JP2011522120A5 - - Google Patents
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- JP2011522120A5 JP2011522120A5 JP2011511113A JP2011511113A JP2011522120A5 JP 2011522120 A5 JP2011522120 A5 JP 2011522120A5 JP 2011511113 A JP2011511113 A JP 2011511113A JP 2011511113 A JP2011511113 A JP 2011511113A JP 2011522120 A5 JP2011522120 A5 JP 2011522120A5
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- precursor
- sime
- geme
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000002243 precursor Substances 0.000 claims description 36
- 229910052714 tellurium Inorganic materials 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 34
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052732 germanium Chemical group 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- -1 perfluorophenyl carbon Chemical compound 0.000 claims description 4
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 claims description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 2
- 125000004890 (C1-C6) alkylamino group Chemical group 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000005103 alkyl silyl group Chemical group 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- XPXMKIXDFWLRAA-UHFFFAOYSA-N hydrazinide Chemical compound [NH-]N XPXMKIXDFWLRAA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Chemical group 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 5
- 239000000126 substance Substances 0.000 claims 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims 1
- 101000996032 Xenopus laevis Nodal homolog Proteins 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5712808P | 2008-05-29 | 2008-05-29 | |
| US61/057,128 | 2008-05-29 | ||
| PCT/IB2009/008067 WO2010055423A2 (en) | 2008-05-29 | 2009-05-29 | Tellurium precursors for film deposition |
| US12/475,204 US8101237B2 (en) | 2008-05-29 | 2009-05-29 | Tellurium precursors for film deposition |
| US12/475,204 | 2009-05-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011522120A JP2011522120A (ja) | 2011-07-28 |
| JP2011522120A5 true JP2011522120A5 (enExample) | 2011-09-08 |
Family
ID=41380625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011511113A Pending JP2011522120A (ja) | 2008-05-29 | 2009-05-29 | 膜堆積用のテルル前駆体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8101237B2 (enExample) |
| JP (1) | JP2011522120A (enExample) |
| KR (1) | KR20110014160A (enExample) |
| CN (1) | CN102046838A (enExample) |
| TW (1) | TWI480411B (enExample) |
| WO (1) | WO2010055423A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8288198B2 (en) | 2006-05-12 | 2012-10-16 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
| EP2511280A1 (en) | 2006-11-02 | 2012-10-17 | Advanced Technology Materials, Inc. | Germanium amidinate complexes useful for CVD/ALD of metal thin films |
| KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
| US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
| SG178736A1 (en) | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
| WO2010055423A2 (en) | 2008-05-29 | 2010-05-20 | L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Tellurium precursors for film deposition |
| US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
| JP2013503849A (ja) | 2009-09-02 | 2013-02-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム（ｉｉ）先駆物質 |
| KR20120123126A (ko) | 2010-02-03 | 2012-11-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 박막 증착용 칼코게나이드-함유 전구체, 그의 제조 방법 및 사용 방법 |
| KR101163046B1 (ko) * | 2010-07-08 | 2012-07-05 | 에스케이하이닉스 주식회사 | 상변화 메모리 소자의 제조 방법 |
| RU2440640C1 (ru) * | 2010-11-10 | 2012-01-20 | Государственное образовательное учреждение высшего профессионального образования Дагестанский государственный университет | Способ получения монокристаллических пленок и слоев теллура |
| US9920077B2 (en) | 2013-09-27 | 2018-03-20 | L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof |
| US9543144B2 (en) * | 2014-12-31 | 2017-01-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Vapor deposition of chalcogenide-containing films |
| US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US10192734B2 (en) | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
| TWI848976B (zh) * | 2018-10-04 | 2024-07-21 | 日商Ａｄｅｋａ股份有限公司 | 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜之製造方法及化合物 |
| TWI889746B (zh) | 2020-02-20 | 2025-07-11 | 美商應用材料股份有限公司 | 含碲薄膜之沉積 |
| US12356873B2 (en) | 2020-05-18 | 2025-07-08 | Seoul National University R&DBFoundation | Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same |
| KR102444266B1 (ko) * | 2020-05-18 | 2022-09-16 | 서울대학교산학협력단 | 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법 |
| KR102444272B1 (ko) * | 2020-05-18 | 2022-09-16 | 서울대학교산학협력단 | 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법 |
| CN115216748B (zh) * | 2022-09-19 | 2022-12-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | 碲薄膜的制备方法和半导体器件 |
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| EP2511280A1 (en) | 2006-11-02 | 2012-10-17 | Advanced Technology Materials, Inc. | Germanium amidinate complexes useful for CVD/ALD of metal thin films |
| KR100871692B1 (ko) | 2006-11-07 | 2008-12-08 | 삼성전자주식회사 | 저온 증착용 금속 전구체, 그를 사용한 금속 박막 형성방법 및 상변화 메모리 소자 제조 방법 |
| KR101275799B1 (ko) | 2006-11-21 | 2013-06-18 | 삼성전자주식회사 | 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법 |
| US8377341B2 (en) | 2007-04-24 | 2013-02-19 | Air Products And Chemicals, Inc. | Tellurium (Te) precursors for making phase change memory materials |
| TWI471449B (zh) | 2007-09-17 | 2015-02-01 | Air Liquide | 用於ｇｓｔ膜沈積之碲前驅物 |
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| US8765223B2 (en) | 2008-05-08 | 2014-07-01 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
| WO2010055423A2 (en) | 2008-05-29 | 2010-05-20 | L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Tellurium precursors for film deposition |
| TWM372771U (en) * | 2009-05-20 | 2010-01-21 | Legend Lifestyle Products Corp | Torque detection display device for tool |
-
2009
- 2009-05-29 WO PCT/IB2009/008067 patent/WO2010055423A2/en not_active Ceased
- 2009-05-29 US US12/475,204 patent/US8101237B2/en active Active
- 2009-05-29 KR KR1020107026546A patent/KR20110014160A/ko not_active Ceased
- 2009-05-29 JP JP2011511113A patent/JP2011522120A/ja active Pending
- 2009-05-29 CN CN200980119838XA patent/CN102046838A/zh active Pending
- 2009-06-01 TW TW098118134A patent/TWI480411B/zh not_active IP Right Cessation
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