JP4922337B2 - シリコンナノ構造体の製造方法 - Google Patents
シリコンナノ構造体の製造方法 Download PDFInfo
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- JP4922337B2 JP4922337B2 JP2009091139A JP2009091139A JP4922337B2 JP 4922337 B2 JP4922337 B2 JP 4922337B2 JP 2009091139 A JP2009091139 A JP 2009091139A JP 2009091139 A JP2009091139 A JP 2009091139A JP 4922337 B2 JP4922337 B2 JP 4922337B2
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- 229910052710 silicon Inorganic materials 0.000 title claims description 103
- 239000010703 silicon Substances 0.000 title claims description 103
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 100
- 239000002086 nanomaterial Substances 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000007789 gas Substances 0.000 claims description 35
- 230000012010 growth Effects 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 30
- 239000003054 catalyst Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 9
- 150000004756 silanes Chemical class 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- -1 silicon halogen compounds Chemical class 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 25
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 24
- 239000013078 crystal Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/903—Catalyst aided deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
- Y10S977/857—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
16、22 シリコンナノピラミッド
18、24 シリコンナノピラミッドの先端
20 樹枝状のシリコンナノ構造体
30 生長装置
302 ヒート炉
304 反応室
306 入気口
308 排気口
310 支持装置
314 生長基板
316 ガスの流れる方向
3140 生長基板の(100)結晶面
Claims (6)
- ヒート炉及び反応室を含む生長装置を提供する第一ステップと、
触媒材料及び生長基板を提供し、該触媒材料及び該生長基板を分離して、前記反応室に置く第二ステップと、
前記反応室に珪素ガス及び水素ガスを導入し、該反応室を500℃〜1100℃に加熱して、前記生長基板にシリコンナノ構造体を生長させる第三ステップと、
を含むことを特徴とするシリコンナノ構造体の製造方法。 - 前記第三ステップの加熱を止めた一定時間後に、前記反応室を500℃〜1100℃に再度加熱する第四ステップを含むことを特徴とする、請求項1に記載のシリコンナノ構造体の製造方法。
- 前記珪素ガス及び水素ガスの流量比率が10:1〜1:10であることを特徴とする請求項1又は2に記載のシリコンナノ構造体の製造方法。
- 前記反応室が入気口と排気口を含み、
前記生長基板を、前記反応室に置かれた触媒材料に正対する上方又は該触媒材料及び前記排気口の間に置くことを特徴とする、請求項1から3のいずれか一項に記載のシリコンナノ構造体の製造方法。 - 前記反応室に珪素ガス及び水素ガスを導入する前に、該反応室に保護ガスを導入することを特徴とする、請求項1から4のいずれか一項に記載のシリコンナノ構造体の製造方法。
- 前記珪素ガスがシリコンハロゲン化合物、シラン、シラン誘導体、ハロゲン化シランの一種又は幾種であることを特徴とする、請求項1から5のいずれか一項に記載のシリコンナノ構造体の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810066397.9A CN101550531B (zh) | 2008-04-03 | 2008-04-03 | 硅纳米结构的制备方法 |
CN200810066397.9 | 2008-04-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009249279A JP2009249279A (ja) | 2009-10-29 |
JP4922337B2 true JP4922337B2 (ja) | 2012-04-25 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009091139A Active JP4922337B2 (ja) | 2008-04-03 | 2009-04-03 | シリコンナノ構造体の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7888271B2 (ja) |
JP (1) | JP4922337B2 (ja) |
CN (1) | CN101550531B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101552721B1 (ko) * | 2008-10-07 | 2015-09-14 | 삼성전자주식회사 | 가지형 나노와이어 및 그의 제조방법 |
CN102344147B (zh) * | 2010-08-03 | 2013-10-23 | 同济大学 | 一种氧化硅纳米花的制备方法 |
TWI413177B (zh) * | 2010-08-23 | 2013-10-21 | Univ Nat Cheng Kung | 三維形狀微奈米結構之製造方法 |
US9409777B2 (en) | 2012-02-09 | 2016-08-09 | Basf Se | Preparation of polymeric resins and carbon materials |
US20140272592A1 (en) | 2013-03-14 | 2014-09-18 | Energ2 Technologies, Inc. | Composite carbon materials comprising lithium alloying electrochemical modifiers |
