JP2010509171A5 - - Google Patents

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Publication number
JP2010509171A5
JP2010509171A5 JP2009536280A JP2009536280A JP2010509171A5 JP 2010509171 A5 JP2010509171 A5 JP 2010509171A5 JP 2009536280 A JP2009536280 A JP 2009536280A JP 2009536280 A JP2009536280 A JP 2009536280A JP 2010509171 A5 JP2010509171 A5 JP 2010509171A5
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JP
Japan
Prior art keywords
nanowire
reaction chamber
gas
dopant
growth
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JP2009536280A
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English (en)
Japanese (ja)
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JP2010509171A (ja
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Priority claimed from PCT/US2007/023434 external-priority patent/WO2008057558A2/en
Publication of JP2010509171A publication Critical patent/JP2010509171A/ja
Publication of JP2010509171A5 publication Critical patent/JP2010509171A5/ja
Pending legal-status Critical Current

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JP2009536280A 2006-11-07 2007-11-06 ナノワイヤー成長用システム及び方法 Pending JP2010509171A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85745006P 2006-11-07 2006-11-07
PCT/US2007/023434 WO2008057558A2 (en) 2006-11-07 2007-11-06 Systems and methods for nanowire growth

Publications (2)

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JP2010509171A JP2010509171A (ja) 2010-03-25
JP2010509171A5 true JP2010509171A5 (enExample) 2010-12-24

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JP2009536280A Pending JP2010509171A (ja) 2006-11-07 2007-11-06 ナノワイヤー成長用システム及び方法

Country Status (6)

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US (2) US7776760B2 (enExample)
EP (1) EP2082419A4 (enExample)
JP (1) JP2010509171A (enExample)
KR (1) KR20090087467A (enExample)
CN (1) CN101573778B (enExample)
WO (1) WO2008057558A2 (enExample)

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