CN105906660B - 双氨基烷氧基硅烷化合物和使用其沉积含硅膜的方法 - Google Patents
双氨基烷氧基硅烷化合物和使用其沉积含硅膜的方法 Download PDFInfo
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- CN105906660B CN105906660B CN201610256473.7A CN201610256473A CN105906660B CN 105906660 B CN105906660 B CN 105906660B CN 201610256473 A CN201610256473 A CN 201610256473A CN 105906660 B CN105906660 B CN 105906660B
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- 238000000034 method Methods 0.000 title claims abstract description 114
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 74
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- 239000010703 silicon Substances 0.000 title claims description 72
- 238000000151 deposition Methods 0.000 title claims description 66
- 150000001875 compounds Chemical class 0.000 title claims description 52
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 105
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 38
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- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 239000002243 precursor Substances 0.000 claims description 148
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 84
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 55
- 229910052757 nitrogen Inorganic materials 0.000 claims description 55
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 53
- 229910052760 oxygen Inorganic materials 0.000 claims description 53
- 239000001301 oxygen Substances 0.000 claims description 53
- 239000000203 mixture Substances 0.000 claims description 50
- -1 bis- (tert-butylamino) (ethoxymethyl) Chemical group 0.000 claims description 47
- 238000005229 chemical vapour deposition Methods 0.000 claims description 47
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
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- BVNZLSHMOBSFKP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxysilane Chemical class CC(C)(C)O[SiH3] BVNZLSHMOBSFKP-UHFFFAOYSA-N 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
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- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 6
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- 238000011065 in-situ storage Methods 0.000 description 6
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- YRLNLEDCGGGGRS-UHFFFAOYSA-N pentoxysilane Chemical group CCCCCO[SiH3] YRLNLEDCGGGGRS-UHFFFAOYSA-N 0.000 description 6
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- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 6
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- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
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- C09D7/63—Additives non-macromolecular organic
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
- C01B21/0823—Silicon oxynitrides
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0828—Carbonitrides or oxycarbonitrides of metals, boron or silicon
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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- C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
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- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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- C07F7/08—Compounds having one or more C—Si linkages
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- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
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- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/308—Oxynitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/32—Carbides
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- C23C16/345—Silicon nitride
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
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| US15/017,913 US10421766B2 (en) | 2015-02-13 | 2016-02-08 | Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films |
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Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101875183B1 (ko) * | 2014-06-11 | 2018-07-06 | (주)디엔에프 | 신규한 아미노실릴아민 화합물 및 원자층 증착법을 이용한 Si-N 결합을 포함하는 절연막의 제조방법 |
| US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
| US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
| US11735413B2 (en) * | 2016-11-01 | 2023-08-22 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-k films to fill surface features |
| CA3046374A1 (en) * | 2016-12-22 | 2018-06-28 | Illumina, Inc. | Imprinting apparatus |
| US10822458B2 (en) * | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
| US11591692B2 (en) * | 2017-02-08 | 2023-02-28 | Versum Materials Us, Llc | Organoamino-polysiloxanes for deposition of silicon-containing films |
| US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
| US11170993B2 (en) * | 2017-05-16 | 2021-11-09 | Asm Ip Holding B.V. | Selective PEALD of oxide on dielectric |
| US11049714B2 (en) * | 2017-09-19 | 2021-06-29 | Versum Materials Us, Llc | Silyl substituted organoamines as precursors for high growth rate silicon-containing films |
| US10483099B1 (en) * | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
| US12482648B2 (en) | 2018-10-02 | 2025-11-25 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
| JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー．ブイ． | 選択的パッシベーションおよび選択的堆積 |
| WO2020111405A1 (ko) * | 2018-11-30 | 2020-06-04 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
