DE69513782T2 - Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und Herstellungsverfahren - Google Patents
Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und HerstellungsverfahrenInfo
- Publication number
- DE69513782T2 DE69513782T2 DE69513782T DE69513782T DE69513782T2 DE 69513782 T2 DE69513782 T2 DE 69513782T2 DE 69513782 T DE69513782 T DE 69513782T DE 69513782 T DE69513782 T DE 69513782T DE 69513782 T2 DE69513782 T2 DE 69513782T2
- Authority
- DE
- Germany
- Prior art keywords
- erbium
- barium
- thin film
- manufacturing process
- film made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052691 Erbium Inorganic materials 0.000 title 1
- 229910052788 barium Inorganic materials 0.000 title 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 title 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/315,725 US5635741A (en) | 1994-09-30 | 1994-09-30 | Barium strontium titanate (BST) thin films by erbium donor doping |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69513782D1 DE69513782D1 (de) | 2000-01-13 |
DE69513782T2 true DE69513782T2 (de) | 2000-06-29 |
Family
ID=23225775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69513782T Expired - Lifetime DE69513782T2 (de) | 1994-09-30 | 1995-09-25 | Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und Herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (2) | US5635741A (de) |
EP (1) | EP0709355B1 (de) |
JP (1) | JPH08198669A (de) |
KR (1) | KR960012511A (de) |
DE (1) | DE69513782T2 (de) |
TW (1) | TW376562B (de) |
Families Citing this family (80)
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JPH09331020A (ja) * | 1996-06-07 | 1997-12-22 | Sharp Corp | 誘電体薄膜キャパシタ素子及びその製造方法 |
US6136654A (en) * | 1996-06-07 | 2000-10-24 | Texas Instruments Incorporated | Method of forming thin silicon nitride or silicon oxynitride gate dielectrics |
KR100223939B1 (ko) * | 1996-09-07 | 1999-10-15 | 구본준 | 고유전막의 제조방법 및 그를 이용한 캐패시터의 제조방법 |
US6153519A (en) * | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
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US5834353A (en) * | 1997-10-20 | 1998-11-10 | Texas Instruments-Acer Incorporated | Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric |
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US6160524A (en) * | 1999-03-17 | 2000-12-12 | The United States Of America As Represented By The Secretary Of The Army | Apparatus and method for reducing the temperature sensitivity of ferroelectric microwave devices |
DE19926766A1 (de) * | 1999-06-11 | 2000-12-21 | Infineon Technologies Ag | Ferroelektrischer Transistor und Verfahren zu dessen Betrieb |
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KR100376987B1 (ko) * | 1999-12-28 | 2003-03-26 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
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JP2002170938A (ja) * | 2000-04-28 | 2002-06-14 | Sharp Corp | 半導体装置およびその製造方法 |
US6558517B2 (en) * | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
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US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
US6432546B1 (en) | 2000-07-24 | 2002-08-13 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
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US6493497B1 (en) | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
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US6583034B2 (en) | 2000-11-22 | 2003-06-24 | Motorola, Inc. | Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US6559471B2 (en) | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
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US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US7046719B2 (en) | 2001-03-08 | 2006-05-16 | Motorola, Inc. | Soft handoff between cellular systems employing different encoding rates |
KR20020079045A (ko) * | 2001-04-12 | 2002-10-19 | 김상섭 | 누설전류 억제 구조의 메모리 소자 |
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US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US20030017266A1 (en) * | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US6838122B2 (en) | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
