JP2020507199A5 - - Google Patents

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Publication number
JP2020507199A5
JP2020507199A5 JP2019528626A JP2019528626A JP2020507199A5 JP 2020507199 A5 JP2020507199 A5 JP 2020507199A5 JP 2019528626 A JP2019528626 A JP 2019528626A JP 2019528626 A JP2019528626 A JP 2019528626A JP 2020507199 A5 JP2020507199 A5 JP 2020507199A5
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JP
Japan
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sih
silicon
nsih
substrate
containing film
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JP2019528626A
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English (en)
Japanese (ja)
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JP2020507199A (ja
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Priority claimed from US15/661,576 external-priority patent/US10192734B2/en
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JP2019528626A 2016-12-11 2017-12-11 薄膜堆積のための短鎖無機トリシリルアミン系ポリシラザン Pending JP2020507199A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662432666P 2016-12-11 2016-12-11
US62/432,666 2016-12-11
US15/661,576 US10192734B2 (en) 2016-12-11 2017-07-27 Short inorganic trisilylamine-based polysilazanes for thin film deposition
US15/661,576 2017-07-27
PCT/US2017/065506 WO2018107138A1 (en) 2016-12-11 2017-12-11 Short inorganic trisilylamine-based polysilazanes for thin film deposition

Publications (2)

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JP2020507199A JP2020507199A (ja) 2020-03-05
JP2020507199A5 true JP2020507199A5 (enExample) 2021-01-14

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JP2019528626A Pending JP2020507199A (ja) 2016-12-11 2017-12-11 薄膜堆積のための短鎖無機トリシリルアミン系ポリシラザン

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US (1) US10192734B2 (enExample)
JP (1) JP2020507199A (enExample)
KR (1) KR102511289B1 (enExample)
CN (1) CN110036139B (enExample)
TW (1) TWI791477B (enExample)
WO (1) WO2018107138A1 (enExample)

Families Citing this family (288)

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