JP4956939B2 - 誘電体膜及びその製造方法 - Google Patents
誘電体膜及びその製造方法 Download PDFInfo
- Publication number
- JP4956939B2 JP4956939B2 JP2005252435A JP2005252435A JP4956939B2 JP 4956939 B2 JP4956939 B2 JP 4956939B2 JP 2005252435 A JP2005252435 A JP 2005252435A JP 2005252435 A JP2005252435 A JP 2005252435A JP 4956939 B2 JP4956939 B2 JP 4956939B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- firing step
- metal
- precursor layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
Description
W.Fan他、ジャーナル・オブ・アプライド・フィジクス(Journal of Applied Physics)、Vol.94、No.9、p.6192 Brian Laughlin他、2003 MRS Fall Meeting, Symposium C、2003年、p.70 Jon−Paul Maria他、ジャーナル・オブ・アメリカン・セラミックス・ソサイエティ(J. Am. Ceram. Soc.)、84巻、10号、p.2436 Jeff Dawley他、2003 MRS Fall Meeting, Symposium C、2003年、p.70 R.J.Ong、ジャーナル・オブ・マテリアル・リサーチ(J. Mater. Res.)、2003年、Vol.18、No.10、p.2310 Y.Fujisaki他、ジャパニーズ・ジャーナル・オブ・アプライド・フィジクス(Jpn. J Appl. Phys.)、2003年、Vol.42、p.L267 Y.Fujisaki他、ジャパニーズ・ジャーナル・オブ・アプライド・フィジクス(Jpn. J Appl. Phys.)、2002年、Vol.41、p.L1164
Ba、Sr及びTiを含む金属アルコキシドと、酢酸イソアミルと、アミルアルコールとを、質量比20:70:10の比率で混合し溶解させた前駆体溶液を、下部電極としての銅箔(Nilaco社製、100μm厚、圧延箔)上にスピンコート(3000rpm、15sec.)により塗布した。塗布後、大気中、ホットプレート上で150℃で10分間加熱することにより塗膜を乾燥して、銅箔上に前駆体層を形成させた。
Ba、Sr及びTiそれぞれの2−エチルヘキサン酸塩を金属酸化物の前駆体として含有する前駆体溶液を、下部電極としてのNi箔(Nilaco社製、100μm厚、圧延箔)上にスピンコート(3000rpm、20sec.)により塗布した。塗布後、大気中、ホットプレート上で150℃で10分間加熱することにより塗膜を乾燥して、前駆体層をニッケル箔上に形成させた。続いて、大気中、ホットプレート上で、前駆体層を400℃で10分間加熱した(仮焼成)。同様の塗布、乾燥及び仮焼成を、前駆体層が所定の厚さとなるように10回繰返した。その後、実施例1と同様の方法で0.05Paとなるように減圧された赤外線加熱炉内で800℃で30分間更に加熱して誘電体膜を形成させた(本焼成)。次いで、誘電体膜上にスパッタリングにより上部電極としてのPt電極を形成させた。作製した誘電体膜について、実施例1と同様にして誘電特性及びリーク電流を測定した。
本焼成において、減圧することなく、大気圧中、800℃にて、水素及び窒素の混合ガス(酸素分圧:1.013×10−14Pa)というNiが酸化しない雰囲気下で30分間加熱して誘電体膜を形成した他は実施例2と同様にして、誘電体膜を作製した。作製した誘電体膜について、実施例1と同様にして誘電特性及びリーク電流を測定した。
Claims (5)
- 金属層上に形成された前駆体層を加熱することにより誘電体膜を形成させる焼成工程を備え、
前記金属層が、Cu、Ni、Al、ステンレス鋼及びインコネル(登録商標)からなる群より選ばれる少なくとも1種の金属を含有し、
前記焼成工程の少なくとも一部において、圧力が200Pa以下となるように形成された減圧雰囲気下で前駆体層を加熱する、誘電体膜の製造方法。 - 前記焼成工程が、前駆体層を300〜500℃に加熱する仮焼成工程と、前記仮焼成工程後の前駆体層を400〜1200℃に加熱して前記誘電体膜を形成させる本焼成工程と、を含み、
前記仮焼成工程及び前記本焼成工程のうち少なくとも一方において、減圧雰囲気下で前駆体層を加熱する、請求項1に記載の誘電体膜の製造方法。 - 前記金属層がCuからなり、
前記焼成工程の少なくとも一部において、圧力が0.01Pa以上100Pa以下となるように形成された減圧雰囲気下で前駆体層を加熱する、請求項1に記載の誘電体膜の製造方法。 - 前記金属層がNiからなり、
前記焼成工程の少なくとも一部において、圧力が0.001Pa以上10Pa以下となるように形成された減圧雰囲気下で前駆体層を加熱する、請求項1に記載の誘電体膜の製造方法。 - 請求項1〜4の何れか一項に記載の誘電体膜の製造方法によって得られる誘電体膜。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005252435A JP4956939B2 (ja) | 2005-08-31 | 2005-08-31 | 誘電体膜及びその製造方法 |
US11/508,923 US7713877B2 (en) | 2005-08-31 | 2006-08-24 | Method for fabricating dielectric on metal by baking dielectric precursor under reduced pressure atmosphere |
TW095131665A TW200715319A (en) | 2005-08-31 | 2006-08-29 | Dielectric film and process for its fabrication |
EP06018021.3A EP1780305B1 (en) | 2005-08-31 | 2006-08-29 | Dielectric film and process for its fabrication |
KR1020060083407A KR100798288B1 (ko) | 2005-08-31 | 2006-08-31 | 유전체 막 및 이의 제조방법 |
CNB2006101264407A CN100466194C (zh) | 2005-08-31 | 2006-08-31 | 电介质膜及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005252435A JP4956939B2 (ja) | 2005-08-31 | 2005-08-31 | 誘電体膜及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007066754A JP2007066754A (ja) | 2007-03-15 |
JP4956939B2 true JP4956939B2 (ja) | 2012-06-20 |
Family
ID=37685196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005252435A Active JP4956939B2 (ja) | 2005-08-31 | 2005-08-31 | 誘電体膜及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7713877B2 (ja) |
EP (1) | EP1780305B1 (ja) |
JP (1) | JP4956939B2 (ja) |
KR (1) | KR100798288B1 (ja) |
CN (1) | CN100466194C (ja) |
TW (1) | TW200715319A (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090202738A1 (en) * | 2008-02-13 | 2009-08-13 | E. I. Du Pont De Nemours And Company | Process for making capacitors by direct heating of electrodes |
JP5218113B2 (ja) * | 2008-03-31 | 2013-06-26 | Tdk株式会社 | 誘電体素子の製造方法 |
JP2010218098A (ja) * | 2009-03-16 | 2010-09-30 | Ricoh Co Ltd | 情報処理装置、情報処理方法、制御プログラム及び記録媒体 |
JP5267265B2 (ja) * | 2009-03-25 | 2013-08-21 | Tdk株式会社 | 誘電体素子及び誘電体素子の製造方法 |
US8409963B2 (en) * | 2009-04-28 | 2013-04-02 | CDA Procesing Limited Liability Company | Methods of embedding thin-film capacitors into semiconductor packages using temporary carrier layers |
US8391017B2 (en) * | 2009-04-28 | 2013-03-05 | Georgia Tech Research Corporation | Thin-film capacitor structures embedded in semiconductor packages and methods of making |
US8088658B2 (en) | 2009-04-28 | 2012-01-03 | E. I. Du Pont De Nemours And Company | Thin film capacitor and method of fabrication thereof |
JP5866593B2 (ja) * | 2011-06-07 | 2016-02-17 | 株式会社ユーテック | 強誘電体膜、成膜方法及び強誘電体膜の製造方法 |
JP2014177359A (ja) * | 2013-03-13 | 2014-09-25 | Ricoh Co Ltd | 複合酸化物、薄膜容量素子、液滴吐出ヘッド、複合酸化物の製造方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4091418T1 (de) * | 1989-08-24 | 1997-07-31 | Murata Manufacturing Co | Mehrschichtkondensator und Verfahren zu seiner Herstellung |
JPH0528866A (ja) * | 1991-07-17 | 1993-02-05 | Nec Corp | 誘電体の成膜方法 |
JPH05112895A (ja) | 1991-08-23 | 1993-05-07 | Nippon Steel Corp | 金属基板と誘電体よりなる複合体及びその製造方法 |
JP3523280B2 (ja) * | 1991-12-28 | 2004-04-26 | Tdk株式会社 | 多層セラミック部品の製造方法 |
JPH06120020A (ja) * | 1992-10-02 | 1994-04-28 | Matsushita Electric Ind Co Ltd | 複合材料とその製造方法 |
US5635741A (en) * | 1994-09-30 | 1997-06-03 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films by erbium donor doping |
JP3188179B2 (ja) * | 1995-09-26 | 2001-07-16 | シャープ株式会社 | 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法 |
KR970059323A (ko) | 1996-01-30 | 1997-08-12 | 김광호 | 박막 증착 장치 및 이를 이용한 박막 증착 방법 |
US6169049B1 (en) * | 1997-04-28 | 2001-01-02 | John P. Witham | Solution coated hydrothermal BaTiO3 for low-temperature firing |
JPH11163273A (ja) * | 1997-12-01 | 1999-06-18 | Tokyo Ohka Kogyo Co Ltd | 誘電体薄膜、誘電体キャパシタの製造方法、および誘電体メモリ |
JP3225913B2 (ja) * | 1998-01-28 | 2001-11-05 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2000100802A (ja) * | 1998-09-17 | 2000-04-07 | Hitachi Ltd | 半導体装置の製造方法 |
US6207522B1 (en) * | 1998-11-23 | 2001-03-27 | Microcoating Technologies | Formation of thin film capacitors |
CA2289239C (en) | 1998-11-23 | 2010-07-20 | Micro Coating Technologies | Formation of thin film capacitors |
US6576546B2 (en) * | 1999-12-22 | 2003-06-10 | Texas Instruments Incorporated | Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications |
JP2002003702A (ja) * | 2000-06-21 | 2002-01-09 | Matsushita Electric Works Ltd | エポキシ樹脂組成物、絶縁フィルム、樹脂付き金属箔及び多層プリント配線板 |
US6541137B1 (en) * | 2000-07-31 | 2003-04-01 | Motorola, Inc. | Multi-layer conductor-dielectric oxide structure |
US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
US6960538B2 (en) * | 2002-08-21 | 2005-11-01 | Micron Technology, Inc. | Composite dielectric forming methods and composite dielectrics |
US6984592B2 (en) * | 2002-08-28 | 2006-01-10 | Micron Technology, Inc. | Systems and methods for forming metal-doped alumina |
US7101813B2 (en) * | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
US20040175585A1 (en) * | 2003-03-05 | 2004-09-09 | Qin Zou | Barium strontium titanate containing multilayer structures on metal foils |
JP4366456B2 (ja) | 2003-03-20 | 2009-11-18 | 国立大学法人山梨大学 | 誘電体材料およびその製造方法 |
US7029971B2 (en) | 2003-07-17 | 2006-04-18 | E. I. Du Pont De Nemours And Company | Thin film dielectrics for capacitors and methods of making thereof |
JP4523299B2 (ja) * | 2003-10-31 | 2010-08-11 | 学校法人早稲田大学 | 薄膜コンデンサの製造方法 |
JP2005159038A (ja) * | 2003-11-26 | 2005-06-16 | Kyocera Corp | 低温焼成セラミック基板の製造方法 |
JP5013035B2 (ja) | 2003-12-11 | 2012-08-29 | セイコーエプソン株式会社 | 誘電体膜の製造方法及び液体噴射ヘッドの製造方法 |
US7256980B2 (en) | 2003-12-30 | 2007-08-14 | Du Pont | Thin film capacitors on ceramic |
JP4654673B2 (ja) * | 2004-11-30 | 2011-03-23 | Tdk株式会社 | 印刷用誘電体ペーストの製造方法および積層セラミック部品の製造方法 |
US7539005B2 (en) * | 2005-07-29 | 2009-05-26 | Tdk Corporation | Dielectric film production process and capacitor |
US7393736B2 (en) * | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
-
2005
- 2005-08-31 JP JP2005252435A patent/JP4956939B2/ja active Active
-
2006
- 2006-08-24 US US11/508,923 patent/US7713877B2/en active Active
- 2006-08-29 TW TW095131665A patent/TW200715319A/zh unknown
- 2006-08-29 EP EP06018021.3A patent/EP1780305B1/en active Active
- 2006-08-31 KR KR1020060083407A patent/KR100798288B1/ko active IP Right Grant
- 2006-08-31 CN CNB2006101264407A patent/CN100466194C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP1780305A3 (en) | 2014-12-24 |
KR100798288B1 (ko) | 2008-01-28 |
US7713877B2 (en) | 2010-05-11 |
US20070049026A1 (en) | 2007-03-01 |
EP1780305B1 (en) | 2018-01-03 |
KR20070026186A (ko) | 2007-03-08 |
EP1780305A2 (en) | 2007-05-02 |
TW200715319A (en) | 2007-04-16 |
TWI333662B (ja) | 2010-11-21 |
JP2007066754A (ja) | 2007-03-15 |
CN100466194C (zh) | 2009-03-04 |
CN1925115A (zh) | 2007-03-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4956939B2 (ja) | 誘電体膜及びその製造方法 | |
US7581311B2 (en) | Method for manufacturing a dielectric element | |
KR100938073B1 (ko) | 커패시터용 동시소성 전극을 갖는 박막 유전체 및 그의제조 방법 | |
JPWO2007013604A1 (ja) | 薄膜コンデンサの製造方法 | |
US7539005B2 (en) | Dielectric film production process and capacitor | |
CN1790569B (zh) | 电介质薄膜、薄膜电介质元件及其制造方法 | |
JP5861278B2 (ja) | 薄膜キャパシタの製造方法及び該方法により得られた薄膜キャパシタ | |
JP4036707B2 (ja) | 誘電体素子および誘電体素子の製造方法 | |
JP4604939B2 (ja) | 誘電体薄膜、薄膜誘電体素子およびその製造方法 | |
JP4852744B2 (ja) | 誘電体膜キャパシタおよびその製造方法 | |
JP4488661B2 (ja) | 強誘電体キャパシタの製造方法 | |
JP4420232B2 (ja) | 薄膜コンデンサの製造方法 | |
JP2008053281A (ja) | 高誘電体膜とその形成方法 | |
JP4911659B2 (ja) | 誘電体薄膜キャパシタの製造方法 | |
JP4245552B2 (ja) | 複合酸化物の結晶性薄膜の製造方法 | |
JP4659772B2 (ja) | 半導体素子の製造方法 | |
JP2008227115A (ja) | 薄膜キャパシタ用の下部電極とその製造方法 | |
JP2005101531A (ja) | 誘電体薄膜キャパシタの製造方法 | |
JP2006128642A (ja) | 薄膜誘電体、薄膜誘電体素子及びその製造方法 | |
JP2004079691A (ja) | Blt強誘電体薄膜キャパシタ及びその作製方法 | |
JP2006128643A (ja) | 誘電体薄膜、薄膜誘電体素子及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080425 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120131 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120221 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120305 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150330 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4956939 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |