JP2016147861A5 - - Google Patents
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- JP2016147861A5 JP2016147861A5 JP2016024986A JP2016024986A JP2016147861A5 JP 2016147861 A5 JP2016147861 A5 JP 2016147861A5 JP 2016024986 A JP2016024986 A JP 2016024986A JP 2016024986 A JP2016024986 A JP 2016024986A JP 2016147861 A5 JP2016147861 A5 JP 2016147861A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- alkyl group
- formula
- aromatic hydrocarbon
- alkynyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 125000000217 alkyl group Chemical group 0.000 claims description 107
- 125000003342 alkenyl group Chemical group 0.000 claims description 68
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 68
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 68
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 54
- 125000000304 alkynyl group Chemical group 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 32
- 239000002243 precursor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 125000005865 C2-C10alkynyl group Chemical group 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 9
- 230000009969 flowable effect Effects 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 3
- SNXUGEUCSIJCHB-UHFFFAOYSA-N C(C)(C)(C)N[SiH](COC)NC(C)(C)C Chemical compound C(C)(C)(C)N[SiH](COC)NC(C)(C)C SNXUGEUCSIJCHB-UHFFFAOYSA-N 0.000 claims description 2
- XWMAUAVEZUAAAV-WNKDZCFJSA-N C[C@@H]1N([C@@H](CCC1)C)[SiH](COCC)N1[C@H](CCC[C@H]1C)C Chemical compound C[C@@H]1N([C@@H](CCC1)C)[SiH](COCC)N1[C@H](CCC[C@H]1C)C XWMAUAVEZUAAAV-WNKDZCFJSA-N 0.000 claims description 2
- ZRFDUKDDTYBNEQ-UHFFFAOYSA-N N-[(tert-butylamino)-(ethoxymethyl)silyl]-2-methylpropan-2-amine Chemical compound C(C)(C)(C)N[SiH](COCC)NC(C)(C)C ZRFDUKDDTYBNEQ-UHFFFAOYSA-N 0.000 claims description 2
- PCRRTFGXFOFMPC-GEEKYZPCSA-N bis[(2R,6S)-2,6-dimethylpiperidin-1-yl]-(methoxymethyl)silane Chemical compound C[C@@H]1N([C@@H](CCC1)C)[SiH](COC)N1[C@H](CCC[C@H]1C)C PCRRTFGXFOFMPC-GEEKYZPCSA-N 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 3
- 150000001412 amines Chemical class 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- KLGIFEYCWZPRHM-UHFFFAOYSA-N N-[(tert-butylamino)-(propan-2-yloxymethyl)silyl]-2-methylpropan-2-amine Chemical compound C(C)(C)(C)N[SiH](COC(C)C)NC(C)(C)C KLGIFEYCWZPRHM-UHFFFAOYSA-N 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000010926 purge Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000003446 ligand Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562115729P | 2015-02-13 | 2015-02-13 | |
| US62/115,729 | 2015-02-13 | ||
| US15/017,913 | 2016-02-08 | ||
| US15/017,913 US10421766B2 (en) | 2015-02-13 | 2016-02-08 | Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016147861A JP2016147861A (ja) | 2016-08-18 |
| JP2016147861A5 true JP2016147861A5 (enExample) | 2016-12-28 |
| JP6317377B2 JP6317377B2 (ja) | 2018-04-25 |
Family
ID=55353129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016024986A Active JP6317377B2 (ja) | 2015-02-13 | 2016-02-12 | ビスアミノアルコキシシラン化合物及びケイ素含有膜を堆積するためのその使用法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10421766B2 (enExample) |
| EP (1) | EP3056500B1 (enExample) |
| JP (1) | JP6317377B2 (enExample) |
| KR (1) | KR101856132B1 (enExample) |
| CN (1) | CN105906660B (enExample) |
| SG (1) | SG10201601102XA (enExample) |
| TW (2) | TWI602827B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101875183B1 (ko) * | 2014-06-11 | 2018-07-06 | (주)디엔에프 | 신규한 아미노실릴아민 화합물 및 원자층 증착법을 이용한 Si-N 결합을 포함하는 절연막의 제조방법 |
| US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
| US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
| US11735413B2 (en) * | 2016-11-01 | 2023-08-22 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-k films to fill surface features |
| JP7084402B2 (ja) * | 2016-12-22 | 2022-06-14 | イラミーナ インコーポレーテッド | インプリント装置 |
| US10822458B2 (en) * | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
| US11591692B2 (en) * | 2017-02-08 | 2023-02-28 | Versum Materials Us, Llc | Organoamino-polysiloxanes for deposition of silicon-containing films |
| US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
| JP7183187B2 (ja) * | 2017-05-16 | 2022-12-05 | エーエスエム アイピー ホールディング ビー．ブイ． | 誘電体上の酸化物の選択的ｐｅａｌｄ |
| US11049714B2 (en) * | 2017-09-19 | 2021-06-29 | Versum Materials Us, Llc | Silyl substituted organoamines as precursors for high growth rate silicon-containing films |
| US10483099B1 (en) * | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
| US12482648B2 (en) | 2018-10-02 | 2025-11-25 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
| JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー．ブイ． | 選択的パッシベーションおよび選択的堆積 |
