JP2000058451A5 - - Google Patents

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Publication number
JP2000058451A5
JP2000058451A5 JP1998223279A JP22327998A JP2000058451A5 JP 2000058451 A5 JP2000058451 A5 JP 2000058451A5 JP 1998223279 A JP1998223279 A JP 1998223279A JP 22327998 A JP22327998 A JP 22327998A JP 2000058451 A5 JP2000058451 A5 JP 2000058451A5
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JP
Japan
Prior art keywords
crystal
buffer layer
boron phosphide
less
layer
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JP1998223279A
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English (en)
Japanese (ja)
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JP4238385B2 (ja
JP2000058451A (ja
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Priority to JP22327998A priority Critical patent/JP4238385B2/ja
Priority claimed from JP22327998A external-priority patent/JP4238385B2/ja
Publication of JP2000058451A publication Critical patent/JP2000058451A/ja
Publication of JP2000058451A5 publication Critical patent/JP2000058451A5/ja
Application granted granted Critical
Publication of JP4238385B2 publication Critical patent/JP4238385B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP22327998A 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法 Expired - Fee Related JP4238385B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22327998A JP4238385B2 (ja) 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22327998A JP4238385B2 (ja) 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2000058451A JP2000058451A (ja) 2000-02-25
JP2000058451A5 true JP2000058451A5 (enExample) 2005-08-04
JP4238385B2 JP4238385B2 (ja) 2009-03-18

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ID=16795646

Family Applications (1)

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JP22327998A Expired - Fee Related JP4238385B2 (ja) 1998-08-06 1998-08-06 化合物半導体素子およびその製造方法

Country Status (1)

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JP (1) JP4238385B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984851B2 (en) 2000-06-21 2006-01-10 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode
AU2001279163A1 (en) * 2000-08-04 2002-02-18 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
JP2002270896A (ja) * 2001-03-14 2002-09-20 Showa Denko Kk Iii族窒化物半導体発光素子およびその製造方法
KR100583243B1 (ko) 2001-05-28 2006-05-25 쇼와 덴코 가부시키가이샤 반도체 소자, 반도체층 및 그 제조방법
WO2003017387A1 (en) 2001-08-20 2003-02-27 Showa Denko K.K. Multicolor light-emitting lamp and light source
JP4876359B2 (ja) * 2001-09-10 2012-02-15 昭和電工株式会社 化合物半導体素子、その製造方法、発光素子およびトランジスタ
US6831293B2 (en) * 2002-03-19 2004-12-14 Showa Denko Kabushiki Kaisha P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source
AU2003288550A1 (en) * 2002-12-02 2004-06-23 Showa Denko K.K. Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
EP1593162A4 (en) * 2003-02-10 2009-01-28 Showa Denko Kk SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURE, AND LIGHT EMITTING DEVICE

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