KR20110014160A - 필름 증착을 위한 텔루륨 전구체 - Google Patents

필름 증착을 위한 텔루륨 전구체 Download PDF

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KR20110014160A
KR20110014160A KR1020107026546A KR20107026546A KR20110014160A KR 20110014160 A KR20110014160 A KR 20110014160A KR 1020107026546 A KR1020107026546 A KR 1020107026546A KR 20107026546 A KR20107026546 A KR 20107026546A KR 20110014160 A KR20110014160 A KR 20110014160A
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precursor
tellurium
reactor
sime
geme
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신고 오꾸보
가즈따까 야나기따
줄리앙 가띠노
Original Assignee
레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
KR1020107026546A 2008-05-29 2009-05-29 필름 증착을 위한 텔루륨 전구체 Ceased KR20110014160A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US5712808P 2008-05-29 2008-05-29
US61/057,128 2008-05-29
US12/475,204 2009-05-29
US12/475,204 US8101237B2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition

Publications (1)

Publication Number Publication Date
KR20110014160A true KR20110014160A (ko) 2011-02-10

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US (1) US8101237B2 (enExample)
JP (1) JP2011522120A (enExample)
KR (1) KR20110014160A (enExample)
CN (1) CN102046838A (enExample)
TW (1) TWI480411B (enExample)
WO (1) WO2010055423A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210142320A (ko) * 2020-05-18 2021-11-25 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
KR20210142321A (ko) * 2020-05-18 2021-11-25 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
US12356873B2 (en) 2020-05-18 2025-07-08 Seoul National University R&DBFoundation Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG171683A1 (en) 2006-05-12 2011-06-29 Advanced Tech Materials Low temperature deposition of phase change memory materials
KR101279925B1 (ko) 2006-11-02 2013-07-08 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 박막의 ｃｖｄ/ａｌｄ용으로 유용한 안티몬 및 게르마늄 착체
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
JP5650880B2 (ja) 2007-10-31 2015-01-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 非晶質Ｇｅ／Ｔｅ蒸着方法
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8802194B2 (en) * 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
JP2011522120A (ja) 2008-05-29 2011-07-28 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜堆積用のテルル前駆体
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
JP2013503849A (ja) 2009-09-02 2013-02-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム（ｉｉ）先駆物質
WO2011095849A1 (en) * 2010-02-03 2011-08-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
KR101163046B1 (ko) * 2010-07-08 2012-07-05 에스케이하이닉스 주식회사 상변화 메모리 소자의 제조 방법
RU2440640C1 (ru) * 2010-11-10 2012-01-20 Государственное образовательное учреждение высшего профессионального образования Дагестанский государственный университет Способ получения монокристаллических пленок и слоев теллура
CN105849221B (zh) 2013-09-27 2019-06-18 乔治洛德方法研究和开发液化空气有限公司 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物
US9543144B2 (en) * 2014-12-31 2017-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor deposition of chalcogenide-containing films
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
TWI848976B (zh) * 2018-10-04 2024-07-21 日商Ａｄｅｋａ股份有限公司 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜之製造方法及化合物
TWI889746B (zh) 2020-02-20 2025-07-11 美商應用材料股份有限公司 含碲薄膜之沉積
CN115216748B (zh) * 2022-09-19 2022-12-30 中国科学院苏州纳米技术与纳米仿生研究所 碲薄膜的制备方法和半导体器件