US9728777B2 (en) | 2013-07-26 | 2017-08-08 | Nanoteck Instruments, Inc. | Methods for mass-producing silicon nano powder and graphene-doped silicon nano powder |
US10195583B2 (en) | 2013-11-05 | 2019-02-05 | Group 14 Technologies, Inc. | Carbon-based compositions with highly efficient volumetric gas sorption |
EP3143051A1 (en) | 2014-03-14 | 2017-03-22 | Energ2 Technologies, Inc. | Novel methods for sol-gel polymerization in absence of solvent and creation of tunable carbon structure from same |
US20190097222A1 (en) | 2015-08-14 | 2019-03-28 | Energ2 Technologies, Inc. | Composites of porous nano-featured silicon materials and carbon materials |
CN108475779B (zh) | 2015-08-28 | 2021-03-23 | 14集团技术公司 | 具有极其持久的锂嵌入的新型材料及其制造方法 |
GB2559800B (en) * | 2017-02-20 | 2019-06-12 | Oxford Photovoltaics Ltd | Multijunction photovoltaic device |
CN110582823A (zh) | 2017-03-09 | 2019-12-17 | 14集团技术公司 | 含硅前体在多孔支架材料上的分解 |
US11174167B1 (en) | 2020-08-18 | 2021-11-16 | Group14 Technologies, Inc. | Silicon carbon composites comprising ultra low Z |
US11639292B2 (en) | 2020-08-18 | 2023-05-02 | Group14 Technologies, Inc. | Particulate composite materials |
US11335903B2 (en) | 2020-08-18 | 2022-05-17 | Group14 Technologies, Inc. | Highly efficient manufacturing of silicon-carbon composites materials comprising ultra low z |
KR20230082028A (ko) | 2020-09-30 | 2023-06-08 | 그룹14 테크놀로지스, 인코포레이티드 | 규소-탄소 복합재의 산소 함량 및 반응성을 제어하기 위한 부동태화의 방법 |
CN115215340A (zh) * | 2021-04-19 | 2022-10-21 | 四川物科金硅新材料科技有限责任公司 | 一种纳米硅线及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3768972A (en) * | 1971-05-10 | 1973-10-30 | Westinghouse Electric Corp | Method of producing cubic boron nitride with aluminum containing catalyst |
TW371796B (en) * | 1995-09-08 | 1999-10-11 | Semiconductor Energy Lab Co Ltd | Method and apparatus for manufacturing a semiconductor device |
US6528450B2 (en) * | 1996-08-29 | 2003-03-04 | Phillips Petroleum Company | Catalyst composition and processes therefor and therewith |
US6797323B1 (en) * | 1996-11-29 | 2004-09-28 | Sony Corporation | Method of forming silicon oxide layer |
JP2000223419A (ja) * | 1998-06-30 | 2000-08-11 | Sony Corp | 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置 |
TWI313059B (ja) * | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
CN1164488C (zh) * | 2001-07-25 | 2004-09-01 | 中山大学 | 一种纳米碳化硅材料的制备方法 |
CN100560811C (zh) * | 2004-08-28 | 2009-11-18 | 清华大学 | 硅纳米线结构及其生长方法 |
JP4547519B2 (ja) * | 2004-10-22 | 2010-09-22 | 独立行政法人物質・材料研究機構 | シリコンナノワイヤーの製造方法 |
JP5232991B2 (ja) * | 2004-11-29 | 2013-07-10 | 国立大学法人東京農工大学 | シリコンナノ線状体の製造方法およびシリコンナノ線状体 |
CN100463111C (zh) * | 2006-01-14 | 2009-02-18 | 清华大学 | 硅线的制备方法 |
JP2009161404A (ja) * | 2008-01-09 | 2009-07-23 | Sumitomo Chemical Co Ltd | シリコンナノワイヤーの製造方法 |
CN101549869B (zh) * | 2008-04-03 | 2011-06-22 | 清华大学 | 硅化铁纳米线的制备方法 |
-
2008
- 2008-04-03 CN CN200810066397.9A patent/CN101550531B/zh active Active
- 2008-11-06 US US12/291,301 patent/US7888271B2/en active Active
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2009
- 2009-04-03 JP JP2009091139A patent/JP4922337B2/ja active Active
Also Published As
Publication number | Publication date |
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CN101550531B (zh) | 2013-04-24 |
JP2009249279A (ja) | 2009-10-29 |
US20090253248A1 (en) | 2009-10-08 |
US7888271B2 (en) | 2011-02-15 |
CN101550531A (zh) | 2009-10-07 |
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