| EP3766888A1 (en) * | 2018-11-30 | 2021-01-20 | Hansol Chemical Co., Ltd | Silicon precursor and method of manufacturing silicon-containing thin film using the same |
| KR102157137B1 (ko) | 2018-11-30 | 2020-09-17 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
| CN109935519B (zh) * | 2019-03-26 | 2020-11-03 | 深圳市华星光电技术有限公司 | 提高栅极绝缘层成膜均匀性的方法 |
| EP3977508A4 (en) * | 2019-06-21 | 2023-06-14 | Versum Materials US, LLC | COMPOSITIONS AND METHODS OF USE THEREOF FOR DEPOSITION OF SILICON-CONTAINING FILM |
| KR102887475B1 (ko) * | 2020-02-14 | 2025-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 펄스형 플라즈마 전력을 사용하여 유전체 재료 층을 형성하기 위한 방법, 이 층을 포함한 구조물 및 소자, 그리고 이 층을 형성하기 위한 시스템 |
| CN111681943B (zh) * | 2020-04-27 | 2025-10-31 | 全球能源互联网研究院有限公司 | 一种碳化硅表面的处理方法 |
| CN112210769B (zh) * | 2020-09-29 | 2023-04-25 | 合肥安德科铭半导体科技有限公司 | 一种低温高生长速率氧化硅薄膜的原子层沉积方法 |
| JP2022099123A (ja) * | 2020-12-22 | 2022-07-04 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び処理装置 |
| CN112812134A (zh) * | 2020-12-26 | 2021-05-18 | 浙江博瑞电子科技有限公司 | 一种双（叔丁基氨基）硅烷的精制方法 |
| CN112885713A (zh) * | 2021-01-29 | 2021-06-01 | 合肥维信诺科技有限公司 | 改善膜质的方法和显示面板 |
| WO2022180825A1 (ja) * | 2021-02-26 | 2022-09-01 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
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| US3458556A (en) | 1966-10-20 | 1969-07-29 | Gen Electric | Acyloxyaminosilanes |
| US4491669A (en) | 1980-11-12 | 1985-01-01 | Petrarch Systems Inc. | Mixed alkoxyaminosilanes, methods of making same and vulcanizing silicons prepared therefrom |
| US4345088A (en) | 1981-03-31 | 1982-08-17 | Union Carbide Corporation | Preparation of alkoxyaminohydridosilanes |
| US6114558A (en) | 1997-12-23 | 2000-09-05 | Sivento Inc. | Preparation of alkyl(amino)dialkoxysilanes |
| CN1125074C (zh) | 1999-01-13 | 2003-10-22 | 西文图公司 | 烷基(氨基)二烷氧基硅烷的制备 |
| AU2003281815A1 (en) | 2002-08-02 | 2004-02-23 | The Government Of The United States Of America, Represented By The Secretary, Dept. Of Health And Hu | Cross-linked nitric oxide-releasing polyamine coated substrates, compositions comprising same and method of making same |
| US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
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| US7425350B2 (en) | 2005-04-29 | 2008-09-16 | Asm Japan K.K. | Apparatus, precursors and deposition methods for silicon-containing materials |
| ES2389665T3 (es) | 2005-05-31 | 2012-10-30 | Toho Titanium Co., Ltd. | Compuestos aminosilánicos, componentes catalíticos y catalizadores para la polimerización de olefinas, y procedimiento para la producción de polímeros olefínicos con los mismos |
| EP1921092B1 (en) | 2005-08-08 | 2013-10-02 | Toho Titanium Co., Ltd. | Catalyst component and catalyst for olefin polymerization and method for producing olefin polymer using those |
| US7875312B2 (en) * | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
| US7888273B1 (en) | 2006-11-01 | 2011-02-15 | Novellus Systems, Inc. | Density gradient-free gap fill |
| US9245739B2 (en) | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
| KR20100038211A (ko) * | 2007-06-28 | 2010-04-13 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 이산화규소 간극 충전용 전구체 |
| US7943531B2 (en) | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
| US8129555B2 (en) * | 2008-08-12 | 2012-03-06 | Air Products And Chemicals, Inc. | Precursors for depositing silicon-containing films and methods for making and using same |
| US8889235B2 (en) * | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| US8460753B2 (en) * | 2010-12-09 | 2013-06-11 | Air Products And Chemicals, Inc. | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
| US8840630B2 (en) * | 2011-06-15 | 2014-09-23 | Cook Medical Technologies Llc | Button release handle |
| US9200167B2 (en) * | 2012-01-27 | 2015-12-01 | Air Products And Chemicals, Inc. | Alkoxyaminosilane compounds and applications thereof |
| US10279959B2 (en) | 2012-12-11 | 2019-05-07 | Versum Materials Us, Llc | Alkoxysilylamine compounds and applications thereof |
| US9777378B2 (en) * | 2015-01-07 | 2017-10-03 | Applied Materials, Inc. | Advanced process flow for high quality FCVD films |
-
2016
- 2016-02-08 US US15/017,913 patent/US10421766B2/en active Active
- 2016-02-12 JP JP2016024986A patent/JP6317377B2/ja active Active
- 2016-02-12 EP EP16155509.9A patent/EP3056500B1/en active Active
- 2016-02-12 KR KR1020160016581A patent/KR101856132B1/ko active Active
- 2016-02-14 CN CN201610256473.7A patent/CN105906660B/zh active Active
- 2016-02-15 SG SG10201601102XA patent/SG10201601102XA/en unknown
- 2016-02-15 TW TW105104255A patent/TWI602827B/zh active
- 2016-02-15 TW TW106131827A patent/TW201808973A/zh unknown
-
2019
- 2019-08-09 US US16/537,186 patent/US11142658B2/en active Active
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