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573958A (en) * 1968-05-31 1971-04-06 Francis E Small Heat sensitive recording sheet
SU570239A1 (ru) * 1976-02-12 1979-02-10 Институт химии АН СССР "Способ получени кристаллических соединений а1у ву14
US4419386A (en) * 1981-09-14 1983-12-06 Gordon Roy G Non-iridescent glass structures
US4377613A (en) * 1981-09-14 1983-03-22 Gordon Roy G Non-iridescent glass structures
DE4214281A1 (de) 1992-04-30 1993-11-04 Consortium Elektrochem Ind Verfahren zur herstellung von germaniumdihalogenid-ether-addukten
DE4234998C2 (de) 1992-10-16 2000-11-16 Michael Denk Cyclische Amide des Siliciums und des Germaniums
US5656338A (en) * 1994-12-13 1997-08-12 Gordon; Roy G. Liquid solution of TiBr4 in Br2 used as a precursor for the chemical vapor deposition of titanium or titanium nitride
US6037003A (en) 1996-10-16 2000-03-14 President And Fellows Of Harvard College Chemical vapor deposition of aluminum oxide
JP2002527528A (ja) 1998-10-21 2002-08-27 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ アルカリ土類金属を含有する材料を形成するための液体化合物
KR20010080412A (ko) 1998-11-12 2001-08-22 조이스 브린톤 향상된 스텝 커버리지를 갖는 확산 장벽 물질
WO2001066816A1 (en) 2000-03-03 2001-09-13 President And Fellows Of Harvard College Liquid sources for cvd of group 6 metals and metal compounds
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
EP1180553A1 (en) 2000-08-15 2002-02-20 Air Products And Chemicals, Inc. CVD process for depositing copper on a barrier layer
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
EP1490529A1 (en) 2002-03-28 2004-12-29 President And Fellows Of Harvard College Vapor deposition of silicon dioxide nanolaminates
JP4714422B2 (ja) 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
JP4954448B2 (ja) 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
US7071125B2 (en) * 2004-09-22 2006-07-04 Intel Corporation Precursors for film formation
KR100618879B1 (ko) * 2004-12-27 2006-09-01 삼성전자주식회사 게르마늄 전구체, 이를 이용하여 형성된 ｇｓｔ 박막,상기 박막의 제조 방법 및 상변화 메모리 소자
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys
US20060172067A1 (en) * 2005-01-28 2006-08-03 Energy Conversion Devices, Inc Chemical vapor deposition of chalcogenide materials
KR100688532B1 (ko) * 2005-02-14 2007-03-02 삼성전자주식회사 텔루르 전구체, 이를 이용하여 제조된 Ｔｅ-함유 칼코게나이드(ｃｈａｌｃｏｇｅｎｉｄｅ) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자
US7678420B2 (en) * 2005-06-22 2010-03-16 Sandisk 3D Llc Method of depositing germanium films
KR100962623B1 (ko) 2005-09-03 2010-06-11 삼성전자주식회사 상변화 물질층 형성 방법, 이를 이용한 상변화 메모리 유닛및 상변화 메모리 장치의 제조 방법
JP5265377B2 (ja) 2005-11-23 2013-08-14 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 新規な水素化シリコンゲルマニウム、その製造法および使用法
WO2007067604A2 (en) 2005-12-06 2007-06-14 Structured Materials Inc. Method of making undoped, alloyed and doped chalcogenide films by mocvd processes
KR100695168B1 (ko) 2006-01-10 2007-03-14 삼성전자주식회사 상변화 물질 박막의 형성방법, 이를 이용한 상변화 메모리소자의 제조방법
SG171683A1 (en) 2006-05-12 2011-06-29 Advanced Tech Materials Low temperature deposition of phase change memory materials
CN101500989B (zh) 2006-06-28 2012-12-19 哈佛学院院长等 四脒基金属(iv)化合物及其在气相沉积中的用途
US7638645B2 (en) * 2006-06-28 2009-12-29 President And Fellows Of Harvard University Metal (IV) tetra-amidinate compounds and their use in vapor deposition
WO2008008319A2 (en) 2006-07-10 2008-01-17 President And Fellows Of Harvard College Selective sealing of porous dielectric materials
KR100757415B1 (ko) * 2006-07-13 2007-09-10 삼성전자주식회사 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법
US7547631B2 (en) * 2006-07-31 2009-06-16 Rohm And Haas Electronic Materials Llc Organometallic compounds
US7630142B2 (en) * 2006-10-20 2009-12-08 Olympus Imaging Corp. Bent type zoom optical system and imaging system using the same
KR100829602B1 (ko) 2006-10-20 2008-05-14 삼성전자주식회사 상변화 물질층 형성 방법 및 상변화 메모리 장치의 제조방법
KR101279925B1 (ko) 2006-11-02 2013-07-08 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 박막의 ｃｖｄ/ａｌｄ용으로 유용한 안티몬 및 게르마늄 착체
KR100871692B1 (ko) * 2006-11-07 2008-12-08 삼성전자주식회사 저온 증착용 금속 전구체, 그를 사용한 금속 박막 형성방법 및 상변화 메모리 소자 제조 방법
KR101275799B1 (ko) * 2006-11-21 2013-06-18 삼성전자주식회사 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법
US8377341B2 (en) * 2007-04-24 2013-02-19 Air Products And Chemicals, Inc. Tellurium (Te) precursors for making phase change memory materials
US8454928B2 (en) 2007-09-17 2013-06-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tellurium precursors for GST deposition
US7960205B2 (en) * 2007-11-27 2011-06-14 Air Products And Chemicals, Inc. Tellurium precursors for GST films in an ALD or CVD process
US20090162973A1 (en) 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
KR101604864B1 (ko) 2008-04-25 2016-03-18 에이에스엠 인터내셔널 엔.브이. 텔루르와 셀렌 박막의 원자층 증착을 위한 전구체의 합성과 그 용도
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
JP2011522120A (ja) 2008-05-29 2011-07-28 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜堆積用のテルル前駆体
TWM372771U (en) * 2009-05-20 2010-01-21 Legend Lifestyle Products Corp Torque detection display device for tool

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KR20210142320A (ko) * 2020-05-18 2021-11-25 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
KR20210142321A (ko) * 2020-05-18 2021-11-25 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
KR20220130061A (ko) * 2020-05-18 2022-09-26 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
KR20220130638A (ko) * 2020-05-18 2022-09-27 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
US12356873B2 (en) 2020-05-18 2025-07-08 Seoul National University R&DBFoundation Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

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US8101237B2 (en) 2012-01-24
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TW201016877A (en) 2010-05-01
WO2010055423A2 (en) 2010-05-20
TWI480411B (zh) 2015-04-11
WO2010055423A8 (en) 2010-09-02
CN102046838A (zh) 2011-05-04
WO2010055423A3 (en) 2010-07-15

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