JP2000281494A5 - - Google Patents
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- Publication number
- JP2000281494A5 JP2000281494A5 JP1999084921A JP8492199A JP2000281494A5 JP 2000281494 A5 JP2000281494 A5 JP 2000281494A5 JP 1999084921 A JP1999084921 A JP 1999084921A JP 8492199 A JP8492199 A JP 8492199A JP 2000281494 A5 JP2000281494 A5 JP 2000281494A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- rare earth
- silicon substrate
- earth oxide
- growth temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 239000012528 membrane Substances 0.000 description 5
- 238000002109 crystal growth method Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 239000000539 dimer Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11084921A JP2000281494A (ja) | 1999-03-26 | 1999-03-26 | 酸化物の結晶成長方法および酸化物積層構造 |
| US10/127,155 US6749686B2 (en) | 1999-03-26 | 2002-04-19 | Crystal growth method of an oxide and multi-layered structure of oxides |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11084921A JP2000281494A (ja) | 1999-03-26 | 1999-03-26 | 酸化物の結晶成長方法および酸化物積層構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000281494A JP2000281494A (ja) | 2000-10-10 |
| JP2000281494A5 true JP2000281494A5 (enExample) | 2006-01-26 |
Family
ID=13844183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11084921A Pending JP2000281494A (ja) | 1999-03-26 | 1999-03-26 | 酸化物の結晶成長方法および酸化物積層構造 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6749686B2 (enExample) |
| JP (1) | JP2000281494A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| JP2003282439A (ja) * | 2002-03-27 | 2003-10-03 | Seiko Epson Corp | デバイス用基板およびデバイス用基板の製造方法 |
| KR100605504B1 (ko) * | 2003-07-30 | 2006-07-28 | 삼성전자주식회사 | 저전위밀도를 갖는 에피텍셜층을 포함하는 반도체 소자 및 상기 반도체 소자의 제조방법 |
| US7199451B2 (en) * | 2004-09-30 | 2007-04-03 | Intel Corporation | Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer film |
| US7344962B2 (en) * | 2005-06-21 | 2008-03-18 | International Business Machines Corporation | Method of manufacturing dual orientation wafers |
| JP4254823B2 (ja) | 2006-08-30 | 2009-04-15 | カシオ計算機株式会社 | 反応装置及び電子機器 |
| JP2008160086A (ja) * | 2006-11-30 | 2008-07-10 | Toshiba Corp | 半導体装置およびその製造方法 |
| WO2017165197A1 (en) * | 2016-03-23 | 2017-09-28 | IQE, plc | Epitaxial metal oxide as buffer for epitaxial iii-v layers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296458A (en) * | 1988-02-03 | 1994-03-22 | International Business Machines Corporation | Epitaxy of high Tc superconducting films on (001) silicon surface |
| JP3193302B2 (ja) * | 1996-06-26 | 2001-07-30 | ティーディーケイ株式会社 | 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法 |
| US6610548B1 (en) * | 1999-03-26 | 2003-08-26 | Sony Corporation | Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory |
-
1999
- 1999-03-26 JP JP11084921A patent/JP2000281494A/ja active Pending
-
2002
- 2002-04-19 US US10/127,155 patent/US6749686B2/en not_active Expired - Fee Related
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