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DE10246584B4 (de) * | 2002-10-05 | 2005-05-19 | Fachhochschule Kiel | Substrat mit darauf befindlichem keramischen Film und dessen Verwendung |
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US7795663B2 (en) * | 2005-06-21 | 2010-09-14 | E. I. Du Pont De Nemours And Company | Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof |
JP4956939B2 (ja) * | 2005-08-31 | 2012-06-20 | Tdk株式会社 | 誘電体膜及びその製造方法 |
US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
US8415227B2 (en) * | 2011-08-29 | 2013-04-09 | Intermolecular, Inc. | High performance dielectric stack for DRAM capacitor |
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US11329389B2 (en) * | 2018-07-26 | 2022-05-10 | Board Of Regents, The University Of Texas System | Method for fabricating a hyperbolic metamaterial having a near-zero refractive index in the optical regime |
JP7454687B2 (ja) * | 2020-01-29 | 2024-03-22 | サイカンタム・コーポレーション | デバイスおよび光スイッチ |
EP4115221A1 (de) | 2020-03-03 | 2023-01-11 | Psiquantum Corp. | Fabrikationsverfahren für photonische vorrichtungen |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4863883A (en) * | 1986-05-05 | 1989-09-05 | Cabot Corporation | Doped BaTiO3 based compositions |
JP2649342B2 (ja) * | 1986-12-04 | 1997-09-03 | 太陽誘電株式会社 | 電子部品用磁器の製造方法 |
US5453262A (en) * | 1988-12-09 | 1995-09-26 | Battelle Memorial Institute | Continuous process for production of ceramic powders with controlled morphology |
EP0430172B1 (de) * | 1989-11-30 | 1994-05-18 | Taiyo Yuden Co., Ltd. | Festdielektrikum-Kondensator und Verfahren zur Herstellung |
EP0476143B1 (de) * | 1990-03-28 | 1995-01-04 | TAIYO YUDEN Co., Ltd. | Keramischer Kondensator und seine Herstellung |
JPH0779004B2 (ja) * | 1990-10-31 | 1995-08-23 | 株式会社村田製作所 | 誘電体磁器組成物 |
US5232880A (en) * | 1991-01-11 | 1993-08-03 | Murata Manufacturing Co., Ltd. | Method for production of nonreducible dielectric ceramic composition |
JP2871135B2 (ja) * | 1991-02-16 | 1999-03-17 | 株式会社村田製作所 | 非還元性誘電体磁器組成物の製造方法 |
TW242191B (de) * | 1991-06-05 | 1995-03-01 | Taiyo Yuden Kk | |
JP2879865B2 (ja) * | 1992-01-16 | 1999-04-05 | 太陽誘電株式会社 | 誘電体磁器組成物の製造方法 |
US5401680A (en) * | 1992-02-18 | 1995-03-28 | National Semiconductor Corporation | Method for forming a ceramic oxide capacitor having barrier layers |
US5314651A (en) * | 1992-05-29 | 1994-05-24 | Texas Instruments Incorporated | Fine-grain pyroelectric detector material and method |
DE69327815T2 (de) * | 1992-05-29 | 2000-08-17 | Texas Instruments Inc | Donatoren-dotierte Perovskite für Dünnfilm-Dielektrika |
EP0581251A3 (de) * | 1992-07-31 | 1995-02-08 | Taiyo Yuden Kk | Keramische Werkstoffe mit hoher dielektrischer Konstante und daraus hergestellte Kondensatoren. |
JP3227859B2 (ja) * | 1993-01-08 | 2001-11-12 | 株式会社村田製作所 | 非還元性誘電体磁器組成物 |
US5471364A (en) * | 1993-03-31 | 1995-11-28 | Texas Instruments Incorporated | Electrode interface for high-dielectric-constant materials |
JPH0773732A (ja) * | 1993-06-23 | 1995-03-17 | Sharp Corp | 誘電体薄膜素子及びその製造方法 |
US5453908A (en) * | 1994-09-30 | 1995-09-26 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films by holmium donor doping |
-
1994
- 1994-09-30 US US08/315,725 patent/US5635741A/en not_active Expired - Lifetime
-
1995
- 1995-06-07 US US08/474,614 patent/US5731220A/en not_active Expired - Lifetime
- 1995-09-25 EP EP95115070A patent/EP0709355B1/de not_active Expired - Lifetime
- 1995-09-25 DE DE69513782T patent/DE69513782T2/de not_active Expired - Lifetime
- 1995-09-29 KR KR1019950032771A patent/KR960012511A/ko not_active Application Discontinuation
- 1995-10-02 JP JP7255400A patent/JPH08198669A/ja active Pending
-
1996
- 1996-01-10 TW TW085100211A patent/TW376562B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5731220A (en) | 1998-03-24 |
KR960012511A (ko) | 1996-04-20 |
JPH08198669A (ja) | 1996-08-06 |
EP0709355B1 (de) | 1999-12-08 |
US5635741A (en) | 1997-06-03 |
DE69513782D1 (de) | 2000-01-13 |
TW376562B (en) | 1999-12-11 |
EP0709355A1 (de) | 1996-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |