JP2000281494A - 酸化物の結晶成長方法および酸化物積層構造 - Google Patents

酸化物の結晶成長方法および酸化物積層構造

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Publication number
JP2000281494A
JP2000281494A JP11084921A JP8492199A JP2000281494A JP 2000281494 A JP2000281494 A JP 2000281494A JP 11084921 A JP11084921 A JP 11084921A JP 8492199 A JP8492199 A JP 8492199A JP 2000281494 A JP2000281494 A JP 2000281494A
Authority
JP
Japan
Prior art keywords
oxide
rare earth
earth oxide
growing
growth temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11084921A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000281494A5 (enExample
Inventor
Takaaki Ami
隆明 網
Yuichi Ishida
祐一 石田
Naomi Nagasawa
直美 長沢
Masayuki Suzuki
真之 鈴木
Akio Machida
暁夫 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11084921A priority Critical patent/JP2000281494A/ja
Publication of JP2000281494A publication Critical patent/JP2000281494A/ja
Priority to US10/127,155 priority patent/US6749686B2/en
Publication of JP2000281494A5 publication Critical patent/JP2000281494A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP11084921A 1999-03-26 1999-03-26 酸化物の結晶成長方法および酸化物積層構造 Pending JP2000281494A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11084921A JP2000281494A (ja) 1999-03-26 1999-03-26 酸化物の結晶成長方法および酸化物積層構造
US10/127,155 US6749686B2 (en) 1999-03-26 2002-04-19 Crystal growth method of an oxide and multi-layered structure of oxides

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11084921A JP2000281494A (ja) 1999-03-26 1999-03-26 酸化物の結晶成長方法および酸化物積層構造

Publications (2)

Publication Number Publication Date
JP2000281494A true JP2000281494A (ja) 2000-10-10
JP2000281494A5 JP2000281494A5 (enExample) 2006-01-26

Family

ID=13844183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11084921A Pending JP2000281494A (ja) 1999-03-26 1999-03-26 酸化物の結晶成長方法および酸化物積層構造

Country Status (2)

Country Link
US (1) US6749686B2 (enExample)
JP (1) JP2000281494A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511909A (ja) * 2000-10-10 2004-04-15 エーエスエム　インターナショナル　エヌ．ヴェー． 誘電体界面被膜およびその方法
US7199451B2 (en) * 2004-09-30 2007-04-03 Intel Corporation Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer film
JP2008160086A (ja) * 2006-11-30 2008-07-10 Toshiba Corp 半導体装置およびその製造方法
US8097301B2 (en) 2006-08-30 2012-01-17 Casio Computer Co., Ltd. Electrical insulation film manufacturing method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282439A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp デバイス用基板およびデバイス用基板の製造方法
KR100605504B1 (ko) * 2003-07-30 2006-07-28 삼성전자주식회사 저전위밀도를 갖는 에피텍셜층을 포함하는 반도체 소자 및 상기 반도체 소자의 제조방법
US7344962B2 (en) * 2005-06-21 2008-03-18 International Business Machines Corporation Method of manufacturing dual orientation wafers
WO2017165197A1 (en) * 2016-03-23 2017-09-28 IQE, plc Epitaxial metal oxide as buffer for epitaxial iii-v layers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296458A (en) * 1988-02-03 1994-03-22 International Business Machines Corporation Epitaxy of high Tc superconducting films on (001) silicon surface
JP3193302B2 (ja) * 1996-06-26 2001-07-30 ティーディーケイ株式会社 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法
US6610548B1 (en) * 1999-03-26 2003-08-26 Sony Corporation Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511909A (ja) * 2000-10-10 2004-04-15 エーエスエム　インターナショナル　エヌ．ヴェー． 誘電体界面被膜およびその方法
US7199451B2 (en) * 2004-09-30 2007-04-03 Intel Corporation Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer film
US7910462B2 (en) 2004-09-30 2011-03-22 Intel Corporation Growing [110] silicon on [001] oriented substrate with rare-earth oxide buffer film
US8097301B2 (en) 2006-08-30 2012-01-17 Casio Computer Co., Ltd. Electrical insulation film manufacturing method
JP2008160086A (ja) * 2006-11-30 2008-07-10 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US6749686B2 (en) 2004-06-15
US20020119659A1 (en) 2002-08-29

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