JP2011522120A - 膜堆積用のテルル前駆体 - Google Patents

膜堆積用のテルル前駆体 Download PDF

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Publication number
JP2011522120A
JP2011522120A JP2011511113A JP2011511113A JP2011522120A JP 2011522120 A JP2011522120 A JP 2011522120A JP 2011511113 A JP2011511113 A JP 2011511113A JP 2011511113 A JP2011511113 A JP 2011511113A JP 2011522120 A JP2011522120 A JP 2011522120A
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Prior art keywords
tellurium
precursor
sime
reactor
geme
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JP2011522120A5 (enExample
Inventor
清吾 大窪
和孝 柳田
ガティノー、ジュリアン
Original Assignee
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード
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Publication of JP2011522120A publication Critical patent/JP2011522120A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
JP2011511113A 2008-05-29 2009-05-29 膜堆積用のテルル前駆体 Pending JP2011522120A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US5712808P 2008-05-29 2008-05-29
US61/057,128 2008-05-29
PCT/IB2009/008067 WO2010055423A2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition
US12/475,204 2009-05-29
US12/475,204 US8101237B2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition

Publications (2)

Publication Number Publication Date
JP2011522120A true JP2011522120A (ja) 2011-07-28
JP2011522120A5 JP2011522120A5 (enExample) 2011-09-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011511113A Pending JP2011522120A (ja) 2008-05-29 2009-05-29 膜堆積用のテルル前駆体

Country Status (6)

Country Link
US (1) US8101237B2 (enExample)
JP (1) JP2011522120A (enExample)
KR (1) KR20110014160A (enExample)
CN (1) CN102046838A (enExample)
TW (1) TWI480411B (enExample)
WO (1) WO2010055423A2 (enExample)

Families Citing this family (24)

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SG171683A1 (en) 2006-05-12 2011-06-29 Advanced Tech Materials Low temperature deposition of phase change memory materials
KR101279925B1 (ko) 2006-11-02 2013-07-08 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 박막의 ｃｖｄ/ａｌｄ용으로 유용한 안티몬 및 게르마늄 착체
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JP5650880B2 (ja) 2007-10-31 2015-01-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 非晶質Ｇｅ／Ｔｅ蒸着方法
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US8802194B2 (en) * 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
JP2011522120A (ja) 2008-05-29 2011-07-28 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜堆積用のテルル前駆体
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
JP2013503849A (ja) 2009-09-02 2013-02-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム（ｉｉ）先駆物質
WO2011095849A1 (en) * 2010-02-03 2011-08-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
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CN105849221B (zh) 2013-09-27 2019-06-18 乔治洛德方法研究和开发液化空气有限公司 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物
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US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
TWI848976B (zh) * 2018-10-04 2024-07-21 日商Ａｄｅｋａ股份有限公司 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜之製造方法及化合物
TWI889746B (zh) 2020-02-20 2025-07-11 美商應用材料股份有限公司 含碲薄膜之沉積
KR102444272B1 (ko) * 2020-05-18 2022-09-16 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
US12356873B2 (en) 2020-05-18 2025-07-08 Seoul National University R&DBFoundation Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
KR102444266B1 (ko) * 2020-05-18 2022-09-16 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
CN115216748B (zh) * 2022-09-19 2022-12-30 中国科学院苏州纳米技术与纳米仿生研究所 碲薄膜的制备方法和半导体器件

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