 2020-04-30 | Entegris, Inc. | Method for forming molybdenum films on a substrate |
| KR102157137B1 (ko) * | 2018-11-30 | 2020-09-17 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
| EP3900022A4 (en) | 2018-12-21 | 2022-09-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | PRECURSORS AND METHODS FOR DEPOSITING SI-CONTAINING FILMS USING ALD AT A TEMPERATURE GREATER OR EQUAL TO 550°C |
| WO2021025874A1 (en) | 2019-08-06 | 2021-02-11 | Lam Research Corporation | Thermal atomic layer deposition of silicon-containing films |
| TWI834919B (zh) * | 2019-10-16 | 2024-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| KR102789199B1 (ko) * | 2019-12-19 | 2025-04-01 | 주식회사 원익아이피에스 | 박막증착방법 |
| JP7227122B2 (ja) | 2019-12-27 | 2023-02-21 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| US12341005B2 (en) | 2020-01-17 | 2025-06-24 | Asm Ip Holding B.V. | Formation of SiCN thin films |
| US12142479B2 (en) | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| JP7386732B2 (ja) * | 2020-03-06 | 2023-11-27 | 東京エレクトロン株式会社 | 成膜方法 |
| JP7254044B2 (ja) * | 2020-03-25 | 2023-04-07 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| KR102364476B1 (ko) * | 2020-05-08 | 2022-02-18 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
| US20230220544A1 (en) * | 2020-06-03 | 2023-07-13 | Lam Research Corporation | In-feature wet etch rate ratio reduction |
| TWI797640B (zh) | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
| KR20230043795A (ko) | 2020-07-28 | 2023-03-31 | 램 리써치 코포레이션 | 실리콘-함유 막들의 불순물 감소 |
| CN116917535A (zh) * | 2021-03-02 | 2023-10-20 | 弗萨姆材料美国有限责任公司 | 硅介电膜的选择性淀积 |
| KR20240032126A (ko) | 2021-07-09 | 2024-03-08 | 램 리써치 코포레이션 | 실리콘-함유 막들의 플라즈마 강화 원자 층 증착 |
| US12382633B2 (en) | 2022-04-26 | 2025-08-05 | Micron Technology, Inc. | Microelectronic devices including a selectively removable cap dielectric material, methods of forming the microelectronic devices, and related systems |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US3642851A (en) | 1968-12-27 | 1972-02-15 | Union Carbide Corp | Preparation of linear halosiloxanes and compounds derived therefrom |
| JP3229419B2 (ja) * | 1993-02-10 | 2001-11-19 | ダウ・コ−ニング・コ−ポレ−ション | 酸化ケイ素膜の形成方法 |
| JPH08165294A (ja) | 1994-12-15 | 1996-06-25 | Shin Etsu Chem Co Ltd | １，３−ジクロロ−１，１，３，３−テトラメチルジシロキサンの製造方法 |
| US5989998A (en) * | 1996-08-29 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
| US6013740A (en) | 1998-08-27 | 2000-01-11 | Dow Corning Corporation | Sheet and tube polymers with pendant siloxane groups |
| KR100505668B1 (ko) | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
| TWI262960B (en) * | 2003-02-27 | 2006-10-01 | Samsung Electronics Co Ltd | Method for forming silicon dioxide film using siloxane |
| US7084076B2 (en) * | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
| US7022864B2 (en) * | 2003-07-15 | 2006-04-04 | Advanced Technology Materials, Inc. | Ethyleneoxide-silane and bridged silane precursors for forming low k films |
| JP2006060066A (ja) * | 2004-08-20 | 2006-03-02 | Mitsubishi Electric Corp | シリコン酸化膜の成膜方法および成膜装置 |
| KR20060019868A (ko) * | 2004-08-30 | 2006-03-06 | 삼성코닝 주식회사 | 이중 유기 실록산 전구체를 이용한 절연막의 제조방법 |
| JP4341560B2 (ja) * | 2005-01-31 | 2009-10-07 | 東ソー株式会社 | Ｓｉ含有膜形成材料、Ｓｉ含有膜、Ｓｉ含有膜の製法、及び、半導体デバイス |
| JP5019742B2 (ja) * | 2005-01-31 | 2012-09-05 | 東ソー株式会社 | 環状シロキサン化合物、Ｓｉ含有膜形成材料、およびその用途 |
| WO2006088015A1 (ja) * | 2005-02-18 | 2006-08-24 | Nec Corporation | 有機シリコン系膜の形成方法、当該有機シリコン系膜を有する半導体装置及びその製造方法 |
| KR100660890B1 (ko) | 2005-11-16 | 2006-12-26 | 삼성전자주식회사 | Ａｌｄ를 이용한 이산화실리콘막 형성 방법 |
| US7498273B2 (en) | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
| US8129555B2 (en) * | 2008-08-12 | 2012-03-06 | Air Products And Chemicals, Inc. | Precursors for depositing silicon-containing films and methods for making and using same |
| US7935643B2 (en) * | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
| JP2011165657A (ja) * | 2010-01-15 | 2011-08-25 | Semiconductor Energy Lab Co Ltd | 蓄電装置 |
| US8592294B2 (en) * | 2010-02-22 | 2013-11-26 | Asm International N.V. | High temperature atomic layer deposition of dielectric oxides |
| US9460912B2 (en) * | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| JP6415808B2 (ja) | 2012-12-13 | 2018-10-31 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US9796739B2 (en) * | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
| US20150275355A1 (en) * | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
| JP6545093B2 (ja) | 2015-12-14 | 2019-07-17 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
-
2017
- 2017-01-12 US US15/404,376 patent/US10283348B2/en active Active
- 2017-01-19 TW TW107120415A patent/TW202018116A/zh unknown
- 2017-01-19 TW TW106101964A patent/TWI639723B/zh active
- 2017-01-19 SG SG10201700452RA patent/SG10201700452RA/en unknown
- 2017-01-20 CN CN201710047967.9A patent/CN106992114B/zh active Active
- 2017-01-20 JP JP2017008324A patent/JP6856388B2/ja active Active
- 2017-01-20 KR KR1020170009657A patent/KR102013412B1/ko active Active
- 2017-01-20 EP EP17152346.7A patent/EP3196336A1/en active Pending
- 2017-01-20 CN CN202110169653.2A patent/CN112899648A/zh active Pending
-
2019
- 2019-06-18 JP JP2019112867A patent/JP7092709B2/ja active Active
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