DE69530859D1 - Verfahren zur herstellung einer mehrschicht-solarzelle - Google Patents
Verfahren zur herstellung einer mehrschicht-solarzelleInfo
- Publication number
- DE69530859D1 DE69530859D1 DE69530859T DE69530859T DE69530859D1 DE 69530859 D1 DE69530859 D1 DE 69530859D1 DE 69530859 T DE69530859 T DE 69530859T DE 69530859 T DE69530859 T DE 69530859T DE 69530859 D1 DE69530859 D1 DE 69530859D1
- Authority
- DE
- Germany
- Prior art keywords
- deposited
- pct
- layers
- date
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010899 nucleation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007790 solid phase Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000011282 treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPM982294 | 1994-12-02 | ||
AUPM9822A AUPM982294A0 (en) | 1994-12-02 | 1994-12-02 | Method of manufacturing a multilayer solar cell |
PCT/AU1995/000812 WO1996017388A1 (en) | 1994-12-02 | 1995-12-01 | Method of manufacturing a multilayer solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69530859D1 true DE69530859D1 (de) | 2003-06-26 |
DE69530859T2 DE69530859T2 (de) | 2004-02-26 |
Family
ID=3784332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69530859T Expired - Lifetime DE69530859T2 (de) | 1994-12-02 | 1995-12-01 | Verfahren zur herstellung einer mehrschicht-solarzelle |
Country Status (15)
Country | Link |
---|---|
US (1) | US5942050A (de) |
EP (1) | EP0795202B1 (de) |
JP (1) | JP3822238B2 (de) |
KR (2) | KR980700693A (de) |
CN (1) | CN1095205C (de) |
AT (1) | ATE241215T1 (de) |
AU (2) | AUPM982294A0 (de) |
BR (1) | BR9509944A (de) |
CA (1) | CA2205882C (de) |
DE (1) | DE69530859T2 (de) |
ES (1) | ES2200011T3 (de) |
MX (1) | MX9704064A (de) |
MY (2) | MY116383A (de) |
NZ (1) | NZ296486A (de) |
WO (1) | WO1996017388A1 (de) |
Families Citing this family (74)
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JPH1174536A (ja) * | 1997-01-09 | 1999-03-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US6155909A (en) | 1997-05-12 | 2000-12-05 | Silicon Genesis Corporation | Controlled cleavage system using pressurized fluid |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
JP3557148B2 (ja) * | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
US6879014B2 (en) * | 2000-03-20 | 2005-04-12 | Aegis Semiconductor, Inc. | Semitransparent optical detector including a polycrystalline layer and method of making |
AU2001247680A1 (en) * | 2000-03-27 | 2001-10-08 | Aegis Semiconductor | A semitransparent optical detector including a polycrystalline layer and method of making |
US6670599B2 (en) | 2000-03-27 | 2003-12-30 | Aegis Semiconductor, Inc. | Semitransparent optical detector on a flexible substrate and method of making |
US6875674B2 (en) * | 2000-07-10 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with fluorine concentration |
US6734453B2 (en) | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
JP2004537750A (ja) * | 2001-08-02 | 2004-12-16 | アイギス セミコンダクター インコーポレイテッド | 同調可能な光学機器 |
WO2004113887A2 (en) * | 2003-06-20 | 2004-12-29 | Aegis Semiconductor, Inc. | Thermo-optic filter and infrared sensor using said filter. |
US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
WO2005022900A2 (en) * | 2003-08-26 | 2005-03-10 | Redshift Systems Corporation | Infrared camera system |
US7221827B2 (en) * | 2003-09-08 | 2007-05-22 | Aegis Semiconductor, Inc. | Tunable dispersion compensator |
CN1864091A (zh) * | 2003-10-07 | 2006-11-15 | 伊吉斯半导体公司 | 在热膨胀率匹配的透明衬底上具有加热体的可调谐光学滤波器 |
US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
DE102004044709A1 (de) * | 2004-09-15 | 2006-03-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme |
DE102005061820B4 (de) * | 2005-12-23 | 2014-09-04 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer Solarzelle |
US20080057220A1 (en) * | 2006-01-31 | 2008-03-06 | Robert Bachrach | Silicon photovoltaic cell junction formed from thin film doping source |
US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
CN101473452B (zh) * | 2006-07-04 | 2013-05-08 | 京半导体股份有限公司 | 面板形半导体模块 |
KR101045753B1 (ko) * | 2006-07-07 | 2011-06-30 | 에너지 릴레이티드 디바이시스, 인코오포레이티드 | 패널형 반도체모듈 |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
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CN102280502B (zh) * | 2011-08-26 | 2013-04-17 | 上海师范大学 | 一种梯度掺杂硅基异质结太阳能电池及其制备方法 |
KR20180118803A (ko) | 2011-10-07 | 2018-10-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 |
FR3013506A1 (fr) * | 2013-11-15 | 2015-05-22 | St Microelectronics Crolles 2 | Formation d'une couche de silicium fortement dopee sur un substrat de silicium plus faiblement dope |
KR102629466B1 (ko) * | 2016-09-21 | 2024-01-26 | 에스케이하이닉스 주식회사 | 반도체 장치의 제조 방법 |
KR102692564B1 (ko) * | 2018-09-21 | 2024-08-06 | 삼성전자주식회사 | 다층 박막 구조물 및 이를 이용한 위상 변환 소자 |
CN113228282B (zh) * | 2021-03-29 | 2023-12-05 | 长江存储科技有限责任公司 | 用于增大半导体器件中的多晶硅晶粒尺寸的阶梯式退火工艺 |
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-
1994
- 1994-12-02 AU AUPM9822A patent/AUPM982294A0/en not_active Abandoned
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1995
- 1995-12-01 MY MYPI95003708A patent/MY116383A/en unknown
- 1995-12-01 CN CN95197426A patent/CN1095205C/zh not_active Expired - Fee Related
- 1995-12-01 WO PCT/AU1995/000812 patent/WO1996017388A1/en active IP Right Grant
- 1995-12-01 AU AU41113/96A patent/AU689992B2/en not_active Ceased
- 1995-12-01 BR BR9509944A patent/BR9509944A/pt not_active IP Right Cessation
- 1995-12-01 DE DE69530859T patent/DE69530859T2/de not_active Expired - Lifetime
- 1995-12-01 AT AT95939178T patent/ATE241215T1/de not_active IP Right Cessation
- 1995-12-01 JP JP51793696A patent/JP3822238B2/ja not_active Expired - Fee Related
- 1995-12-01 MX MX9704064A patent/MX9704064A/es not_active IP Right Cessation
- 1995-12-01 MY MYPI95003709A patent/MY113772A/en unknown
- 1995-12-01 NZ NZ296486A patent/NZ296486A/en unknown
- 1995-12-01 KR KR1019970703686A patent/KR980700693A/ko not_active IP Right Cessation
- 1995-12-01 EP EP95939178A patent/EP0795202B1/de not_active Expired - Lifetime
- 1995-12-01 ES ES95939178T patent/ES2200011T3/es not_active Expired - Lifetime
- 1995-12-01 US US08/849,584 patent/US5942050A/en not_active Expired - Lifetime
- 1995-12-01 KR KR1019970703686A patent/KR100392924B1/ko active
- 1995-12-01 CA CA002205882A patent/CA2205882C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
MY116383A (en) | 2004-01-31 |
CA2205882A1 (en) | 1996-06-06 |
ATE241215T1 (de) | 2003-06-15 |
BR9509944A (pt) | 1998-01-27 |
AU689992B2 (en) | 1998-04-09 |
EP0795202A1 (de) | 1997-09-17 |
MY113772A (en) | 2002-05-31 |
CN1173241A (zh) | 1998-02-11 |
EP0795202B1 (de) | 2003-05-21 |
AUPM982294A0 (en) | 1995-01-05 |
AU4111396A (en) | 1996-06-19 |
NZ296486A (en) | 1997-09-22 |
CN1095205C (zh) | 2002-11-27 |
JP3822238B2 (ja) | 2006-09-13 |
ES2200011T3 (es) | 2004-03-01 |
KR980700693A (ko) | 1998-03-30 |
MX9704064A (es) | 1997-08-30 |
DE69530859T2 (de) | 2004-02-26 |
KR100392924B1 (ko) | 2004-01-24 |
CA2205882C (en) | 2006-02-14 |
JPH10509843A (ja) | 1998-09-22 |
EP0795202A4 (de) | 1998-06-24 |
WO1996017388A1 (en) | 1996-06-06 |
US5942050A (en) | 1999-08-24 |
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