| KR102157137B1 (ko) | 2018-11-30 | 2020-09-17 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
| CN109935519B (zh) * | 2019-03-26 | 2020-11-03 | 深圳市华星光电技术有限公司 | 提高栅极绝缘层成膜均匀性的方法 |
| JP7684232B2 (ja) * | 2019-06-21 | 2025-05-27 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ケイ素含有膜堆積のための組成物およびそれを用いた方法 |
| KR102887475B1 (ko) * | 2020-02-14 | 2025-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 펄스형 플라즈마 전력을 사용하여 유전체 재료 층을 형성하기 위한 방법, 이 층을 포함한 구조물 및 소자, 그리고 이 층을 형성하기 위한 시스템 |
| CN111681943B (zh) * | 2020-04-27 | 2025-10-31 | 全球能源互联网研究院有限公司 | 一种碳化硅表面的处理方法 |
| CN112210769B (zh) * | 2020-09-29 | 2023-04-25 | 合肥安德科铭半导体科技有限公司 | 一种低温高生长速率氧化硅薄膜的原子层沉积方法 |
| JP2022099123A (ja) * | 2020-12-22 | 2022-07-04 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び処理装置 |
| CN112812134A (zh) * | 2020-12-26 | 2021-05-18 | 浙江博瑞电子科技有限公司 | 一种双（叔丁基氨基）硅烷的精制方法 |
| CN112885713A (zh) * | 2021-01-29 | 2021-06-01 | 合肥维信诺科技有限公司 | 改善膜质的方法和显示面板 |
| KR20230150258A (ko) * | 2021-02-26 | 2023-10-30 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3458556A (en) * | 1966-10-20 | 1969-07-29 | Gen Electric | Acyloxyaminosilanes |
| US4345088A (en) * | 1981-03-31 | 1982-08-17 | Union Carbide Corporation | Preparation of alkoxyaminohydridosilanes |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491669A (en) | 1980-11-12 | 1985-01-01 | Petrarch Systems Inc. | Mixed alkoxyaminosilanes, methods of making same and vulcanizing silicons prepared therefrom |
| US6114558A (en) | 1997-12-23 | 2000-09-05 | Sivento Inc. | Preparation of alkyl(amino)dialkoxysilanes |
| JP3569680B2 (ja) | 1999-01-13 | 2004-09-22 | シイヴエントー，インコーポレイテッド | アルキル（アミノ）ジアルコキシシラン類の調製 |
| JP2005534485A (ja) | 2002-08-02 | 2005-11-17 | アメリカ合衆国 | 架橋した一酸化窒素−放出ポリアミン被覆基質、それを含む組成物及びその製造方法 |
| US7524735B1 (en) | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
| US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
| US7425350B2 (en) | 2005-04-29 | 2008-09-16 | Asm Japan K.K. | Apparatus, precursors and deposition methods for silicon-containing materials |
| SG162730A1 (en) | 2005-05-31 | 2010-07-29 | Toho Titanium Co Ltd | Aminosilane compounds, catalyst components and catalysts for olefin polymerization, and process for production of olefin polymers with the same |
| WO2007018280A1 (ja) | 2005-08-08 | 2007-02-15 | Toho Catalyst Co., Ltd. | オレフィン類重合用触媒成分および触媒並びにこれを用いたオレフィン類重合体の製造方法 |
| US7875312B2 (en) * | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
| US9245739B2 (en) | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
| US7888273B1 (en) | 2006-11-01 | 2011-02-15 | Novellus Systems, Inc. | Density gradient-free gap fill |
| KR101593352B1 (ko) * | 2007-06-28 | 2016-02-15 | 인티그리스, 인코포레이티드 | 이산화규소 간극 충전용 전구체 |
| US7943531B2 (en) | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
| US8129555B2 (en) * | 2008-08-12 | 2012-03-06 | Air Products And Chemicals, Inc. | Precursors for depositing silicon-containing films and methods for making and using same |
| US8889235B2 (en) * | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| US8460753B2 (en) * | 2010-12-09 | 2013-06-11 | Air Products And Chemicals, Inc. | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
| US8840630B2 (en) * | 2011-06-15 | 2014-09-23 | Cook Medical Technologies Llc | Button release handle |
| US9200167B2 (en) * | 2012-01-27 | 2015-12-01 | Air Products And Chemicals, Inc. | Alkoxyaminosilane compounds and applications thereof |
| US10279959B2 (en) | 2012-12-11 | 2019-05-07 | Versum Materials Us, Llc | Alkoxysilylamine compounds and applications thereof |
| US9777378B2 (en) * | 2015-01-07 | 2017-10-03 | Applied Materials, Inc. | Advanced process flow for high quality FCVD films |
-
2016
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- 2016-02-12 JP JP2016024986A patent/JP6317377B2/ja active Active
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- 2016-02-12 KR KR1020160016581A patent/KR101856132B1/ko active Active
- 2016-02-14 CN CN201610256473.7A patent/CN105906660B/zh active Active
- 2016-02-15 TW TW105104255A patent/TWI602827B/zh active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3458556A (en) * | 1966-10-20 | 1969-07-29 | Gen Electric | Acyloxyaminosilanes |
| US4345088A (en) * | 1981-03-31 | 1982-08-17 | Union Carbide Corporation | Preparation of alkoxyaminohydridosilanes |
Non-Patent Citations (3)
| Title |
|---|
| SCRAMBLING OF METHOXYL, DIMETHYLAMINO AND CHLORO GROUPS ON THE METHYL- AND DIMETHYLSILICON MOIETIES;J. R. VAN WAZER et al.;《J. Inorg. Nucl. Chem》;19641231;第26卷;表1第8行 |
| Synthesis and reactivity of the stable silylene N,N’-di-tert-butyl-1,3-diaza -2-sila-2-ylidene;Michael Haaf et al.;《Can. J. Chem.》;20001101;第78卷(第11期);第1529页图1 |
| Zur Synthese und Reaktivitat aminofunktioneller Silyltriflate;Wolfram Uhlig et al.;《Journal of Organometallic Chemidry》;19941231;第467卷;第33页右栏 |
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| TWI602827B (zh) | 2017-10-21 |
| TW201630923A (zh) | 2016-09-01 |
| US20160237100A1 (en) | 2016-08-18 |
| US11142658B2 (en) | 2021-10-12 |
| TW201808973A (zh) | 2018-03-16 |
| EP3056500A1 (en) | 2016-08-17 |
| JP2016147861A (ja) | 2016-08-18 |
| JP6317377B2 (ja) | 2018-04-25 |
| US10421766B2 (en) | 2019-09-24 |
| KR101856132B1 (ko) | 2018-05-11 |
| SG10201601102XA (en) | 2016-09-29 |
| EP3056500B1 (en) | 2019-01-30 |
| KR20160100260A (ko) | 2016-08-23 |
| US20190359637A1 (en) | 2019-11-28 |
| CN105906660A (zh) | 2016-08-31 |
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