TWI262960B - Method for forming silicon dioxide film using siloxane - Google Patents
Method for forming silicon dioxide film using siloxaneInfo
- Publication number
- TWI262960B TWI262960B TW93104720A TW93104720A TWI262960B TW I262960 B TWI262960 B TW I262960B TW 93104720 A TW93104720 A TW 93104720A TW 93104720 A TW93104720 A TW 93104720A TW I262960 B TWI262960 B TW I262960B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon dioxide
- siloxane
- dioxide film
- forming silicon
- reactant
- Prior art date
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen-or NCO-substituted siloxane is used as a Si source. The method includes feeding a substitutes siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030012324 | 2003-02-27 | ||
KR1020040007104A KR100564609B1 (en) | 2003-02-27 | 2004-02-04 | Method for forming silicon dioxide film using siloxane compound |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200424346A TW200424346A (en) | 2004-11-16 |
TWI262960B true TWI262960B (en) | 2006-10-01 |
Family
ID=33134409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93104720A TWI262960B (en) | 2003-02-27 | 2004-02-25 | Method for forming silicon dioxide film using siloxane |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4494041B2 (en) |
TW (1) | TWI262960B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI550134B (en) * | 2016-04-22 | 2016-09-21 | 台灣美日先進光罩股份有限公司 | Method for plasma process and photomask plate |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100505668B1 (en) * | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | Method for forming silicon dioxide layer by atomic layer deposition |
JP4975414B2 (en) * | 2005-11-16 | 2012-07-11 | エーエスエム インターナショナル エヌ.ヴェー. | Method for film deposition by CVD or ALD |
WO2007083651A1 (en) * | 2006-01-17 | 2007-07-26 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device |
US7902074B2 (en) | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US7498273B2 (en) * | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
US7749574B2 (en) * | 2006-11-14 | 2010-07-06 | Applied Materials, Inc. | Low temperature ALD SiO2 |
JP5384852B2 (en) * | 2008-05-09 | 2014-01-08 | 株式会社日立国際電気 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
JP5329265B2 (en) * | 2009-03-09 | 2013-10-30 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
JP5385001B2 (en) * | 2009-05-08 | 2014-01-08 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
US8758512B2 (en) * | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
JP5792972B2 (en) * | 2011-03-22 | 2015-10-14 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
JP5602711B2 (en) * | 2011-05-18 | 2014-10-08 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
WO2013146632A1 (en) * | 2012-03-28 | 2013-10-03 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program |
JP6415808B2 (en) | 2012-12-13 | 2018-10-31 | 株式会社Kokusai Electric | Semiconductor device manufacturing method, substrate processing apparatus, and program |
JP6155063B2 (en) | 2013-03-19 | 2017-06-28 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
JP5864637B2 (en) | 2013-03-19 | 2016-02-17 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
JP2013179332A (en) * | 2013-04-26 | 2013-09-09 | Hitachi Kokusai Electric Inc | Semiconductor device manufacturing method and substrate processing apparatus |
JP5519059B2 (en) * | 2013-05-23 | 2014-06-11 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
JP5957128B2 (en) * | 2015-07-29 | 2016-07-27 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
US10283348B2 (en) * | 2016-01-20 | 2019-05-07 | Versum Materials Us, Llc | High temperature atomic layer deposition of silicon-containing films |
-
2004
- 2004-02-25 TW TW93104720A patent/TWI262960B/en not_active IP Right Cessation
- 2004-02-27 JP JP2004055191A patent/JP4494041B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI550134B (en) * | 2016-04-22 | 2016-09-21 | 台灣美日先進光罩股份有限公司 | Method for plasma process and photomask plate |
Also Published As
Publication number | Publication date |
---|---|
TW200424346A (en) | 2004-11-16 |
JP2004260192A (en) | 2004-09-16 |
JP4494041B2 (en) | 2010-06-30 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |