JP2004111928A - 半導体デバイスの常誘電性材料及びその製造方法 - Google Patents

半導体デバイスの常誘電性材料及びその製造方法 Download PDF

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Publication number
JP2004111928A
JP2004111928A JP2003286413A JP2003286413A JP2004111928A JP 2004111928 A JP2004111928 A JP 2004111928A JP 2003286413 A JP2003286413 A JP 2003286413A JP 2003286413 A JP2003286413 A JP 2003286413A JP 2004111928 A JP2004111928 A JP 2004111928A
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JP
Japan
Prior art keywords
seed layer
layer
depositing
ferroelectric
paraelectric
Prior art date
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Pending
Application number
JP2003286413A
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English (en)
Japanese (ja)
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JP2004111928A5 (enExample
Inventor
Stephen R Gilbert
ステファン・アール・ギルバート
Sanjeev Aggarwal
サンジェヴ・アガーワル
Scott Summerfelt
スコット・サマーフェルト
Stevan G Hunter Sr
ステーブン・ジー・ハンター，シニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Texas Instruments Inc
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Agilent Technologies Inc
Texas Instruments Inc
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Publication date
Application filed by Agilent Technologies Inc, Texas Instruments Inc filed Critical Agilent Technologies Inc
Publication of JP2004111928A publication Critical patent/JP2004111928A/ja
Publication of JP2004111928A5 publication Critical patent/JP2004111928A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2003286413A 2002-08-05 2003-08-05 半導体デバイスの常誘電性材料及びその製造方法 Pending JP2004111928A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/212,895 US20040023416A1 (en) 2002-08-05 2002-08-05 Method for forming a paraelectric semiconductor device

Publications (2)

Publication Number Publication Date
JP2004111928A true JP2004111928A (ja) 2004-04-08
JP2004111928A5 JP2004111928A5 (enExample) 2006-09-07

Family

ID=31187833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003286413A Pending JP2004111928A (ja) 2002-08-05 2003-08-05 半導体デバイスの常誘電性材料及びその製造方法

Country Status (4)

Country Link
US (1) US20040023416A1 (enExample)
JP (1) JP2004111928A (enExample)
KR (1) KR20040014283A (enExample)
DE (1) DE10328872A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014520404A (ja) * 2011-06-20 2014-08-21 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 高誘電率ペロブスカイト材料ならびにその作製および使用方法
JP2016515162A (ja) * 2013-02-11 2016-05-26 日本テキサス・インスツルメンツ株式会社 強誘電性誘電材料の多段階堆積

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100660550B1 (ko) * 2005-09-15 2006-12-22 삼성전자주식회사 강유전체막 및 강유전체 커패시터 형성 방법
US8445913B2 (en) * 2007-10-30 2013-05-21 Spansion Llc Metal-insulator-metal (MIM) device and method of formation thereof
CN103250473B (zh) * 2010-12-06 2016-08-31 3M创新有限公司 复合材料二极管、电子器件及其制备方法
US11690228B2 (en) * 2021-02-25 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Annealed seed layer to improve ferroelectric properties of memory layer
FR3157226A1 (fr) * 2023-12-21 2025-06-27 Novatreat Dispositif de préparation d’un pré-mélange gazeux, unité de flammage et procédé utilisant ce dispositif

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド
KR0183868B1 (ko) * 1996-05-25 1999-04-15 김광호 강유전체막 및 그의 형성방법
US6255762B1 (en) * 1996-07-17 2001-07-03 Citizen Watch Co., Ltd. Ferroelectric element and process for producing the same
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US6190728B1 (en) * 1997-09-29 2001-02-20 Yazaki Corporation Process for forming thin films of functional ceramics
US6180420B1 (en) * 1997-12-10 2001-01-30 Advanced Technology Materials, Inc. Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
KR100275726B1 (ko) * 1997-12-31 2000-12-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
JP4772188B2 (ja) * 1998-11-30 2011-09-14 アイメック 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法
US6316797B1 (en) * 1999-02-19 2001-11-13 Advanced Technology Materials, Inc. Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
US6730354B2 (en) * 2001-08-08 2004-05-04 Agilent Technologies, Inc. Forming ferroelectric Pb(Zr,Ti)O3 films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014520404A (ja) * 2011-06-20 2014-08-21 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 高誘電率ペロブスカイト材料ならびにその作製および使用方法
JP2016515162A (ja) * 2013-02-11 2016-05-26 日本テキサス・インスツルメンツ株式会社 強誘電性誘電材料の多段階堆積

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Publication number Publication date
US20040023416A1 (en) 2004-02-05
DE10328872A1 (de) 2004-02-26
KR20040014283A (ko) 2004-02-14

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