DE10328872A1 - Paraelektrisches Material für ein Halbleiterbauelement und Herstellungsverfahren desselben - Google Patents

Paraelektrisches Material für ein Halbleiterbauelement und Herstellungsverfahren desselben Download PDF

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Publication number
DE10328872A1
DE10328872A1 DE10328872A DE10328872A DE10328872A1 DE 10328872 A1 DE10328872 A1 DE 10328872A1 DE 10328872 A DE10328872 A DE 10328872A DE 10328872 A DE10328872 A DE 10328872A DE 10328872 A1 DE10328872 A1 DE 10328872A1
Authority
DE
Germany
Prior art keywords
layer
application
ferroelectric
seed layer
seed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10328872A
Other languages
German (de)
English (en)
Inventor
Stephen R. San Francisco Gilbert
Sanjeev Plano Aggarwal
Scott Garland Summerfelt
Stevan G. Sr. Fort Collins Hunter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Texas Instruments Inc
Original Assignee
Agilent Technologies Inc
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc, Texas Instruments Inc filed Critical Agilent Technologies Inc
Publication of DE10328872A1 publication Critical patent/DE10328872A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
DE10328872A 2002-08-05 2003-06-26 Paraelektrisches Material für ein Halbleiterbauelement und Herstellungsverfahren desselben Withdrawn DE10328872A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/212,895 US20040023416A1 (en) 2002-08-05 2002-08-05 Method for forming a paraelectric semiconductor device
US10/212895 2002-08-05

Publications (1)

Publication Number Publication Date
DE10328872A1 true DE10328872A1 (de) 2004-02-26

Family

ID=31187833

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10328872A Withdrawn DE10328872A1 (de) 2002-08-05 2003-06-26 Paraelektrisches Material für ein Halbleiterbauelement und Herstellungsverfahren desselben

Country Status (4)

Country Link
US (1) US20040023416A1 (enExample)
JP (1) JP2004111928A (enExample)
KR (1) KR20040014283A (enExample)
DE (1) DE10328872A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100660550B1 (ko) * 2005-09-15 2006-12-22 삼성전자주식회사 강유전체막 및 강유전체 커패시터 형성 방법
US8445913B2 (en) * 2007-10-30 2013-05-21 Spansion Llc Metal-insulator-metal (MIM) device and method of formation thereof
CN103250473B (zh) * 2010-12-06 2016-08-31 3M创新有限公司 复合材料二极管、电子器件及其制备方法
JP2014520404A (ja) * 2011-06-20 2014-08-21 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 高誘電率ペロブスカイト材料ならびにその作製および使用方法
US8962350B2 (en) * 2013-02-11 2015-02-24 Texas Instruments Incorporated Multi-step deposition of ferroelectric dielectric material
US11690228B2 (en) * 2021-02-25 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Annealed seed layer to improve ferroelectric properties of memory layer
FR3157226A1 (fr) * 2023-12-21 2025-06-27 Novatreat Dispositif de préparation d’un pré-mélange gazeux, unité de flammage et procédé utilisant ce dispositif

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド
KR0183868B1 (ko) * 1996-05-25 1999-04-15 김광호 강유전체막 및 그의 형성방법
US6255762B1 (en) * 1996-07-17 2001-07-03 Citizen Watch Co., Ltd. Ferroelectric element and process for producing the same
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US6190728B1 (en) * 1997-09-29 2001-02-20 Yazaki Corporation Process for forming thin films of functional ceramics
US6180420B1 (en) * 1997-12-10 2001-01-30 Advanced Technology Materials, Inc. Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
KR100275726B1 (ko) * 1997-12-31 2000-12-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
JP4772188B2 (ja) * 1998-11-30 2011-09-14 アイメック 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法
US6316797B1 (en) * 1999-02-19 2001-11-13 Advanced Technology Materials, Inc. Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
US6730354B2 (en) * 2001-08-08 2004-05-04 Agilent Technologies, Inc. Forming ferroelectric Pb(Zr,Ti)O3 films

Also Published As

Publication number Publication date
JP2004111928A (ja) 2004-04-08
US20040023416A1 (en) 2004-02-05
KR20040014283A (ko) 2004-02-14

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Legal Events

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OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: H01L 27105 20060101

8139 Disposal/non-payment of the annual fee